US5834339A
Expired / Lapsed
US
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Methods for providing void-free layers for semiconductor assemblies
Assignee: Adeia Semiconductor Solutions LLC
•
Filing: 1996-03-07
•
Granted: 1998-11-10
•
Expires: 2016-03-07
Abstract
Abstract A method for the removal of voids and gas bubbles within uncured or partially cured microelectronic component encapsulants and adhesive/chip attach layers. A sealed void or gas bubble within a gap between a microelectronic component and a supporting substrate is substantially eliminated through the application of a uniform pressure (isostatic or hydrostatic) and energy such that a substantially void/bubble free interposer layer is created.
Inventors
- 👤 Thomas H. DiStefano
- 👤 Joseph Fjelstad
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 07:29
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/01; H10W74/019; H10P; H10P72/00; H10P72/70; H10P72/74; H10W70/00; H10W70/40; H10W70/453; H10W74/014; H10W74/016; H10W74/10; H10W74/111; H10W74/129; H10W72/00; H10W72/01; H10W72/0198; H10W72/071; H10W72/072; H10W72/073; H10W72/07331; H10W72/20; H10W72/241; H10W72/261; H10W72/30; H10W72/381; H10W74/15; H10W80/00; H10W80/301; H10W80/331; H10W80/333; H10W80/334; H10W80/335; H10W90/00; H10W90/701; H10W90/721; H10W90/724; H10W90/731; H10W90/734; H10W90/791; H10W90/794; H10W99/00
Claims Analysis
Total Claims: 97
Claim 1
Independent Claim
107 words
A method of providing a void free underfill for a flip chip assembly, comprising the steps of: electrically connecting a plurality of contact pads on a surface of a semiconductor chip to corresponding bond pads on a circuitized substrate such that the connections create a gap between the chip and the substrate; sealing the gap between the chip and the substrate with a fluid, curable encapsulant so that there is a void therebetween; while maintaining said seal, applying uniform pressure to the assembly causing the encapsulant to flow into the gap and around the connections; and applying energy to the assembly in order to cure the encapsulant.
Claim 2
Independent Claim
107 words
A method of providing a void free underfill for a flip chip assembly, comprising the steps of: electrically connecting a plurality of contact pads on a surface of a semiconductor chip to corresponding bond pads on a circuitized substrate such that the connections create a gap between the chip and the substrate; sealing the gap between the chip and the substrate with a fluid, curable encapsulant so that there is a void therebetween; while maintaining said seal, applying uniform pressure to the assembly causing the encapsulant to flow into the gap and around the connections; and applying energy to the assembly in order to cure the encapsulant.
Claim 3
Dependent Claim
15 words
The method as claimed in claim 1, wherein the uniform pressure is isostatic gas pressure.
Claim 4
Dependent Claim
15 words
The method as claimed in claim 1, wherein the uniform pressure is hydrostatic fluid pressure.
Claim 5
Dependent Claim
26 words
The method as claimed in claim 1, further comprising the step of mechanically connecting the plurality of contact pads to the corresponding electrically connected bond pads.
Claim 6
Dependent Claim
17 words
The method as claimed in claim 1, wherein the connections are at least partially comprised of solder.
Claim 7
Dependent Claim
19 words
The method as claimed in claim 5, wherein the solder is comprised of an alloy of tin and lead.
Claim 8
Dependent Claim
28 words
The method as claimed in claim 1, wherein the step of applying pressure compresses a first gas sealed within the void thereby reducing the volume of the void.
Claim 9
Dependent Claim
41 words
The method as claimed in claim 7, wherein the step of applying pressure creates a higher pressure first gas in the void relative to an ambient gas outside of the encapsulant thereby causing the gas to diffuse out of the void.
Claim 10
Dependent Claim
33 words
The method as claimed in claim 7, wherein the rate of diffusion of the first gas into the encapsulant is greater than the rate of diffusion of the ambient gas into the encapsulant.
Claim 11
Dependent Claim
21 words
The method as claimed in claim 9, wherein the first gas and the ambient gas are comprised of the same gas.
Claim 12
Dependent Claim
31 words
The method as claimed in claim 9, further comprising the step of removing the first gas from around the assembly and replacing it with the ambient gas after the sealing step.
Claim 13
Dependent Claim
23 words
The method as claimed in claim 11, wherein the encapsulant is comprised of a material which retards the diffusion of the ambient gas.
Claim 14
Dependent Claim
26 words
The method as claimed in claim 11, wherein the first gas is selected from the group consisting of helium, hydrogen, water vapor, fluorinated hydrocarbons and methane.
Claim 15
Dependent Claim
24 words
The method as claimed in claim 13, wherein the second gas is selected from the group consisting of argon, air, nitrogen, and carbon dioxide.
Claim 16
Dependent Claim
23 words
The method as claimed in claim 1, further comprising the step of evacuating gas from around the assembly prior to the sealing step.
Claim 17
Dependent Claim
19 words
The method as claimed in claim 15, wherein the step of applying pressure reduces the volume of the void.
Claim 18
Dependent Claim
23 words
The method as claimed in claim 16, wherein the encapsulant is comprised of a material which retards the diffusion of the ambient gas.
Claim 19
Dependent Claim
21 words
The method as claimed in claim 1, wherein the applied pressure is between about 10 and 1002 pounds per square inch.
Claim 20
Dependent Claim
16 words
The method as claimed in claim 1, wherein the step of applying energy includes applying heat.
Claim 21
Dependent Claim
16 words
The method as claimed in claim 1, wherein the encapsulant is comprised of a thermoset resin.
Claim 22
Dependent Claim
16 words
The method as claimed in claim 20, wherein the encapsulant is comprised of an epoxy resin.
Claim 23
Dependent Claim
16 words
The method as claimed in claim 20, wherein the encapsulant is comprised of a thermoplastic resin.
Claim 24
Independent Claim
91 words
A method of injecting an encapsulant between a face surface of a semiconductor chip and a juxtaposed substrate, comprising the steps of: providing a gap between the face surface of the chip and the substrate; sealing each edge of the gap with a curable fluid encapsulant so that there is a void between the chip and the substrate; while maintaining said seal, applying uniform pressure to the assembly causing the encapsulant to flow between the chip and the substrate; and applying energy to the assembly in order to cure the encapsulant.
Claim 25
Independent Claim
91 words
A method of injecting an encapsulant between a face surface of a semiconductor chip and a juxtaposed substrate, comprising the steps of: providing a gap between the face surface of the chip and the substrate; sealing each edge of the gap with a curable fluid encapsulant so that there is a void between the chip and the substrate; while maintaining said seal, applying uniform pressure to the assembly causing the encapsulant to flow between the chip and the substrate; and applying energy to the assembly in order to cure the encapsulant.
Claim 26
Dependent Claim
15 words
The method as claimed in claim 23, wherein the uniform pressure is isostatic gas pressure.
Claim 27
Dependent Claim
15 words
The method as claimed in claim 23, wherein the uniform pressure is hydrostatic fluid pressure.
Claim 28
Dependent Claim
25 words
The method as claimed in claim 23, wherein the step of applying pressure forces the fluid encapsulant through channels and into cavities in the gap.
Claim 29
Dependent Claim
41 words
The method as claimed in claim 23, further comprising the step of electrically and mechanically connecting a plurality of contact pads on the face surface of the chip to corresponding bond pads on the substrate prior to the application of energy.
Claim 30
Dependent Claim
28 words
The method as claimed in claim 23, wherein the step of applying pressure compresses a first gas sealed in the void thereby reducing the volume of the void.
Claim 31
Dependent Claim
41 words
The method as claimed in claim 28, wherein the step of applying pressure creates a higher pressure first gas in the void relative to an ambient gas outside of the encapsulant thereby causing the first gas to exit from the void.
Claim 32
Dependent Claim
33 words
The method as claimed in claim 28, wherein the rate of diffusion of the first gas into the encapsulant is greater than the rate of diffusion of the ambient gas into the encapsulant.
Claim 33
Dependent Claim
21 words
The method as claimed in claim 30, wherein the first gas and the ambient gas are comprised of the same gas.
Claim 34
Dependent Claim
31 words
The method as claimed in claim 30, further comprising the step of removing the first gas from around the assembly and replacing it with the ambient gas after the sealing step.
Claim 35
Dependent Claim
23 words
The method as claimed in claim 32, wherein the encapsulant is comprised of a material which retards the diffusion of the ambient gas.
Claim 36
Dependent Claim
26 words
The method as claimed in claim 32, wherein the first gas is selected from the group consisting of helium, hydrogen, water vapor, fluorinated hydrocarbons and methane.
Claim 37
Dependent Claim
24 words
The method as claimed in claim 34, wherein the second gas is selected from the group consisting of argon, air, nitrogen, and carbon dioxide.
Claim 38
Dependent Claim
25 words
The method as claimed in claim 23, further comprising the step of evacuating gas from around the chip and substrate prior to the sealing step.
Claim 39
Dependent Claim
19 words
The method as claimed in claim 36, wherein the step of applying pressure reduces the volume of the void.
Claim 40
Dependent Claim
23 words
The method as claimed in claim 37, wherein the encapsulant is comprised of a material which retards the diffusion of the ambient gas.
Claim 41
Dependent Claim
21 words
The method as claimed in claim 23, wherein the applied pressure is between about 10 and 300 pounds per square inch.
Claim 42
Dependent Claim
16 words
The method as claimed in claim 23, wherein the step of applying energy includes applying heat.
Claim 43
Dependent Claim
17 words
The method as claimed in claim 23, wherein the encapsulant is comprised of a flowable thermoset resin.
Claim 44
Dependent Claim
26 words
The method as claimed in claim 41, wherein the uncured encapsulant is selected from the group consisting of silicone, flexiblized epoxy, urethane resin and thermoplastic resin.
Claim 45
Dependent Claim
23 words
The method as claimed in claim 23, wherein the step of providing a gap includes providing supports between the chip and the substrate.
Claim 46
Dependent Claim
12 words
The method as claimed in claim 23, wherein the substrate is flexible.
Claim 47
Dependent Claim
14 words
The method as claimed in claim 44, wherein the substrate is comprised of polyimide.
Claim 48
Independent Claim
81 words
A method of treating an interposer layer for a semiconductor package assembly to provide a void free interposer layer, comprising the steps of: disposing a sheet-like, compliant interposer layer between a face surface of a semiconductor chip and a first surface of a substrate such that any voids within or at the boundaries of the interposer are sealed within the assembly; while maintaining said seal, applying uniform pressure to the assembly wherein any voids in the interposer layer are substantially eliminated.
Claim 49
Independent Claim
81 words
A method of treating an interposer layer for a semiconductor package assembly to provide a void free interposer layer, comprising the steps of: disposing a sheet-like, compliant interposer layer between a face surface of a semiconductor chip and a first surface of a substrate such that any voids within or at the boundaries of the interposer are sealed within the assembly; while maintaining said seal, applying uniform pressure to the assembly wherein any voids in the interposer layer are substantially eliminated.
Claim 50
Dependent Claim
15 words
The method as claimed in claim 46, wherein the uniform pressure is isostatic gas pressure.
Claim 51
Dependent Claim
15 words
The method as claimed in claim 46, wherein the uniform pressure is hydrostatic fluid pressure.
Claim 52
Dependent Claim
27 words
The method as claimed in claim 46, wherein the interposer layer is comprised of a cured, sheet-like first layer and an at least partially uncured second layer.
Claim 53
Dependent Claim
55 words
The method as claimed in claim 49, wherein the disposing step includes the steps of providing an attached first layer on the first surface of the substrate, providing the second layer on top of the first layer, and positioning and attaching the first surface of the chip on an exposed surface of the second layer.
Claim 54
Dependent Claim
27 words
The method as claimed in claim 50, further comprising the step of applying energy to the assembly in order to at least partially cure the second layer.
Claim 55
Dependent Claim
20 words
The method as claimed in claim 51, wherein the step of applying energy occurs during the step of applying pressure.
Claim 56
Dependent Claim
14 words
The method as claimed in claim 52, wherein the energy is comprised of heat.
Claim 57
Dependent Claim
32 words
The method as claimed in claim 46, wherein the step of applying pressure compresses a first gas within at least one void in the interposer thereby reducing the volume of the void.
Claim 58
Dependent Claim
40 words
The method as claimed in claim 54, wherein the step of applying pressure creates a higher pressure first gas in the void relative to an ambient gas outside of the encapsulant thereby causing the gas to exit from the void.
Claim 59
Dependent Claim
36 words
The method as claimed in claim 50, wherein during the rate of diffusion of the first gas into the second layer is greater than the rate of diffusion of the ambient gas into the second layer.
Claim 60
Dependent Claim
19 words
The method as claimed in claim 56, wherein the first gas and the ambient gas are the same gas.
Claim 61
Dependent Claim
31 words
The method as claimed in claim 56, further comprising the step of removing the first gas from around the assembly and replacing it with the ambient gas after the sealing step.
Claim 62
Dependent Claim
24 words
The method as claimed in claim 58, wherein the second layer is comprised of a material which retards the diffusion of the ambient gas.
Claim 63
Dependent Claim
26 words
The method as claimed in claim 58, wherein the first gas is selected from the group consisting of helium, hydrogen, water vapor, fluorinated hydrocarbons and methane.
Claim 64
Dependent Claim
24 words
The method as claimed in claim 60, wherein the second gas is selected from the group consisting of argon, air, nitrogen, and carbon dioxide.
Claim 65
Dependent Claim
25 words
The method as claimed in claim 46, further comprising the step of evacuating gas from around the chip and substrate prior to the sealing step.
Claim 66
Dependent Claim
19 words
The method as claimed in claim 62, wherein the step of applying pressure reduces the volume of the void.
Claim 67
Dependent Claim
23 words
The method as claimed in claim 63, wherein the encapsulant is comprised of a material which retards the diffusion of the ambient gas.
Claim 68
Dependent Claim
21 words
The method as claimed in claim 46, wherein the applied pressure is between about 10 and 300 pounds per square inch.
Claim 69
Dependent Claim
35 words
The method as claimed in claim 46, wherein the first layer of the interposer layer is selected from the group consisting of silicone, flexiblized epoxy, urethane resin, polyimide foam, pressure sensitive adhesive and thermoplastic resin.
Claim 70
Dependent Claim
36 words
The method as claimed in claim 66, wherein the uncured second layer of the interposer layer is selected from the group consisting of silicone, flexiblized epoxy, urethane resin, polyimide foam, pressure sensitive adhesive and thermoplastic resin.
Claim 71
Dependent Claim
12 words
The method as claimed in claim 46, wherein the substrate is flexible.
Claim 72
Independent Claim
68 words
A method of creating a void-free interposer layer for a microelectronic component, comprising the steps of: injecting an interposer layer into a gap between a microelectronic component and a sheet-like substrate such that any voids within or at the boundaries of the interposer are sealed within the gap; while maintaining said seal, applying uniform pressure to the assembly wherein any voids in the interposer layer are substantially eliminated.
Claim 73
Independent Claim
68 words
A method of creating a void-free interposer layer for a microelectronic component, comprising the steps of: injecting an interposer layer into a gap between a microelectronic component and a sheet-like substrate such that any voids within or at the boundaries of the interposer are sealed within the gap; while maintaining said seal, applying uniform pressure to the assembly wherein any voids in the interposer layer are substantially eliminated.
Claim 74
Dependent Claim
15 words
The method as claimed in claim 69, wherein the uniform pressure is isostatic gas pressure.
Claim 75
Dependent Claim
15 words
The method as claimed in claim 69, wherein the uniform pressure is hydrostatic fluid pressure.
Claim 76
Dependent Claim
53 words
The method as claimed in claim 69, wherein the injecting step includes the steps of dispensing an encapsulant at the edges of the gap so that the encapsulant seals the gap, wherein the step of applying pressure causes the encapsulant to flow into the gap and form a substantially void free interposer layer.
Claim 77
Dependent Claim
30 words
The method as claimed in claim 72, further comprising the step of applying energy to the encapsulant after the voids have been substantially removed in order to cure the encapsulant.
Claim 78
Dependent Claim
20 words
The method as claimed in claim 73, wherein the step of applying energy occurs during the step of applying pressure.
Claim 79
Dependent Claim
14 words
The method as claimed in claim 74, wherein the energy is comprised of heat.
Claim 80
Dependent Claim
30 words
The method as claimed in claim 69, wherein the step of applying pressure compresses a first gas within a void in the interposer thereby reducing the volume of the void.
Claim 81
Dependent Claim
40 words
The method as claimed in claim 76, wherein the step of applying pressure creates a higher pressure first gas in the void relative to an ambient gas outside of the encapsulant thereby causing the gas to exit from the void.
Claim 82
Dependent Claim
34 words
The method as claimed in claim 77, wherein during the rate of diffusion of the first gas into the encapsulant is greater than the rate of diffusion of the ambient gas into the encapsulant.
Claim 83
Dependent Claim
19 words
The method as claimed in claim 78, wherein the first gas and the ambient gas are the same gas.
Claim 84
Dependent Claim
31 words
The method as claimed in claim 78, further comprising the step of removing the first gas from around the assembly and replacing it with the ambient gas after the sealing step.
Claim 85
Dependent Claim
23 words
The method as claimed in claim 80, wherein the encapsulant is comprised of a material which retards the diffusion of the ambient gas.
Claim 86
Dependent Claim
26 words
The method as claimed in claim 80, wherein the first gas is selected from the group consisting of helium, hydrogen, water vapor, fluorinated hydrocarbons and methane.
Claim 87
Dependent Claim
24 words
The method as claimed in claim 82, wherein the second gas is selected from the group consisting of argon, air, nitrogen, and carbon dioxide.
Claim 88
Dependent Claim
26 words
The method as claimed in claim 69, further comprising the step of evacuating gas from around the microelectronic device and substrate prior to the injecting step.
Claim 89
Dependent Claim
19 words
The method as claimed in claim 84, wherein the step of applying pressure reduces the volume of the void.
Claim 90
Dependent Claim
23 words
The method as claimed in claim 85, wherein the encapsulant is comprised of a material which retards the diffusion of the ambient gas.
Claim 91
Dependent Claim
21 words
The method as claimed in claim 69, wherein the applied pressure is between about 10 and 300 pounds per square inch.
Claim 92
Dependent Claim
27 words
The method as claimed in claim 87, wherein the encapsulant is selected from the group consisting of silicone, flexiblized epoxy, urethane resin, polyimide foam and thermoplastic resin.
Claim 93
Dependent Claim
12 words
The method as claimed in claim 69, wherein the substrate is flexible.
Claim 94
Dependent Claim
14 words
The method as claimed in claim 69, wherein the substrate is comprised of polyimide.
Claim 95
Dependent Claim
17 words
The method as claimed in claim 69, wherein the microelectronic device is comprised of a semiconductor chip.
Claim 96
Dependent Claim
17 words
The method as claimed in claim 69, wherein the microelectronic device is comprised of a heat spreader.
Claim 97
Dependent Claim
21 words
The method as claimed in claim 69, wherein the microelectronic device is comprised of a support ring encircling a semiconductor chip.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-11-09 | 2002-05-11 | 2002-11-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-11-09 | 2006-05-11 | 2006-11-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-11-09 | 2010-05-11 | 2010-11-10 | $7700.00 | Window Closed / Lapsed |