Patent US5326980A successfully refreshed from Google Patents.
Patent US5817549A successfully refreshed from Google Patents.
US5817549A
Expired / Lapsed
US
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Method for manufacturing a semiconductor device
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1995-08-30
•
Granted: 1998-10-06
•
Expires: 2015-08-30
Abstract
Abstract A TFT having a crystalline semiconductor layer and a gate insulating film of silicon oxide is manufactured. The gate insulating film is formed by vapor phase deposition such as sputtering or CVD and the deposited silicon oxide is thermally annealed in a reactive nitrogen atmosphere. The silicon oxide film, especially, the boundary portion of the silicon oxide film close the active region is nitrided. Thus, dangling bonds included in the silicon oxide film can be neutralized.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Yasuhiko Takemura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:43
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6739; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10P14/6334; H10P14/6336; H10P14/6338; H10P14/65; H10P14/6516; H10P14/6529; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215
Claims Analysis
Total Claims: 62
Claim 1
Independent Claim
88 words
A method of manufacturing a semiconductor device comprising the steps of: preparing a crystalline semiconductor film comprising silicon in the form of an island on an insulating surface; forming a gate insulating film comprising silicon oxide through vapor phase deposition on and in direct contact with said semiconductor film and treating said gate insulating film with an atmosphere comprising a nitrogen compound gas at 400°-700° C., wherein said nitrogen compound gas is thermally decomposed or excited by making contact with a catalytic material for promoting thermal activation thereof.
Claim 2
Independent Claim
88 words
A method of manufacturing a semiconductor device comprising the steps of: preparing a crystalline semiconductor film comprising silicon in the form of an island on an insulating surface; forming a gate insulating film comprising silicon oxide through vapor phase deposition on and in direct contact with said semiconductor film and treating said gate insulating film with an atmosphere comprising a nitrogen compound gas at 400°-700° C., wherein said nitrogen compound gas is thermally decomposed or excited by making contact with a catalytic material for promoting thermal activation thereof.
Claim 3
Dependent Claim
24 words
The method of claim 1 wherein said vapor phase deposition is selected from the group consisting of a CVD method and a PVD method.
Claim 4
Dependent Claim
22 words
The method of claim 1 wherein said nitrogen compound gas is selected from the group consisting of nitrogen oxide and hydrogen nitride.
Claim 5
Dependent Claim
22 words
The method of claim 1 wherein at least a portion of said gate insulating film close to said semiconductor layer is nitrided.
Claim 6
Dependent Claim
55 words
The method of claim 1 wherein said crystalline semiconductor film contains a catalyst element which is capable of promoting crystallization of an amorphous silicon film, at a concentration in the range of 1×10 15 to 3×10 19 atoms/cm 3 as defined by a minimum concentration of a SIMS analysis with respect to said semiconductor film.
Claim 7
Dependent Claim
14 words
The method of claim 1 wherein said gate insulating film is formed by sputtering.
Claim 8
Dependent Claim
16 words
The method of claim 1 wherein said gate insulating film is formed by an ECR-CVD method.
Claim 9
Dependent Claim
22 words
The method of claim 1 wherein said gate insulating film is formed by CVD using a tetra-ethoxy-silane (TEOS) as a raw material.
Claim 10
Dependent Claim
44 words
The method of claim 1 wherein said gate insulating film is formed by low pressure CVD or plasma CVD using monosilane and oxygen containing gas as a raw material gas, said oxygen containing gas selected from the group consisting of oxygen and dinitrogen monoxide.
Claim 11
Dependent Claim
27 words
The method of claim 1 wherein said semiconductor film is formed on a glass substrate containing silicon, oxygen and boron of which distortion point is 550°-680° C.
Claim 12
Dependent Claim
31 words
The method of claim 1 wherein said semiconductor film includes a channel region and a crystal orientation in said semiconductor film is aligned in substantially one direction within said channel region.
Claim 13
Dependent Claim
24 words
The method of claim 3 wherein each concentration of water and carbon dioxide in said nitrogen compound gas is 1 ppm or lower, respectively.
Claim 14
Dependent Claim
53 words
The method of claim 1 further including etching said gate insulating film, wherein said gate insulating film has an etching rate of not more than 1000 Å/minute when etched at 23° C. with a buffered hydrofluoric acid containing a mixture of hydrogen fluoride, ammonium acetate and acetic acid at a ratio of 1:50:50.
Claim 15
Dependent Claim
19 words
The method of claim 1 wherein said gate insulating film contains nitrogen at 1-5 atoms % after said treating.
Claim 16
Independent Claim
148 words
A method of manufacturing a semiconductor device comprising the steps of: preparing a crystalline semiconductor film comprising silicon in the form of an island on a substrate; forming a gate insulating film comprising silicon oxide through vapor phase deposition on and in direct contact with said semiconductor film; preparing a first chamber and a second chamber connected to each other through a conduit; placing said substrate having said crystalline semiconductor film and said gate insulating film formed thereon in said second chamber; introducing a treatment gas into said first chamber, said treatment gas including at least a nitrogen compound gas; heating said treatment gas in said first chamber in order to activate said treatment gas, said first chamber having a catalytic material for promoting activation of said treatment gas; introducing said activated gas into said second chamber, and treating said gate insulating film with said activated treatment gas.
Claim 17
Independent Claim
148 words
A method of manufacturing a semiconductor device comprising the steps of: preparing a crystalline semiconductor film comprising silicon in the form of an island on a substrate; forming a gate insulating film comprising silicon oxide through vapor phase deposition on and in direct contact with said semiconductor film; preparing a first chamber and a second chamber connected to each other through a conduit; placing said substrate having said crystalline semiconductor film and said gate insulating film formed thereon in said second chamber; introducing a treatment gas into said first chamber, said treatment gas including at least a nitrogen compound gas; heating said treatment gas in said first chamber in order to activate said treatment gas, said first chamber having a catalytic material for promoting activation of said treatment gas; introducing said activated gas into said second chamber, and treating said gate insulating film with said activated treatment gas.
Claim 18
Dependent Claim
19 words
The method of claim 15 wherein said first chamber is maintained at a higher temperature than said second chamber.
Claim 19
Dependent Claim
22 words
The method of claim 16 wherein said substrate is a glass substrate having a strain point in a range of 550°-680° C.
Claim 20
Independent Claim
92 words
A method of manufacturing a semiconductor device comprising the steps of: preparing a crystalline semiconductor film comprising silicon in the form of an island on a substrate; forming a gate insulating film comprising silicon oxide through CVD method on and in direct contact with said semiconductor film, said gate insulating film comprising silicon and oxygen; and treating said gate insulating film with a treatment gas comprising nitrogen at a temperature below a strain point of said substrate, wherein said treatment gas contacts a catalytic material to promote thermal exciting and decomposition thereof.
Claim 21
Independent Claim
92 words
A method of manufacturing a semiconductor device comprising the steps of: preparing a crystalline semiconductor film comprising silicon in the form of an island on a substrate; forming a gate insulating film comprising silicon oxide through CVD method on and in direct contact with said semiconductor film, said gate insulating film comprising silicon and oxygen; and treating said gate insulating film with a treatment gas comprising nitrogen at a temperature below a strain point of said substrate, wherein said treatment gas contacts a catalytic material to promote thermal exciting and decomposition thereof.
Claim 22
Dependent Claim
21 words
The method of claim 18 wherein said treatment gas is selected from the group consisting of nitrogen oxide and hydrogen nitride.
Claim 23
Dependent Claim
21 words
A method according to claim 18 wherein said gate insulating film is formed through plasma CVD using monosilane and dinitrogen monoxide.
Claim 24
Dependent Claim
23 words
A method according to claim 18 wherein said substrate is a glass substrate having a strain point in a range of 550°-680° C.
Claim 25
Dependent Claim
36 words
A method according to claim 18 wherein said treatment gas is selected from the group consisting of N 2 , NO, N 2 O, NO 2 , NH 3 , and N 2 H 6 .
Claim 26
Dependent Claim
20 words
A method according to claim 18 wherein said gate insulating film contains nitrogen at 1-5 atoms % after said treating.
Claim 27
Dependent Claim
65 words
A method according to claim 18 wherein said crystalline semiconductor layer is formed by the steps of: forming an amorphous semiconductor film over said substrate; holding a catalyst material on said amorphous semiconductor film, said catalyst material promoting crystallization of said amorphous semiconductor film; and annealing said substrate having said amorphous semiconductor film and said catalyst material in order to crystallize said amorphous semiconductor film.
Claim 28
Dependent Claim
23 words
A method according to claim 24 wherein said catalyst material is selected from the group consisting of nickel, iron, platinum, palladium and cobalt.
Claim 29
Dependent Claim
33 words
A method according to claim 24 wherein said crystalline semiconductor layer includes said catalyst material for promoting crystallization at a concentration in the range of 1×10 15 to 3×10 19 atoms/cm 3 .
Claim 30
Dependent Claim
32 words
A method according claim 1 wherein said catalytic material for promoting thermal activation of said nitrogen compound gas is selected from the group consisting of platinum, palladium, nickel, titanium, vanadium and cobalt.
Claim 31
Dependent Claim
33 words
A method according to claim 15 wherein said catalytic material for promoting thermal activation of said nitrogen compound gas is selected from the group consisting of platinum, palladium, nickel, titanium, vanadium and cobalt.
Claim 32
Dependent Claim
20 words
A method according to claim 15 wherein said catalytic material is provided in a mesh-like form inside said first chamber.
Claim 33
Dependent Claim
36 words
A method according to claim 15 wherein said treatment gas is selected from the group consisting of N 2 , NO, N 2 O, NO 2 , NH 3 , and N 2 H 6 .
Claim 34
Dependent Claim
20 words
A method according to claim 15 wherein said gate insulating film contains nitrogen at 1-5 atoms % after said treating.
Claim 35
Independent Claim
63 words
A method of manufacturing a semiconductor device comprising the steps of: forming a gate insulating film comprising silicon oxide through vapor phase deposition over a substrate; and treating said gate insulating film with an atmosphere comprising a nitrogen compound gas at 400°-700° C., wherein said nitrogen compound gas is decomposed or excited by making contact with a catalytic material promoting thermal activation thereof.
Claim 36
Independent Claim
63 words
A method of manufacturing a semiconductor device comprising the steps of: forming a gate insulating film comprising silicon oxide through vapor phase deposition over a substrate; and treating said gate insulating film with an atmosphere comprising a nitrogen compound gas at 400°-700° C., wherein said nitrogen compound gas is decomposed or excited by making contact with a catalytic material promoting thermal activation thereof.
Claim 37
Dependent Claim
25 words
A method according to claim 32 wherein said vapor phase deposition is selected from the group consisting of a CVD method and a PVD method.
Claim 38
Dependent Claim
23 words
A method according to claim 32 wherein said nitrogen compound gas is selected from the group consisting of nitrogen oxide and hydrogen nitride.
Claim 39
Dependent Claim
15 words
A method according to claim 32 wherein said gate insulating film is formed by sputtering.
Claim 40
Dependent Claim
17 words
A method according to claim 32 wherein said gate insulating film is formed by an ECR-CVD method.
Claim 41
Dependent Claim
23 words
A method according to claim 32 wherein said gate insulating film is formed by CVD using a tetra-ethoxy-silane (TEOS) as a raw material.
Claim 42
Dependent Claim
45 words
A method according to claim 32 wherein said gate insulating film is formed by low pressure CVD or plasma CVD using monosilane and oxygen containing gas as a raw material gas, said oxygen containing gas selected from, the group consisting of oxygen and dinitrogen monoxide.
Claim 43
Dependent Claim
25 words
A method according to claim 32 wherein each concentration of water and carbon dioxide in said nitrogen compound gas is 1 ppm or lower, respectively.
Claim 44
Dependent Claim
54 words
A method according to claim 32 wherein further including etching said gate insulating film, wherein said gate insulating film has an etching rate of not more than 1000 Å/minute when it is etched with a buffered hydrofluoric acid containing a mixture of hydrogen fluoride, ammonium acetate and acetic acid at a ratio of 1:50:50.
Claim 45
Dependent Claim
20 words
A method according to claim 32 wherein said gate insulating film contains nitrogen at 1-5 atoms % after said treating.
Claim 46
Dependent Claim
33 words
A method according to claim 32 wherein said catalytic material for promoting thermal activation of said nitrogen compound gas is selected from the group consisting of platinum, palladium, nickel, titanium, vanadium and cobalt.
Claim 47
Independent Claim
116 words
A method of manufacturing a semiconductor device comprising the steps of: forming a gate insulating film comprising silicon oxide through vapor phase deposition over a substrate; placing said substrate having a crystalline semiconductor film and said gate insulating film formed thereon in a first chamber; introducing a treatment gas into a second chamber connected with said first chamber, said treatment gas including at least a nitrogen compound gas; heating said treatment gas in said second chamber in order to activate said treatment gas, said second chamber having a catalytic material for promoting activation of said treatment gas; introducing said activated gas into said first chamber, and treating said gate insulating film with said activated treatment gas.
Claim 48
Independent Claim
116 words
A method of manufacturing a semiconductor device comprising the steps of: forming a gate insulating film comprising silicon oxide through vapor phase deposition over a substrate; placing said substrate having a crystalline semiconductor film and said gate insulating film formed thereon in a first chamber; introducing a treatment gas into a second chamber connected with said first chamber, said treatment gas including at least a nitrogen compound gas; heating said treatment gas in said second chamber in order to activate said treatment gas, said second chamber having a catalytic material for promoting activation of said treatment gas; introducing said activated gas into said first chamber, and treating said gate insulating film with said activated treatment gas.
Claim 49
Dependent Claim
20 words
A method according to claim 43 wherein said second chamber is maintained at a higher temperature than said first chamber.
Claim 50
Dependent Claim
23 words
A method according to claim 43 wherein said substrate is a glass substrate having a strain point in a range of 550°-680° C.
Claim 51
Dependent Claim
33 words
A method according to claim 43 wherein said catalytic material for promoting thermal activation of said nitrogen compound gas is selected from the group consisting of platinum, palladium, nickel, titanium, vanadium and cobalt.
Claim 52
Dependent Claim
20 words
A method according to claim 43 wherein said catalytic material is provided in a mesh-like form inside said second chamber.
Claim 53
Dependent Claim
36 words
A method according to claim 43 wherein said treatment gas is selected from the group consisting of N 2 , NO, N 2 O, NO 2 , NH 3 , and N 2 H 6 .
Claim 54
Dependent Claim
20 words
A method according to claim 43 wherein said gate insulating film contains nitrogen at 1-5 atoms % after said treating.
Claim 55
Independent Claim
70 words
A method of manufacturing a semiconductor device comprising the steps of: preparing, over a substrate, a crystalline semiconductor film comprising silicon and a gate insulating film through vapor phase method in contact with said semiconductor film, said gate insulating film comprising silicon and oxygen; and treating said gate insulating film with a treatment gas comprising nitrogen, wherein said treatment gas contacts a catalytic material to promoted exciting and decomposition thereof.
Claim 56
Independent Claim
70 words
A method of manufacturing a semiconductor device comprising the steps of: preparing, over a substrate, a crystalline semiconductor film comprising silicon and a gate insulating film through vapor phase method in contact with said semiconductor film, said gate insulating film comprising silicon and oxygen; and treating said gate insulating film with a treatment gas comprising nitrogen, wherein said treatment gas contacts a catalytic material to promoted exciting and decomposition thereof.
Claim 57
Dependent Claim
22 words
A method according to claim 50 wherein said treatment gas is selected from the group consisting of nitrogen oxide and hydrogen nitride.
Claim 58
Dependent Claim
27 words
A method according to claim 50 wherein said step of treating said gate insulating film is conducted at a temperature below a strain point of said substrate.
Claim 59
Dependent Claim
21 words
A method according to claim 50 wherein said gate insulating film is formed through plasma CVD using monosilane and dinitrogen monoxide.
Claim 60
Dependent Claim
23 words
A method according to claim 50 wherein said substrate is a glass substrate having a strain point in a range of 550°-680° C.
Claim 61
Dependent Claim
36 words
A method according to claim 50 wherein said treatment gas is selected from the group consisting of N 2 , NO, N 2 O, NO 2 , NH 3 , and N 2 H 6 .
Claim 62
Dependent Claim
19 words
A method according to claim 50 wherein said gate insulating film contains nitrogen at 1-5 atoms after said treating.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2001-10-05 | 2002-04-06 | 2002-10-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-10-05 | 2006-04-06 | 2006-10-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-10-05 | 2010-04-06 | 2010-10-06 | $7700.00 | Window Closed / Lapsed |