Bi-based dielectric thin films, and compositions and method for forming them

Abstract

Abstract Dielectrics represented by (SrxBi1-x)Bi2Ta2Oy, wherein 0<x<1, and y represents the total number of oxygen atoms bonded to the respective metals, and thin films thereof, can be prepared by repeating the steps of applying compositions for forming the Sr-Bi-Ta-O-based dielectric thin films on substrates, drying and conducting a first-firing a plurality of times until the desired film thickness is achieved, and then conducting a second-firing for crystallization and compositions for forming Bi-based ferroelectric thin films and target materials for forming Bi-based ferroelectric thin films, both represented by the metal composition ((Sra(Bab, Pbc))xBiy(Ta and/or Nb)z wherein 0.4</=X<1.0, 1.5</=Y</=3.5, Z=2, 0.7X</=a<X, and 0<b+c</=0.3X can be formed by repeatedly applied onto substrates, dried and subjected to a first-firing a plurality of times until the desired film thickness is achieved, and then subjected to a second-firing for crystallization, while the target materials are used to form films by sputtering, and the films undergo heat treatment during and/or after their formation for crystallization.

Inventors

• 👤 Katsumi Ogi
• 👤 Tadashi Yonezawa
• 👤 Tsutomu Atsuki

Bibliographic Details