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US5838870A Expired / Lapsed US ⏱️ 0.0 years remaining

Nanometer-scale silicon-on-insulator photonic componets

Assignee: United States Department of the Air Force
•
Filing: 1997-02-28
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Granted: 1998-11-17
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Expires: 2017-02-28
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Abstract

Abstract Nanometer scale silicon-on-insulator (SOI) guided-wave optical components in the near infra-red employ an SOI platform for optical isolation, and single mode silicon strip etched into the buried oxide. A multi-layer core for the strip consistes of several 1-3 nanometer crystal silicon multiple quantum wells confined by wide bandgap epitaxial barriers. The MQW region of the strip employs intersubband or band-to-band photonic effects. Active strip microcavities use a photonic bandgap resonator of etched air cylinders, or two sets of etched slot Bragg grating reflectors. Many thousands of these components can be integrated on a Si chip.

Inventors

  • 👤 Richard A. Soref

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-08 03:52
CPC Classifications
G; G02; G02B; G02B6/00; G02B6/10; G02B6/12; G02B6/12004; G02B6/122; G02B2006/12035; G02B2006/12061; G02B2006/12083; G02B2006/12121; G02B2006/12128; G02B2006/12166; G02B2006/12195; G02B6/24; G02B6/26; G02B6/30; G02B6/305; G02B6/34; G02F; G02F1/00; G02F1/01; G02F1/015; G02F1/0151; G02F1/0152; H; H01; H01S; H01S5/00; H01S5/02; H01S5/026

Claims Analysis

Total Claims: 44
Claim 1
Independent Claim 98 words
A silicon-on-insulator single mode waveguide for transmitting optical waves in the near infra-red wavelength range comprising: (a) a silicon light transmissive strip having a lower surface portion, a cross sectional height H of less than about 300 nanometers and wherein said lower surface portion has a cross sectional width of less than 1-5 H; (b) a dielectric insulating layer having an upper surface portion underlying the lower surface portion of said light transmissive strip, and a lower surface portion; (c) a silicon substrate having an upper surface portion underlying the lower surface portion of said dielectric insulating layer.
Claim 2
Dependent Claim 98 words
A silicon-on-insulator single mode waveguide for transmitting optical waves in the near infra-red wavelength range comprising: (a) a silicon light transmissive strip having a lower surface portion, a cross sectional height H of less than about 300 nanometers and wherein said lower surface portion has a cross sectional width of less than 1-5 H; (b) a dielectric insulating layer having an upper surface portion underlying the lower surface portion of said light transmissive strip, and a lower surface portion; (c) a silicon substrate having an upper surface portion underlying the lower surface portion of said dielectric insulating layer.
Claim 3
Dependent Claim 30 words
The waveguide of claim 1 wherein the height and width of said silicon light transmissive strip both equal about 0.2 times the wavelength of light in free space transmitted therethrough.
Claim 4
Dependent Claim 30 words
The waveguide of claim 2 wherein said dielectric insulating layer is selected from the group consisting of SiO 2 , BeTeSe, gamma-Al 2 O 3 , and CaF 2 .
Claim 5
Dependent Claim 40 words
The waveguide of claim 3 wherein said dielectric insulating layer has a stairstep portion formed thereon and having the entire uppermost surface portion of said stairstep portion in contact with the lower surface portion of said silicon light transmissive strip.
Claim 6
Dependent Claim 25 words
The waveguide of claim 3 wherein said silicon light transmissive strip includes active multiple quantum wells with high barriers formed in a core portion thereof.
Claim 7
Dependent Claim 40 words
The waveguide of claim 2 wherein said dielectric insulating layer has a stairstep portion formed thereon and having the entire uppermost surface portion of said stairstep portion in contact with the lower surface portion of said silicon light transmissive strip.
Claim 8
Dependent Claim 25 words
The waveguide of claim 2 wherein said silicon light transmissive strip includes active multiple quantum wells with high barriers formed in a core portion thereof.
Claim 9
Dependent Claim 18 words
The waveguide of claim 2 wherein said silicon light transmissive strip includes a high Q microcavity formed therein.
Claim 10
Dependent Claim 30 words
The waveguide of claim 1 wherein said dielectric insulating layer is selected from the group consisting of SiO 2 , BeTeSe, gamma-Al 2 O 3 , and CaF 2 .
Claim 11
Dependent Claim 40 words
The waveguide of claim 9 wherein said dielectric insulating layer has a stairstep portion formed thereon and having the entire uppermost surface portion of said stairstep portion in contact with the lower surface portion of said silicon light transmissive strip.
Claim 12
Dependent Claim 25 words
The waveguide of claim 9 wherein said silicon light transmissive strip includes active multiple quantum wells with high barriers formed in a core portion thereof.
Claim 13
Dependent Claim 18 words
The waveguide of claim 9 wherein said silicon light transmissive strip includes a high Q microcavity formed therein.
Claim 14
Dependent Claim 40 words
The waveguide of claim 1 wherein said dielectric insulating layer has a stairstep portion formed thereon and having the entire uppermost surface portion of said stairstep portion in contact with the lower surface portion of said silicon light transmissive strip.
Claim 15
Dependent Claim 25 words
The waveguide of claim 13 wherein said silicon light transmissive strip includes active multiple quantum wells with high barriers formed in a core portion thereof.
Claim 16
Dependent Claim 18 words
The waveguide of claim 13 wherein said silicon light transmissive strip includes a high Q microcavity formed therein.
Claim 17
Dependent Claim 26 words
The waveguide of claim 1 wherein said silicon light transmissive strip includes active electro-optic multiple quantum wells with high barriers formed in a core portion thereof.
Claim 18
Dependent Claim 18 words
The waveguide of claim 1 wherein said silicon light transmissive strip includes a high Q microcavity formed therein.
Claim 19
Dependent Claim 18 words
The waveguide of claim 1 wherein said dielectric insulating layer has a thickness of 0.5 microns or more.
Claim 20
Dependent Claim 98 words
A silicon-on-insulator single mode waveguide for transmitting optical waves in the near infra-red wavelength range comprising: (a) a silicon light transmissive strip having a rectangular cross section, an upper and lower surface portion, a height H of less than 300 nanometers and a width of less than 1.5 H; (b) a dielectric insulating layer having an upper surface portion in contact with the lower surface portion of said light transmissive strip, and a lower surface portion; and (c) a silicon substrate having an upper surface portion in contact with the lower surface portion of said dielectric insulating layer.
Claim 21
Dependent Claim 98 words
A silicon-on-insulator single mode waveguide for transmitting optical waves in the near infra-red wavelength range comprising: (a) a silicon light transmissive strip having a rectangular cross section, an upper and lower surface portion, a height H of less than 300 nanometers and a width of less than 1.5 H; (b) a dielectric insulating layer having an upper surface portion in contact with the lower surface portion of said light transmissive strip, and a lower surface portion; and (c) a silicon substrate having an upper surface portion in contact with the lower surface portion of said dielectric insulating layer.
Claim 22
Dependent Claim 30 words
The waveguide of claim 19 wherein the height and width of said silicon light transmissive strip both equal about 0.2 times the wavelength of light in free space transmitted therethrough.
Claim 23
Dependent Claim 30 words
The waveguide of claim 20 wherein said dielectric insulating layer is selected from the group consisting of SiO 2 , BeTeSe, gamma-Al 2 O 3 , and CaF 2 .
Claim 24
Dependent Claim 40 words
The waveguide of claim 21 wherein said dielectric insulating layer has a stairstep portion formed thereon and having the entire uppermost surface portion of said stairstep portion in contact with the lower surface portion of said silicon light transmissive strip.
Claim 25
Dependent Claim 25 words
The waveguide of claim 21 wherein said silicon light transmissive strip includes active multiple quantum wells with high barriers formed in a core portion thereof.
Claim 26
Dependent Claim 18 words
The waveguide of claim 21 wherein said silicon light transmissive strip includes a high Q microcavity formed therein.
Claim 27
Dependent Claim 40 words
The waveguide of claim 20 wherein said dielectric insulating layer has a stairstep portion formed thereon and having the entire uppermost surface portion of said stairstep portion in contact with the lower surface portion of said silicon light transmissive strip.
Claim 28
Dependent Claim 18 words
The waveguide of claim 20 wherein said silicon light transmissive strip includes a high Q microcavity formed therein.
Claim 29
Dependent Claim 25 words
The waveguide of claim 20 wherein said silicon light transmissive strip includes active multiple quantum wells with high barriers formed in a core portion thereof.
Claim 30
Dependent Claim 30 words
The waveguide of claim 19 wherein said dielectric insulating layer is selected from the group consisting Of SiO 2 , BeTeSe, gamma-Al 2 O 3 , and CaF 2 .
Claim 31
Dependent Claim 40 words
The waveguide of claim 28 wherein said dielectric insulating layer has a stairstep portion formed thereon and having the entire uppermost surface portion of said stairstep portion in contact with the lower surface portion of said silicon light transmissive strip.
Claim 32
Dependent Claim 25 words
The waveguide of claim 28 wherein said silicon light transmissive strip includes active multiple quantum wells with high barriers formed in a core portion thereof.
Claim 33
Dependent Claim 18 words
The waveguide of claim 28 wherein said silicon light transmissive strip includes a high Q microcavity formed therein.
Claim 34
Dependent Claim 40 words
The waveguide of claim 19 wherein said dielectric insulating layer has a stairstep portion formed thereon and having the entire uppermost surface portion of said stairstep portion in contact with the lower surface portion of said silicon light transmissive strip.
Claim 35
Dependent Claim 25 words
The waveguide of claim 32 wherein said silicon light transmissive strip includes active multiple quantum wells with high barriers formed in a core portion thereof.
Claim 36
Dependent Claim 26 words
The waveguide of claim 19 wherein said silicon light transmissive strip includes active electro-optic multiple quantum wells with high barriers formed in a core portion thereof.
Claim 37
Dependent Claim 18 words
The waveguide of claim 19 wherein said silicon light transmissive strip includes a high Q microcavity formed therein.
Claim 38
Dependent Claim 18 words
The waveguide of claim 19 wherein said dielectric insulating layer has a thickness of 0.5 microns or more.
Claim 39
Dependent Claim 99 words
A silicon-on-insulator single mode waveguide for transmitting optical waves in the near infra-red wavelength range comprising: (a) a silicon light transmissive strip having a square cross section, the sides of said square cross section having a length of about 0.2 times the wavelength of light in free space transmitted therethrough; (b) a dielectric insulating layer having an upper surface portion in contact with a lower surface portion of said light transmissive strip, and a lower surface portion; and (c) a silicon substrate having an upper surface portion in contact with the lower surface portion of said dielectric insulating layer.
Claim 40
Dependent Claim 99 words
A silicon-on-insulator single mode waveguide for transmitting optical waves in the near infra-red wavelength range comprising: (a) a silicon light transmissive strip having a square cross section, the sides of said square cross section having a length of about 0.2 times the wavelength of light in free space transmitted therethrough; (b) a dielectric insulating layer having an upper surface portion in contact with a lower surface portion of said light transmissive strip, and a lower surface portion; and (c) a silicon substrate having an upper surface portion in contact with the lower surface portion of said dielectric insulating layer.
Claim 41
Dependent Claim 19 words
The waveguide of claim 37 wherein the sides of said square cross section are equal to about 250 nanometers.
Claim 42
Dependent Claim 18 words
The waveguide of claim 37 wherein said dielectric insulating layer has a thickness of 0.5 microns or more.
Claim 43
Dependent Claim 81 words
A silicon-on-insulator single mode waveguide for transmitting optical waves in the near infra-red wavelength range comprising: (a) a crystal silicon light transmissive strip having a lower surface portion, a cross sectional height H of less than about 300 nanometers and wherein said lower surface portion has a cross sectional width of less than 1.5 H; and (b) a dielectric insulating layer of single crystal bulk sapphire having an upper surface portion underlying the lower surface portion of said light transmissive strip.
Claim 44
Dependent Claim 81 words
A silicon-on-insulator single mode waveguide for transmitting optical waves in the near infra-red wavelength range comprising: (a) a crystal silicon light transmissive strip having a lower surface portion, a cross sectional height H of less than about 300 nanometers and wherein said lower surface portion has a cross sectional width of less than 1.5 H; and (b) a dielectric insulating layer of single crystal bulk sapphire having an upper surface portion underlying the lower surface portion of said light transmissive strip.

References Cited (Backward Citations)

US5514885A Cited
US4877299A Cited
US4996575A Cited
US5448513A Cited
US5559912A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2001-11-16 2002-05-18 2002-11-17 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2005-11-16 2006-05-18 2006-11-17 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2009-11-16 2010-05-18 2010-11-17 $7700.00 Window Closed / Lapsed

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