US5828129A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor memory device including a capacitor having a top portion which is a diffusion barrier
Assignee: SK Hynix Inc
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Filing: 1997-01-23
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Granted: 1998-10-27
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Expires: 2017-01-23
Abstract
Abstract A semiconductor memory device suitable for forming a capacitor using a high dielectric film for a highly integrated semiconductor device includes a semiconductor substrate, an insulating film having a contact hole, the insulating film being over the semiconductor substrate, a conductive film on the semiconductor substrate through the contact hole, the conductive film having a top portion acting as a diffusion barrier, a first electrode over the conductive films, a dielectric film over the first electrode, and a second electrode over the dielectric film.
Inventors
- 👤 Jae Sung Roh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:48
CPC Classifications
H; H10; H10B; H10B12/00; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/046; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10W20/033; H10W20/037; H10W20/047; H10W20/049; H10W20/055
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
107 words
A semiconductor memory device comprising: a semiconductor substrate; an insulating film over the semiconductor substrate and having a contact hole; a conductive film on the semiconductor substrate through the contact hole, the conductive film having an upper portion acting as a diffusion barrier, the diffusion barrier having a portion within the contact hole and a portion extending out from the contact hole and having a width the same as the contact hole, the conductive film including a first conductive material and a second conductive material; a first electrode over the conductive film; a dielectric film over the first electrode; and a second electrode over the dielectric film.
Claim 2
Dependent Claim
107 words
A semiconductor memory device comprising: a semiconductor substrate; an insulating film over the semiconductor substrate and having a contact hole; a conductive film on the semiconductor substrate through the contact hole, the conductive film having an upper portion acting as a diffusion barrier, the diffusion barrier having a portion within the contact hole and a portion extending out from the contact hole and having a width the same as the contact hole, the conductive film including a first conductive material and a second conductive material; a first electrode over the conductive film; a dielectric film over the first electrode; and a second electrode over the dielectric film.
Claim 3
Dependent Claim
22 words
The semiconductor memory device according to claim 1, wherein the first conductive material is on the semiconductor substrate within the contact hole.
Claim 4
Dependent Claim
19 words
The semiconductor memory device according to claim 1, wherein the second conductive material is on the first conductive material.
Claim 5
Dependent Claim
15 words
The semiconductor memory device according to claim 1, wherein the diffusion barrier includes titanium tungsten.
Claim 6
Dependent Claim
111 words
A semiconductor memory device comprising: a semiconductor substrate; an insulating film having a contact hole, the insulating film being on the semiconductor substrate; a first conductive film including a polysilicon layer on the semiconductor substrate through the contact hole; a second conductive film on the first conductive film through the contact hole; a diffusion barrier on the second conductive film, the diffusion barrier having a portion within the contact hole and a portion extending out from the contact hole and having a width the same as the contact hole; a first electrode on the diffusion barrier; a dielectric film on the first electrode; and a second electrode on the dielectric film.
Claim 7
Dependent Claim
111 words
A semiconductor memory device comprising: a semiconductor substrate; an insulating film having a contact hole, the insulating film being on the semiconductor substrate; a first conductive film including a polysilicon layer on the semiconductor substrate through the contact hole; a second conductive film on the first conductive film through the contact hole; a diffusion barrier on the second conductive film, the diffusion barrier having a portion within the contact hole and a portion extending out from the contact hole and having a width the same as the contact hole; a first electrode on the diffusion barrier; a dielectric film on the first electrode; and a second electrode on the dielectric film.
Claim 8
Dependent Claim
17 words
The semiconductor memory device according to claim 5, wherein the second conductive film includes a tungsten layer.
Claim 9
Dependent Claim
15 words
The semiconductor memory device according to claim 5, wherein the diffusion barrier includes titanium tungsten.
Claim 10
Dependent Claim
16 words
The semiconductor memory device according to claim 5, wherein the first electrode includes a platinum layer.
Claim 11
Dependent Claim
27 words
The semiconductor memory device according to claim 5, wherein the dielectric film includes at least one of PZT, PLTZ, BST, BaTiO 3 , and SrTiO 3 .
Claim 12
Dependent Claim
21 words
The semiconductor memory device according to claim 1, wherein the diffusion layer has a width the same as the contact hole.
Claim 13
Dependent Claim
21 words
The semiconductor memory device according to claim 7, wherein the diffusion layer has a width the same as the contact hole.
Claim 14
Dependent Claim
110 words
A semiconductor memory device comprising: a semiconductor substrate; an insulating film having a contact hole, the insulating film being on the semiconductor substrate; a polysilicon layer on the semiconductor substrate through the contact hole; a tungsten layer on the polysilicon layer; a titanium tungsten layer on the tungsten layer, the titanium tungsten layer partly extending out of the contact hole, the titanium tungsten layer having a width the same as the contact hole; a platinum layer on the titanium tungsten layer and a portion of the insulating layer; a dielectric layer on the platinum layer and a portion of the insulating layer; and a second electrode on the dielectric layer.
Claim 15
Dependent Claim
110 words
A semiconductor memory device comprising: a semiconductor substrate; an insulating film having a contact hole, the insulating film being on the semiconductor substrate; a polysilicon layer on the semiconductor substrate through the contact hole; a tungsten layer on the polysilicon layer; a titanium tungsten layer on the tungsten layer, the titanium tungsten layer partly extending out of the contact hole, the titanium tungsten layer having a width the same as the contact hole; a platinum layer on the titanium tungsten layer and a portion of the insulating layer; a dielectric layer on the platinum layer and a portion of the insulating layer; and a second electrode on the dielectric layer.
Claim 16
Dependent Claim
27 words
The semiconductor memory device according to claim 12, wherein the dielectric layer includes at least one of PZT, PLZT, BST, BaTiO 3 , and SrTiO 3 .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-10-26 | 2002-04-27 | 2002-10-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-10-26 | 2006-04-27 | 2006-10-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-10-26 | 2010-04-27 | 2010-10-27 | $7700.00 | Window Closed / Lapsed |