Manufacture of thin film transistor

Abstract

Abstract PURPOSE:To enable the manufacture of a thin film transistor having excellent characteristics even by a low-temperature process, by applying an oxygen plasma to a gate insulation film. CONSTITUTION:A polycrystalline silicon thin film 2 is evaporated on the upper surface of a glass substrate 1, an active layer element is formed by patterning, a silicon oxide film 3 to be a gate insulation film is deposited then, annealing is applied in the atmosphere of nitrogen, and an oxygen plasma is applied onto the whole surface. After a polycrystalline silicon film 4 and AlSi film 5 are deposited subsequently, a gate 12 is formed on the silicon oxide film 3 by photolithography. By this method, the characteristics of a thin film transistor are improved.

Inventors

• 👤 Yasushi Kubota
• 👤 靖 久保田
• 👤 Katsuji Iguchi
• 👤 勝次 井口
• 👤 Atsushi Kudo
• 👤 淳 工藤
• 👤 Masayoshi Koba
• 👤 木場　正義

Bibliographic Details