Abstract This invention relates to methodology to resolve the problem of low drain/source breakdown voltage (BVdss) in small geometry devices with thin gate oxide. Improved drain diffusion profile implanting through disjoint NSD/NWELL windows in the extended drain region, This provides essentially an improved lightly diffused (LDD) structure. Further this invention relates to alternative methods to resolve the problem of low drain/source breakdown voltage in other structures which can be achieved by for example, building a number of side wall oxide layers, impurity compensation or oxygen implantation. The improved LDD structure to which this invention relates has a number of advantages when compared with other solutions. It enables high voltage transistors to be fabricated with high drive capability, without additional process steps being required to implement the structure. The inventions will find applications wherever a high voltage capability is required to interface with the outside world. Such designs would include automotive applications; programming transistors for Field Programmable Gate Arrays; Robust I/O's and ESD Protection Circuits.
A method of forming a semiconductor device comprising the steps of: forming a layer of a first conductivity type on a substrate; forming source, drain and gate regions in said layer, one of said source and drain regions being formed by forming a mask over said layer having a plurality of disjoint windows of varying widths therein, said width variation being in conformance with a desired dopant profile; diffusing a dopant through said window to form said source or drain, said diffusion forming disjoint strips of dopant in said layer which vary in accordance with said width; heating said device to allow said dopant to diffuse into said layer to form a graded profile having a thickness which decreases towards said gate region; and forming a metal layer over said gate region.
Claim 2
Independent Claim
132 words
A method of forming a semiconductor device comprising the steps of: forming a layer of a first conductivity type on a substrate; forming source, drain and gate regions in said layer, one of said source and drain regions being formed by forming a mask over said layer having a plurality of disjoint windows of varying widths therein, said width variation being in conformance with a desired dopant profile; diffusing a dopant through said window to form said source or drain, said diffusion forming disjoint strips of dopant in said layer which vary in accordance with said width; heating said device to allow said dopant to diffuse into said layer to form a graded profile having a thickness which decreases towards said gate region; and forming a metal layer over said gate region.
Claim 3
Dependent Claim
26 words
The method of claim 1 wherein the step of forming said source or drain region comprises forming the region by NWELL/NSD diffusion through said mask window.
Claim 4
Dependent Claim
17 words
The method of claim 2 wherein said source and drain regions are formed in a single step.
Claim 5
Dependent Claim
28 words
The method of claim 1 wherein oxygen atoms are diffused to form said disjoint strips followed by a blanket implant diffusion to form said source or drain region.
Claim 6
Dependent Claim
24 words
The method of claim 1, wherein the step of forming the source and drain regions comprises forming the regions by an impurity compensation method.