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US5811375A
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Superconducting multilayer interconnection formed of oxide superconductor material and method for manufacturing the same
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1995-06-30
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Granted: 1998-09-22
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Expires: 2015-06-30
Abstract
Abstract A superconducting multilayer interconnection comprises a substrate having a principal surface, a first superconducting current path of a c-axis orientated oxide superconductor thin film formed on the principal surface of the substrate, an insulating layer on the first superconducting current path, and a second superconducting current path of a c-axis orientated oxide superconductor thin film formed on the insulating layer so that the first and second superconducting current paths are insulated by the insulating layer. The superconducting multilayer interconnection further comprises a superconducting interconnect current path of an a-axis orientated oxide superconductor thin film, through which the first and second superconducting current paths are electrically connected each other. In the superconducting multilayer interconnection, at least one of the first and second superconducting current paths has a step portion and the superconducting interconnect current path is positioned at the step portion so that the interface area between the superconducting current path and the superconducting interconnect current path is enlarged.
Inventors
- 👤 Takao Nakamura
- 👤 Hiroshi Inada
- 👤 Michitomo Iiyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:14
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W70/62; H10W70/66; H10W70/668; H10N; H10N69/00; Y; Y10; Y10S; Y10S505/00; Y10S505/70; Y10S505/701; Y10S505/703
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
232 words
A method for manufacturing a superconducting multilayer interconnection comprising the steps of forming a seed layer on which an a-axis orientated oxide superconductor thin film grows under a condition of growing c-axis orientated oxide superconductor thin film at a portion of a principal surface of a substrate, on which superconducting interconnect current path will be positioned, forming a first oxide superconductor thin film under a condition of growing c-axis orientated oxide superconductor thin film on the principal surface of the substrate so that an a-axis orientated oxide superconductor thin film grows on the seed layer, processing the first oxide superconductor thin film so as to form a first superconducting current path, depositing an insulating layer on the first superconducting current path, pattern-etching the insulating layer so that the a-axis orientated oxide superconductor thin film is exposed and the first superconducting current path is not exposed, forming a second oxide superconductor thin film under a condition of growing c-axis orientated oxide superconductor thin film on the insulating layer so that an a-axis orientated oxide superconductor thin film grows on the exposed a-axis orientated oxide superconductor thin film and processing the second oxide superconductor thin film so as to form a second superconducting current path which is electrically connected to the first superconducting current path through a superconducting interconnect current path formed of the a-axis orientated oxide superconductor thin films on the seed layer.
Claim 2
Independent Claim
232 words
A method for manufacturing a superconducting multilayer interconnection comprising the steps of forming a seed layer on which an a-axis orientated oxide superconductor thin film grows under a condition of growing c-axis orientated oxide superconductor thin film at a portion of a principal surface of a substrate, on which superconducting interconnect current path will be positioned, forming a first oxide superconductor thin film under a condition of growing c-axis orientated oxide superconductor thin film on the principal surface of the substrate so that an a-axis orientated oxide superconductor thin film grows on the seed layer, processing the first oxide superconductor thin film so as to form a first superconducting current path, depositing an insulating layer on the first superconducting current path, pattern-etching the insulating layer so that the a-axis orientated oxide superconductor thin film is exposed and the first superconducting current path is not exposed, forming a second oxide superconductor thin film under a condition of growing c-axis orientated oxide superconductor thin film on the insulating layer so that an a-axis orientated oxide superconductor thin film grows on the exposed a-axis orientated oxide superconductor thin film and processing the second oxide superconductor thin film so as to form a second superconducting current path which is electrically connected to the first superconducting current path through a superconducting interconnect current path formed of the a-axis orientated oxide superconductor thin films on the seed layer.
Claim 3
Dependent Claim
20 words
A method claimed in claim 1, wherein the seed layer is formed of an a-axis orientated oxide superconductor thin film.
Claim 4
Dependent Claim
28 words
A method claimed in claim 1, wherein the seed layer is formed of an a-axis orientated Pr 1 Ba 2 Cu 3 O 7- ε oxide thin film.
References Cited (Backward Citations)
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JPH03183207A
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US5567674A
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US5366953A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-09-21 | 2002-03-23 | 2002-09-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-09-21 | 2006-03-23 | 2006-09-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-09-21 | 2010-03-23 | 2010-09-22 | $7700.00 | Window Closed / Lapsed |