Patent US5837589A successfully refreshed from Google Patents.
US5837589A
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US
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Method for making heterojunction bipolar mixer circuitry
Assignee: Fairchild Semiconductor Corp
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Filing: 1996-12-27
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Granted: 1998-11-17
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Expires: 2016-12-27
Abstract
Abstract Mixer circuitry having a semiconductor body formed therein mixer circuitry having an oscillator having a heterojunction bipolar transistor and a mixer having a Schottky diode. The heterojunction transistor has a collector region formed in one portion of doped layer of the semiconductor body and the diode has a metal electrode is Schottky contact with another portion of such doped layer. The mixer is includes a diode and a DC biasing circuit, comprising a constant current, for biasing such diode to predetermined operating point substantially invariant with power of an input signal fed to such mixer.
Inventors
- 👤 Brian J. McNamara
- 👤 John P. Wendler
- 👤 Kamal Tabatabaie-Alavi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 23:05
CPC Classifications
H; H03; H03D; H03D7/00; H03D7/02; H10; H10D; H10D84/00; H10D84/01; H10D84/02; H10D84/05
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
197 words
A method for forming a transistor and a diode on a common, single crystal body, comprising the steps of: providing the single crystal body, such body comprising: a III-V substrate having a subcollector layer formed over the substrate, a collector layer over the subcollector layer, a base layer formed over the collector layer, and an emitter layer formed over the base layer; simultaneously forming a collector contact electrode in contact with a first portion of the body for the transistor and a cathode contact in a second, different portion of the body for the diode; removing a portion of the emitter layer from the second portion of the body to expose an underlying portion of the base layer; forming an opening in a portion of the exposed portion of the base layer in the second portion and exposing an underlying upper portion of the collector layer; forming an insulating layer over the body thus formed; forming an opening in the insulating layer to expose an underlying portion of the collector layer in the second portion; forming an anode in Schottky barrier contact with the exposed portion of the collector layer in the second portion of the body.
Claim 2
Independent Claim
197 words
A method for forming a transistor and a diode on a common, single crystal body, comprising the steps of: providing the single crystal body, such body comprising: a III-V substrate having a subcollector layer formed over the substrate, a collector layer over the subcollector layer, a base layer formed over the collector layer, and an emitter layer formed over the base layer; simultaneously forming a collector contact electrode in contact with a first portion of the body for the transistor and a cathode contact in a second, different portion of the body for the diode; removing a portion of the emitter layer from the second portion of the body to expose an underlying portion of the base layer; forming an opening in a portion of the exposed portion of the base layer in the second portion and exposing an underlying upper portion of the collector layer; forming an insulating layer over the body thus formed; forming an opening in the insulating layer to expose an underlying portion of the collector layer in the second portion; forming an anode in Schottky barrier contact with the exposed portion of the collector layer in the second portion of the body.
Claim 3
Dependent Claim
36 words
The method recited in claim 1 including the step of forming the subcollector layer with a doping level in a range from 2×10 16 atoms per cm 2 to 5×10 16 atoms per cm 2 .
Claim 4
Dependent Claim
20 words
The method recited in claim 2 including the step of forming the subcollector layer with a thickness of 0.5 micrometers.
Claim 5
Independent Claim
211 words
A method of forming a mixer circuitry having an oscillator and a mixer on a common, single crystal body, comprising the steps of: providing the single crystal body, such body comprising: a III-V substrate having a subcollector layer formed over the substrate, a collector layer formed over the subcollector layer, a base layer formed over the collector layer, and an emitter layer formed over the base layer; simultaneously forming a collector contact electrode in contact with a first portion of the body for a transistor of the oscillator and a cathode contact in a second, different portion of the body for a diode of the mixer; removing a portion of the emitter layer from the second portion of the body to expose an underlying portion of the base layer; forming an opening in a portion of the exposed portion of the base layer in the second portion and exposing an underlying upper portion of the collector layer; forming an insulating layer over the body thus formed; forming an opening in a portion of the insulating layer to expose an underlying portion of the collector layer in the second portion; forming an anode in Schottky barrier contact with the exposed portion of the collector layer in the second portion of the body.
Claim 6
Independent Claim
211 words
A method of forming a mixer circuitry having an oscillator and a mixer on a common, single crystal body, comprising the steps of: providing the single crystal body, such body comprising: a III-V substrate having a subcollector layer formed over the substrate, a collector layer formed over the subcollector layer, a base layer formed over the collector layer, and an emitter layer formed over the base layer; simultaneously forming a collector contact electrode in contact with a first portion of the body for a transistor of the oscillator and a cathode contact in a second, different portion of the body for a diode of the mixer; removing a portion of the emitter layer from the second portion of the body to expose an underlying portion of the base layer; forming an opening in a portion of the exposed portion of the base layer in the second portion and exposing an underlying upper portion of the collector layer; forming an insulating layer over the body thus formed; forming an opening in a portion of the insulating layer to expose an underlying portion of the collector layer in the second portion; forming an anode in Schottky barrier contact with the exposed portion of the collector layer in the second portion of the body.
Claim 7
Dependent Claim
36 words
The method recited in claim 4 including the step of forming the subcollector layer with a doping level in as range from 2×10 16 atoms per cm 2 to 5×10 16 atoms per cm 2 .
Claim 8
Dependent Claim
20 words
The method recited in claim 5 including the step of forming the subcollector layer with a thickness of 0.5 micrometers.
Claim 9
Independent Claim
225 words
A method of forming a mixer circuitry having an oscillator and a mixer on a common, single crystal body, comprising the steps of: providing the single crystal body, such body comprising: a semi-insulating gallium arsenide substrate having, an N+ type conductivity gallium arsenide subcollector layer formed over the substrate, an N type conductivity gallium arsenide collector layer formed over the subcollector, a P+ type conductivity type gallium arsenide base layer formed over the collector, and an N type conductivity InGaP or AlGaP emitter layer formed over the base layer; simultaneously forming a collector contact electrode in contact with the collector layer in a first portion of the body and a cathode contact in a second, different portion of the body; removing a portion of the emitter layer from the second portion of the body to expose an underlying portion of the base layer; forming an opening in a portion of the expose portion of the base layer in the second portion and exposing an underlying upper portion of the collector layer; forming an insulating layer over the body thus formed; forming an opening in a portion of the insulating layer to expose an underlying portion of the collector layer in the second portion; forming an anode in Schottky barrier contact with the exposed portion of the collector layer in the second portion of the body.
Claim 10
Independent Claim
225 words
A method of forming a mixer circuitry having an oscillator and a mixer on a common, single crystal body, comprising the steps of: providing the single crystal body, such body comprising: a semi-insulating gallium arsenide substrate having, an N+ type conductivity gallium arsenide subcollector layer formed over the substrate, an N type conductivity gallium arsenide collector layer formed over the subcollector, a P+ type conductivity type gallium arsenide base layer formed over the collector, and an N type conductivity InGaP or AlGaP emitter layer formed over the base layer; simultaneously forming a collector contact electrode in contact with the collector layer in a first portion of the body and a cathode contact in a second, different portion of the body; removing a portion of the emitter layer from the second portion of the body to expose an underlying portion of the base layer; forming an opening in a portion of the expose portion of the base layer in the second portion and exposing an underlying upper portion of the collector layer; forming an insulating layer over the body thus formed; forming an opening in a portion of the insulating layer to expose an underlying portion of the collector layer in the second portion; forming an anode in Schottky barrier contact with the exposed portion of the collector layer in the second portion of the body.
Claim 11
Dependent Claim
36 words
The method recited in claim 7 including the step of forming the subcollector layer with a doping level in a range from 2×10 16 atoms per cm 2 to 5×10 16 atoms per cm 2 .
Claim 12
Dependent Claim
20 words
The method recited in claim 8 including the step of forming the subcollector layer with a thickness of 0.5 micrometers.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-11-16 | 2002-05-18 | 2002-11-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-11-16 | 2006-05-18 | 2006-11-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-11-16 | 2010-05-18 | 2010-11-17 | $7700.00 | Window Closed / Lapsed |