Abstract A semiconductor light emitting device ccomprises a first cladding layer, an active layer and a second cladding layer which are stacked on a semiconductor substrate. At least a part of the first cladding layer and the second cladding layer has a superlattice structure comprising II-VI compound semiconductor. Another semiconductor light emitting device comprises a first cladding layer, a first guide layer, an active layer, a second guide layer and a second cladding layer which are stacked on a semiconductor substrate. At least a part of the first cladding layer, the first guide layer, the second cladding layer and the second guide layer has a superlattice structure. Still anothr semiconductor light emitting device comprises a defect decomposing layer, a defect blocking layer, a first cladding layer, an active layer, a second cladding layer which are stacked on a semiconductor substrate. The defect decomposing layer and the defect blocking layer comprise a superlattice structure.
A semiconductor light emitting device comprising: a first cladding layer having one of n-type and p-type conductivity, an active layer, and a second cladding layer having another one of n-type and p-type conductivity on a semiconductor substrate, said cladding layer having the p-type conductivity comprising a II-VI semiconductor superlattice structure, said structure being composed of a plurality of Mg including layers and a plurality of Mg excluding layers.
Claim 2
Dependent Claim
68 words
A semiconductor light emitting device comprising: a first cladding layer having one of n-type and p-type conductivity, an active layer, and a second cladding layer having another one of n-type and p-type conductivity on a semiconductor substrate, said cladding layer having the p-type conductivity comprising a II-VI semiconductor superlattice structure, said structure being composed of a plurality of Mg including layers and a plurality of Mg excluding layers.
Claim 3
Dependent Claim
24 words
A semiconductor light emitting device according to claim 1, wherein within said superlattice structure, p-type dopant beng doped only in said Mg excluding layers.
Claim 4
Dependent Claim
25 words
A semiconductor light emitting device according to claim 1 wherein said superlattice has well layers and barrier layers which are substantially lattice-matched with said substrate.
Claim 5
Dependent Claim
16 words
A semiconductor light emitting device according to claim 3 wherein said superlattice comprises ZnSe and ZnMgSSe.
Claim 6
Dependent Claim
16 words
A semiconductor light emitting device according to claim 3 wherein said superlattice comprises ZnSe and MgS.
Claim 7
Dependent Claim
26 words
A semiconductor light emitting device according to claim 3 wherein said well layers and said barrier layers of said superlattice have a thickness of several atoms.