Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
145 words
A power-on-reset (P.O.R.) circuit comprising: first monitoring and comparing means for a voltage on a supply node; second means producing a power-on-reset (P.O.R.) signal with an amplitude that tracks the voltage on the supply node until it exceeds a certain threshold; and an output buffer having an input; said first monitoring and comparing means comprising at least one nonvolatile memory element having a control gate coupled to the supply node, and a first current terminal coupled to a ground node and a second current terminal coupled to a first node which is capacitively coupled to the supply node; said second means comprising an intrinsically unbalanced bistable circuit having a node that intrinsically is in a high state at power-on coupled to said first node, and having a node that intrinsically is in a low state at power-on coupled to the input of said output buffer.
Claim 2
Dependent Claim
145 words
A power-on-reset (P.O.R.) circuit comprising: first monitoring and comparing means for a voltage on a supply node; second means producing a power-on-reset (P.O.R.) signal with an amplitude that tracks the voltage on the supply node until it exceeds a certain threshold; and an output buffer having an input; said first monitoring and comparing means comprising at least one nonvolatile memory element having a control gate coupled to the supply node, and a first current terminal coupled to a ground node and a second current terminal coupled to a first node which is capacitively coupled to the supply node; said second means comprising an intrinsically unbalanced bistable circuit having a node that intrinsically is in a high state at power-on coupled to said first node, and having a node that intrinsically is in a low state at power-on coupled to the input of said output buffer.
Claim 3
Dependent Claim
66 words
A P.O.R. circuit according to claim 1, wherein said intrinsically unbalanced bistable circuit comprises two cross-coupled inverting stages, a first stage comprising a pair of complementary, enhancement type transistors and having an output node coupled to said first node, a second stage comprising a pair of complementary transistors having a substantially unmodified threshold and having an output node coupled to the input of said output buffer.
Claim 4
Dependent Claim
44 words
A P.O.R. circuit according to claim 1, further comprising a pass transistor having a gate coupled to the supply node; and wherein the second current terminal of said at least one nonvolatile memory element is coupled to said first node through said pass transistor.
Claim 5
Dependent Claim
53 words
A P.O.R. circuit according to claim 2, wherein said nonvolatile memory element comprises a diffusion coinciding with the second current terminal thereof; wherein the two inverting stages comprise respective diffusions coinciding with the output nodes thereof; and wherein each of said diffusions have an incremented area to increase a relative junction capacitance thereof.
Claim 6
Dependent Claim
176 words
A nonvolatile memory device comprising: an array of nonvolatile memory cells; a redundancy circuit including rows of registers for redundancy addresses; a plurality of power-on-reset circuits to initialize said rows of registers, each power-on-reset circuit comprising first monitoring and comparing means for a voltage on a supply node; second means producing a power-on-reset (P.O.R.) signal with an amplitude that tracks the voltage on the supply node until it exceeds a certain threshold; and an output buffer having an input; said first monitoring and comparing means comprising at least one nonvolatile memory element having a control gate coupled to the supply node, and a first current terminal coupled to a ground node and a second current terminal coupled to a first node which is capacitively coupled to the supply node; said second means comprising an intrinsically unbalanced bistable circuit having a node that intrinsically is in a high state at power-on coupled to said first node, and having a node that intrinsically is in a low state at power-on coupled to the input of said output buffer.
Claim 7
Dependent Claim
176 words
A nonvolatile memory device comprising: an array of nonvolatile memory cells; a redundancy circuit including rows of registers for redundancy addresses; a plurality of power-on-reset circuits to initialize said rows of registers, each power-on-reset circuit comprising first monitoring and comparing means for a voltage on a supply node; second means producing a power-on-reset (P.O.R.) signal with an amplitude that tracks the voltage on the supply node until it exceeds a certain threshold; and an output buffer having an input; said first monitoring and comparing means comprising at least one nonvolatile memory element having a control gate coupled to the supply node, and a first current terminal coupled to a ground node and a second current terminal coupled to a first node which is capacitively coupled to the supply node; said second means comprising an intrinsically unbalanced bistable circuit having a node that intrinsically is in a high state at power-on coupled to said first node, and having a node that intrinsically is in a low state at power-on coupled to the input of said output buffer.
Claim 8
Dependent Claim
65 words
A device according to claim 5, wherein said intrinsically unbalanced bistable circuit comprises two cross-coupled inverting stages, a first stage comprising a pair of complementary, enhancement type transistors and having an output node coupled to said first node, a second stage comprising a pair of complementary transistors having a substantially unmodified threshold and having an output node coupled to the input of said output buffer.
Claim 9
Dependent Claim
43 words
A device according to claim 5, further comprising a pass transistor having a gate coupled to the supply node; and wherein the second current terminal of said at least one nonvolatile memory element is coupled to said first node through said pass transistor.
Claim 10
Dependent Claim
52 words
A device according to claim 6, wherein said nonvolatile memory element comprises a diffusion coinciding with the second current terminal thereof; wherein the two inverting stages comprise respective diffusions coinciding with the output nodes thereof; and wherein each of said diffusions have an incremented area to increase a relative junction capacitance thereof.