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US5815027A Expired / Lapsed US ⏱️ 0.0 years remaining

Circuit configuration for detecting a load current of a power semiconductor component with a source-side load

Assignee: Infineon Technologies AG
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Filing: 1996-06-07
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Granted: 1998-09-29
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Expires: 2016-06-07
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Abstract

Abstract A field-effect-controllable power semiconductor component has a drain terminal, a source terminal, a gate terminal, a drain-to-source voltage and a load current. A circuit configuration for detecting the load current of the power semiconductor component includes a further field-effect-controllable semiconductor component through which a fraction of the load current flows. The further semiconductor component has a drain terminal connected to the drain terminal of the power semiconductor component, a gate terminal connected to the gate terminal of the power semiconductor component, a source terminal and a drain-to-source voltage. A resistor at which a voltage proportional to the load current can be picked up, is connected to a fixed potential terminal. A controllable resistor is connected between the resistor and the source terminal of the further semiconductor component. The controllable resistor adjusts the current of the further semiconductor component so that the drain-to-source voltages of the power semiconductor component and the further semiconductor component are equal to one another.

Inventors

  • 👤 Jenoe Tihanyi
  • 👤 Adam-Istvan Koroncai

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-30 20:09
CPC Classifications
G; G01; G01R; G01R19/00; G05; G05F; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; G05F3/20; G05F3/24; G01R1/00; G01R1/20; G01R1/203; G01R19/0092; H; H03; H03K; H03K17/00; H03K17/14; H03K17/145; H03K2217/00; H03K2217/0027

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 276 words
A circuit assembly, comprising: a field-effect-controllable power semiconductor component having a drain terminal, a source terminal, a gate terminal, a drain-to-source voltage and a load current; and a circuit configuration for detecting the load current of said field-effect-controllable power semiconductor component, said circuit configuration including: a further field-effect-controllable semiconductor component through which a fraction of the load current flows, said further field-effect-controllable semiconductor component having a drain terminal connected to the drain terminal of said field-effect-controllable power semiconductor component, a gate terminal connected to the gate terminal of said field-effect-controllable power semiconductor component, a source terminal and a drain-to-source voltage, a fixed potential terminal, one resistor at which a voltage proportional to the load current can be picked up, said one resistor being connected to said fixed potential terminal, and a controllable resistor connected between said one resistor and the source terminal of said further field-effect-controllable semiconductor component, said controllable resistor adjusting the current of said further field-effect-controllable semiconductor component for setting the drain-to-source voltages of said field-effect-controllable power semiconductor component and said further field-effect-controllable semiconductor component equal to one another, a differential amplifier having a first input connected to the source terminal of said field-effect-controllable power semiconductor component, a second input connected to the source terminal of said further field-effect-controllable semiconductor component and an output, said controllable resistor being a MOSFET having a control input connected to the output of said differential amplifier, and a further differential amplifier having a first input connected to the source terminal of said field-effect-controllable power semiconductor component and a second input receiving a voltage being greater than an offset voltage of said differential amplifier connected to said controllable resistor.
Claim 2
Dependent Claim 276 words
A circuit assembly, comprising: a field-effect-controllable power semiconductor component having a drain terminal, a source terminal, a gate terminal, a drain-to-source voltage and a load current; and a circuit configuration for detecting the load current of said field-effect-controllable power semiconductor component, said circuit configuration including: a further field-effect-controllable semiconductor component through which a fraction of the load current flows, said further field-effect-controllable semiconductor component having a drain terminal connected to the drain terminal of said field-effect-controllable power semiconductor component, a gate terminal connected to the gate terminal of said field-effect-controllable power semiconductor component, a source terminal and a drain-to-source voltage, a fixed potential terminal, one resistor at which a voltage proportional to the load current can be picked up, said one resistor being connected to said fixed potential terminal, and a controllable resistor connected between said one resistor and the source terminal of said further field-effect-controllable semiconductor component, said controllable resistor adjusting the current of said further field-effect-controllable semiconductor component for setting the drain-to-source voltages of said field-effect-controllable power semiconductor component and said further field-effect-controllable semiconductor component equal to one another, a differential amplifier having a first input connected to the source terminal of said field-effect-controllable power semiconductor component, a second input connected to the source terminal of said further field-effect-controllable semiconductor component and an output, said controllable resistor being a MOSFET having a control input connected to the output of said differential amplifier, and a further differential amplifier having a first input connected to the source terminal of said field-effect-controllable power semiconductor component and a second input receiving a voltage being greater than an offset voltage of said differential amplifier connected to said controllable resistor.
Claim 3
Dependent Claim 15 words
The circuit assembly according to claim 1, wherein said differential amplifier is an operational amplifier.
Claim 4
Dependent Claim 17 words
The circuit assembly according to claim 1, wherein said fixed potential terminal is a ground potential terminal.
Claim 5
Dependent Claim 27 words
The circuit assembly according to claim 1, wherein said field-effect-controllable power semiconductor component and said further field-effect-controllable semiconductor component have similar I D /U DS characteristic curves.
Claim 6
Dependent Claim 27 words
The circuit assembly according to claim 1, wherein said field-effect-controllable power semiconductor component and said further field-effect-controllable semiconductor component include many cells integrated on a single chip.

References Cited (Backward Citations)

EP0227149A1 Cited
EP0247995A1 Cited
EP0274995A1 Cited
US4885477A Cited
US5097456A Cited
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DE68904664D1 Cited
FR2642176A1 Cited
EP0438363A1 Cited
US5652540A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2001-09-28 2002-03-30 2002-09-29 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2005-09-28 2006-03-30 2006-09-29 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2009-09-28 2010-03-30 2010-09-29 $7700.00 Window Closed / Lapsed

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