US5814895A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Static random access memory having transistor elements formed on side walls of a trench in a semiconductor substrate
Assignee: Sony Corp
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Filing: 1996-12-19
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Granted: 1998-09-29
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Expires: 2016-12-19
Abstract
Abstract In a static random access memory (SRAM), a memory cell ratio is increased without deteriorating an integration degree of this SRAM. The static random access memory is arranged by: trenches formed in a semiconductor substrate and an insulating layer for isolating elements within a memory cell forming region; one pair of word transistors; one pair of driver transistors for constituting a flip-flop by forming channel regions of the driver transistors in side surfaces of the trenches and by cross-connecting gate electrodes thereof and drain electrodes thereof at one pair of input/output terminals of the flip-flop; and one pair of word transistors connected between the one pair of input/output terminals of the flip-flop and a bit line.
Inventors
- 👤 Teruo Hirayama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 18:50
CPC Classifications
H; H10; H10B; H10B10/00; H10B10/15; Y; Y10; Y10S; Y10S257/00; Y10S257/903; Y10S257/904
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
92 words
A semiconductor memory comprising: a recess formed in a semiconductor substrate; a drain diffusion of a drive transistor formed under a surface of said recess; a gate electrode formed around a side of the recess; a drain diffusion of a word transistor formed under a surface of said semiconductor substrate adjacent said recess; and a conductive structure beginning at a base of said recess extending upward to the drain diffusion of the word transistor which electrically connects the drain diffusion of the word transistor to the drain diffusion of the drive transistor.
Claim 2
Dependent Claim
92 words
A semiconductor memory comprising: a recess formed in a semiconductor substrate; a drain diffusion of a drive transistor formed under a surface of said recess; a gate electrode formed around a side of the recess; a drain diffusion of a word transistor formed under a surface of said semiconductor substrate adjacent said recess; and a conductive structure beginning at a base of said recess extending upward to the drain diffusion of the word transistor which electrically connects the drain diffusion of the word transistor to the drain diffusion of the drive transistor.
Claim 3
Dependent Claim
20 words
The semiconductor memory of claim 1, wherein the drain diffusion of the drive transistor is formed exclusively under the recess.
Claim 4
Dependent Claim
50 words
The semiconductor memory of claim 2, wherein the drain diffusion of the drive transistor is connected to the gate of another drive transistor through a connection formed through the recess and the drain diffusion of said another drive transistor is connected to the gate on the side of the recess.
Claim 5
Dependent Claim
123 words
A static random access memory comprising: trenches formed in a semiconductor substrate and an insulating layer for isolating elements within a memory cell forming region wherein said insulating layer for isolating elements separates adjacent trenches and further wherein a depth of the trenches does not exceed a depth of the insulating layer; one pair of word transistors; one pair of driver transistors for constituting a flip-flop by forming channel regions of said driver transistors in side surfaces of said trenches and by cross-connecting gate electrodes thereof and drain electrodes thereof to each other at one pair of input/output terminals of said flip-flop; and one pair of word transistors connected between said one pair of input/output terminals of said flip-flop and a bit line.
Claim 6
Dependent Claim
123 words
A static random access memory comprising: trenches formed in a semiconductor substrate and an insulating layer for isolating elements within a memory cell forming region wherein said insulating layer for isolating elements separates adjacent trenches and further wherein a depth of the trenches does not exceed a depth of the insulating layer; one pair of word transistors; one pair of driver transistors for constituting a flip-flop by forming channel regions of said driver transistors in side surfaces of said trenches and by cross-connecting gate electrodes thereof and drain electrodes thereof to each other at one pair of input/output terminals of said flip-flop; and one pair of word transistors connected between said one pair of input/output terminals of said flip-flop and a bit line.
Claim 7
Dependent Claim
46 words
A static random access memory as claimed in claim 4 wherein: a drain of said driver transistor formed in a bottom portion of said trench, and a source of said driver transistor formed in a major surface of said semiconductor substrate located adjacent to said trench.
Claim 8
Dependent Claim
29 words
A static random access memory as claimed in claim 4 wherein: the gate electrodes of said one pair of driver transistors are formed by a first layer wiring pattern.
Claim 9
Dependent Claim
28 words
A static random access memory as claimed in claim 4 wherein: said flip-flop is formed by a second layer of wiring patterns which are cross-connected to each other.
Claim 10
Dependent Claim
54 words
A static random access memory as claimed in claim 4 wherein: depths of said trenches are made in such a manner that said depths do not exceed a depth of said elements isolating insulating layer, and gate electrodes of said driver transistors are formed via gate insulating layers on side surfaces of said trenches.
Claim 11
Dependent Claim
26 words
A static random access memory as claimed in claim 4 wherein: channel regions of said word transistors are formed in the side surfaces of said trenches.
Claim 12
Dependent Claim
77 words
A static random access memory as claimed in claim 9 wherein: said word transistors are constituted by series-connecting two transistors with each other, in which an impurity diffusion layer is commonly used as a source-to-drain region and is formed in a bottom portion where said driver transistors are formed, and conductive layers are used as the respective gate electrodes and are formed via a gate insulating layer on both side surfaces of the trenches of said portion.
Claim 13
Dependent Claim
31 words
A static random access memory as claimed in claim 9 wherein: gate electrodes of said driver transistors and the gate electrodes of said word transistors are formed at the same step.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-09-28 | 2002-03-30 | 2002-09-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-09-28 | 2006-03-30 | 2006-09-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-09-28 | 2010-03-30 | 2010-09-29 | $7700.00 | Window Closed / Lapsed |