US5601869A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Metal polyoxyalkylated precursor solutions in an octane solvent and method of making the same
Assignee: Symetrix Corp
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Filing: 1995-06-07
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Granted: 1997-02-11
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Expires: 2015-06-07
Abstract
Abstract A liquid precursor solution for use according to a method of manufacturing metal oxide electronic components includes a polyoxyalkylated metal complex dispersed in an alkane solvent. The alkane solvent is preferably n-octane.
Inventors
- 👤 Michael C. Scott
- 👤 Carlos A. Paz de Araujo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:00
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/66; H10P14/668; C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45561; C23C18/00; C23C18/02; C23C18/12; C23C18/1204; C23C18/1208; C23C18/1216; C23C18/1225; C30; C30B; C30B29/00; C30B29/60; C30B29/68; C30B7/00; C30B7/005; H01; H01C; H01C7/00; H01C7/10; H01C7/1013; H01C7/105; H01C7/108; H01C7/112; H10B; H10B12/00; H10B12/30; H10B53/00; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/684; H10P14/662; H10P14/63; H10P14/6326; H10P14/6342; H10P14/65; H10P14/6516; H10P14/6529; H10P14/6544; H10P14/69; H10P14/692; H10P14/6938; H10P14/69398
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
129 words
A method of producing a thin-film metal oxide integrated circuit quality thin-film suitable for use in electronic components from a liquid precursor solution, said method comprising the steps of: reacting a metal alkoxycarboxylate with a reagent selected from a group consisting of metal carboxylates and metal alkoxides to form a bimetallic complex having an --O--M--O--M--O-- group, said reaction occurring in an essentially water-free solution having at least a 5% molar concentration of said metal alkoxycarboxylate; wherein M is a metal; combining said bimetallic complex with an octane solvent, thereby forming a mixture; coating an integrated circuit substrate with said mixture to form a film of said mixture upon said substrate; and annealing said film to form a solid metal oxide having a thickness of less than about ten microns.
Claim 2
Independent Claim
129 words
A method of producing a thin-film metal oxide integrated circuit quality thin-film suitable for use in electronic components from a liquid precursor solution, said method comprising the steps of: reacting a metal alkoxycarboxylate with a reagent selected from a group consisting of metal carboxylates and metal alkoxides to form a bimetallic complex having an --O--M--O--M--O-- group, said reaction occurring in an essentially water-free solution having at least a 5% molar concentration of said metal alkoxycarboxylate; wherein M is a metal; combining said bimetallic complex with an octane solvent, thereby forming a mixture; coating an integrated circuit substrate with said mixture to form a film of said mixture upon said substrate; and annealing said film to form a solid metal oxide having a thickness of less than about ten microns.
Claim 3
Dependent Claim
33 words
The method as set forth in claim 1 including a step of providing said mixture with a plurality of metals in effective amounts for yielding a layered superlattice material in said annealing step.
Claim 4
Dependent Claim
24 words
The method as set forth in claim 2 wherein said metals in said effective amounts spontaneously form into layered superlattices during said annealing step.
Claim 5
Dependent Claim
38 words
The method as set forth in claim 1 wherein said providing step includes a step of selecting said metals to form said layered superlattice material selected from a group consisting of strontium bismuth tantalate and strontium bismuth niobate.
Claim 6
Dependent Claim
31 words
The method as set forth in claim 1 including a step of providing said solution with a plurality of metals in effective amounts for yielding a perovskite in said annealing step.
Claim 7
Dependent Claim
26 words
The method as set forth in claim 5 wherein said metals in said effective amounts are selected to form barium strontium titanate in said annealing step.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-02-11 | 2000-08-12 | 2001-02-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-02-11 | 2004-08-12 | 2005-02-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-02-11 | 2008-08-12 | 2009-02-11 | $7700.00 | Window Closed / Lapsed |