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US5824570A Expired / Lapsed US ⏱️ 0.0 years remaining

Method for designing a semiconductor integrated circuit

Assignee: Toshiba Corp
•
Filing: 1996-03-15
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Granted: 1998-10-20
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Expires: 2016-03-15
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Abstract

Abstract A semiconductor integrated circuit capabling of reducing a chip area by facilitating optimization of a chip layout and a method for designing the same has been provided. For given gate level connection description, use cell information designating gates which should be designed by employing the cell patterns prepared in advance is generated. When the gate level connection description is developed into the transistor level, hybrid connection description including mixedly transistor level and gate level is then generated by employing the cell patterns relative to the gates which being designated by the use cell information and by developing gates which being not designated by the use cell information into transistor level. A layout is then designed based on the hybrid connection description including mixedly the transistor level and the gate level.

Inventors

  • 👤 Sachiko Aoki
  • 👤 Chiharu Mizuno

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-07 23:45
CPC Classifications
H; H10; H10D; H10D89/00; H10D89/10; G; G06; G06F; G06F30/00; G06F30/30; G06F30/39

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 77 words
A method for designing a semiconductor integrated circuit comprising the steps of: generating a gate level connection description describing a plurality of gates; replacing at least one of said plurality of gates with cells from a cell library, wherein said cell library is prepared in advance; replacing others of said plurality of gates with transistor level connections; and designing a layout to be used in said semiconductor integrated circuit comprising said cells and said transistor level connections.
Claim 2
Independent Claim 77 words
A method for designing a semiconductor integrated circuit comprising the steps of: generating a gate level connection description describing a plurality of gates; replacing at least one of said plurality of gates with cells from a cell library, wherein said cell library is prepared in advance; replacing others of said plurality of gates with transistor level connections; and designing a layout to be used in said semiconductor integrated circuit comprising said cells and said transistor level connections.
Claim 3
Dependent Claim 36 words
The method for designing a semiconductor integrated circuit as claimed in claim 1, wherein information for designating which of said ones of said plurality of gates to be replaced by said cells, is prepared in advance.
Claim 4
Dependent Claim 39 words
The method for designing a semiconductor integrated circuit as claimed in claim 1, wherein said transistor level connections comprise transistors arranged to form N-channel and P-channel transistors, said N-channel and P-channel are designed and located freely in said layout.

References Cited (Backward Citations)

US4786613A Cited
US5459340A Cited
US5348902A Cited
US5563801A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2001-10-19 2002-04-20 2002-10-20 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2005-10-19 2006-04-20 2006-10-20 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2009-10-19 2010-04-20 2010-10-20 $7700.00 Window Closed / Lapsed

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