US5811870A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Antifuse structure
Assignee: GlobalFoundries Inc
•
Filing: 1997-05-02
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Granted: 1998-09-22
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Expires: 2017-05-02
Abstract
Abstract According to the preferred embodiment, an antifuse structure and method for personalizing a semiconductor device is provided that overcomes the limitations of the prior art. The preferred embodiment antifuse comprises a two layer transformable insulator core between two electrodes. The transformable core is normally non-conductive but can be transformed into a conductive material by supplying a sufficient voltage across the electrodes. The two layer core preferably comprises an injector layer and a dielectric layer. The injector layer preferably comprises a two phase material such as silicon rich nitride or silicon rich oxide. Initially, the injector layer and dielectric layer are non-conductive. When a sufficient voltage is applied the core fuses together and becomes conductive.
Inventors
- 👤 Arup Bhattacharyya
- 👤 Robert M. Geffken
- 👤 Chung H. Lam
- 👤 Robert K. Leidy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 09:20
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/491; H10W20/01; H10W20/071; H10W20/093; H10W20/094
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
69 words
An antifuse structure, comprising: a) a pair of electrodes; b) a dielectric layer between said electrodes; and c) an injector layer between said electrodes and adjacent said dielectric layer, said injector layer injecting charge into said dielectric layer when a voltage bias is applied to said pair of electrodes, said injecting charge permanently changing the conductivity characteristics of said dielectric layer such that said dielectric layer is substantially conductive.
Claim 2
Dependent Claim
69 words
An antifuse structure, comprising: a) a pair of electrodes; b) a dielectric layer between said electrodes; and c) an injector layer between said electrodes and adjacent said dielectric layer, said injector layer injecting charge into said dielectric layer when a voltage bias is applied to said pair of electrodes, said injecting charge permanently changing the conductivity characteristics of said dielectric layer such that said dielectric layer is substantially conductive.
Claim 3
Dependent Claim
41 words
The antifuse of claim 1 wherein said antifuse is disposed adjacent other electrical circuit elements, and wherein said injector layer injects said charge at applied electric fields that do not adversely affect the electrical characteristics of said other electrical circuit elements.
Claim 4
Dependent Claim
12 words
The antifuse of claim 1 wherein said dielectric layer comprises silicon dioxide.
Claim 5
Dependent Claim
12 words
The antifuse of claim 1 wherein said dielectric layer comprises silicon nitride.
Claim 6
Dependent Claim
13 words
The antifuse of claim 1 wherein said injector layer comprises silicon rich oxide.
Claim 7
Dependent Claim
19 words
The antifuse of claim 5 wherein said silicon rich oxide has an apparent dielectric constant of greater than 12.
Claim 8
Dependent Claim
19 words
The antifuse of claim 5 wherein said silicon rich oxide has an apparent dielectric constant between 14 and 25.
Claim 9
Dependent Claim
13 words
The antifuse of claim 1 wherein said injector layer comprises silicon rich nitride.
Claim 10
Dependent Claim
19 words
The antifuse of claim 8 wherein said silicon rich nitride has an apparent dielectric constant of greater than 12.
Claim 11
Dependent Claim
19 words
The antifuse of claim 8 wherein said silicon rich nitride has an apparent dielectric constant between 14 and 20.
Claim 12
Dependent Claim
80 words
An antifuse structure, comprising: a) a pair of electrodes; and b) a first dielectric layer disposed between said pair of electrodes; and c) a silicon rich dielectric layer disposed between said first dielectric layer and one of said electrodes, said silicon rich dielectric layer having an apparent dielectric constant greater than 12, said silicon rich dielectric layer injecting charge into said first dielectric layer to alter its conductivity characteristics sufficiently to electrically couple said pair of electrodes to one another.
Claim 13
Dependent Claim
80 words
An antifuse structure, comprising: a) a pair of electrodes; and b) a first dielectric layer disposed between said pair of electrodes; and c) a silicon rich dielectric layer disposed between said first dielectric layer and one of said electrodes, said silicon rich dielectric layer having an apparent dielectric constant greater than 12, said silicon rich dielectric layer injecting charge into said first dielectric layer to alter its conductivity characteristics sufficiently to electrically couple said pair of electrodes to one another.
Claim 14
Dependent Claim
15 words
The antifuse of claim 11 wherein said silicon rich dielectric layer comprises silicon rich nitride.
Claim 15
Dependent Claim
15 words
The antifuse of claim 11 wherein said silicon rich dielectric layer comprises silicon rich oxide.
Claim 16
Dependent Claim
17 words
The antifuse of claim 11 wherein at least one of said pair of electrodes comprises doped silicon.
Claim 17
Dependent Claim
16 words
The antifuse of claim 11 wherein at least one of said pair of electrodes comprises tungsten.
Claim 18
Dependent Claim
16 words
The antifuse of claim 11 wherein at least one of said pair of electrodes comprises aluminum.
Claim 19
Dependent Claim
16 words
The antifuse of claim 11 wherein at least one of said pair of electrodes comprises copper.
Claim 20
Dependent Claim
16 words
The antifuse of claim 11 wherein at least one of said pair of electrodes comprises polysilicon.
Claim 21
Dependent Claim
18 words
The antifuse of claim 11 wherein at least one of said pair of electrodes comprises an interlevel interconnect.
Claim 22
Dependent Claim
19 words
The antifuse of claim 11 wherein at least one of said pair of electrodes comprises a doped semiconductor region.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-09-21 | 2002-03-23 | 2002-09-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-09-21 | 2006-03-23 | 2006-09-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-09-21 | 2010-03-23 | 2010-09-22 | $7700.00 | Window Closed / Lapsed |