US5812231A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Display unit
Assignee: Canon Inc
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Filing: 1995-06-19
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Granted: 1998-09-22
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Expires: 2015-06-19
Abstract
Abstract A high-density impurity semiconductor region having the same conductivity type as a single-crystal silicon substrate is formed in addition to a main circuit portion of a peripheral circuit on the single-crystal silicon substrate. This semiconductor region is connected to a given potential point directly leading to an electric source. Alternatively, at a part of the peripheral drive circuit, a high-density impurity semiconductor region having a conductivity type reverse to that of the single-crystal silicon substrate is formed, and this semiconductor region is connected to a given potential point directly leading to an electric source. This can solve the problem that photocarriers (electrons and/or holes) caused by the light having not cut off and having entered into the single-crystal silicon region may enter into the peripheral drive circuit through the single-crystal silicon substrate to cause misoperation of the circuit.
Inventors
- 👤 Tetsunobu Kochi
- 👤 Mamoru Miyawaki
- 👤 Shunsuke Inoue
- 👤 Takanori Watanabe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 12:00
CPC Classifications
G; G09; G09G; G09G3/00; G09G3/20; G09G3/34; G09G3/36; G09G3/3611; G09G3/3685; G09G3/3688; G09G3/3648; H; H10; H10D; H10D86/00; H10D86/201; H10D86/80; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; G02F1/13454; G02F1/136; G02F1/1362; G02F1/136277; G02F1/136281; G09G2310/00; G09G2310/02; G09G2310/0243; G09G2310/0248; G09G2310/0264; G09G2310/0297; G09G3/2007; G09G3/2011
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
44 words
A display unit having an image display portion and a drive circuit which are integrally formed, wherein the drive circuit has an internal main circuit portion and a high-density impurity semiconductor region, for absorbing photocarriers, directly connected to a wiring of an electric source.
Claim 2
Dependent Claim
44 words
A display unit having an image display portion and a drive circuit which are integrally formed, wherein the drive circuit has an internal main circuit portion and a high-density impurity semiconductor region, for absorbing photocarriers, directly connected to a wiring of an electric source.
Claim 3
Dependent Claim
33 words
The display unit according to claim 1, wherein said high-density impurity semiconductor region is provided between the main circuit portion and a periphery of a substrate on which the drive circuit is formed.
Claim 4
Dependent Claim
45 words
The display unit according to claim 1, further comprising a substrate, wherein the main circuit portion is formed on a first side of said substrate, and said high-density impurity semiconductor region is provided on a second side of said substrate opposite to said first side.
Claim 5
Dependent Claim
36 words
The display unit according to claim 1, wherein said drive circuit is formed on a single-crystal semiconductor substrate, and said high-density impurity semiconductor region has a conductivity type reverse to that of the single-crystal semiconductor substrate.
Claim 6
Dependent Claim
17 words
The display unit according to claim 4, wherein said single-crystal semiconductor substrate is formed of bulk Si.
Claim 7
Dependent Claim
34 words
The display unit according to claim 1, wherein said drive circuit is formed on a single-crystal semiconductor substrate, and said high-density impurity semiconductor region has a same conductivity type as the single-crystal semiconductor substrate.
Claim 8
Dependent Claim
21 words
The display unit according to claim 1, wherein said wiring is connected to a high-potential point (Vcc) of the electric source.
Claim 9
Dependent Claim
22 words
The display unit according to claim 7, wherein said high-potential point (Vcc) has a voltage of from 5 V to 30 V.
Claim 10
Dependent Claim
21 words
The display unit according to claim 1, wherein said wiring is connected to a low-potential point (GND) of the electric source.
Claim 11
Dependent Claim
18 words
The display unit according to claim 1, wherein said high-density impurity semiconductor region is formed in a trench.
Claim 12
Dependent Claim
21 words
The display unit according to claim 1, wherein said high-density impurity semiconductor has a buried insulating layer in the vicinity thereof.
Claim 13
Dependent Claim
23 words
The display unit according to claim 1, wherein said high-density impurity semiconductor region has a depth of from 0.1 μm to 1 μm.
Claim 14
Dependent Claim
19 words
The display unit according to claim 1, wherein said high-density impurity semiconductor region is formed by implantation of As.
Claim 15
Dependent Claim
19 words
The display unit according to claim 1, wherein said high-density impurity semiconductor region is formed by implantation of P.
Claim 16
Dependent Claim
19 words
The display unit according to claim 1, wherein said high-density impurity semiconductor region is formed by implantation of B.
Claim 17
Dependent Claim
29 words
The display unit according to claim 1, wherein said high-density impurity semiconductor region has an impurity density of from 1×10 19 cm -3 to 1×10 22 cm -3 .
Claim 18
Dependent Claim
29 words
The display unit according to claim 1, wherein said high-density impurity semiconductor region and said main circuit portion are at a distance of from 1 μm to 500 μm.
Claim 19
Dependent Claim
36 words
The display unit according to claim 1, wherein said display unit is a liquid-crystal display unit, said image display portion having a pair of substrates, and a liquid-crystal material being held between the pair of substrates.
Claim 20
Dependent Claim
31 words
The display unit according to claim 18, wherein said liquid-crystal display unit is an active matrix liquid-crystal display device, said image display portion having a switching device for each picture element.
Claim 21
Dependent Claim
15 words
The display unit according to claim 19, wherein said switching device is a thin-film transistor.
Claim 22
Dependent Claim
16 words
The display unit according to claim 20, wherein said thin-film transistor is formed of polycrystalline Si.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-09-21 | 2002-03-23 | 2002-09-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-09-21 | 2006-03-23 | 2006-09-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-09-21 | 2010-03-23 | 2010-09-22 | $7700.00 | Window Closed / Lapsed |