US5804855A
Expired / Lapsed
US
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Thin film transistors
Assignee: Micron Technology Inc
•
Filing: 1996-07-15
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Granted: 1998-09-08
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Expires: 2016-07-15
Abstract
Abstract A thin film transistor includes a thin film transistor layer having a source region, a channel region and a drain region. In one implementation, a gate of the transistor is disposed laterally proximate the thin film channel region and comprises an annulus which laterally encircles the laterally proximate thin film channel region. In another implementation, a channel region of a thin film transistor extends elevationally away from a substrate. Source and drain regions are operatively associated with the channel region and are elevationally spaced therealong and apart from one another. A gate is disposed over the substrate and laterally proximate the channel region.
Inventors
- 👤 Monte Manning
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 17:55
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/025; H10D30/031; H10D30/0321; H10D30/60; H10D30/63
Claims Analysis
Total Claims: 35
Claim 1
Independent Claim
48 words
A thin film transistor comprising: a thin film transistor layer having a source region, a channel region and a drain region; and a gate in lateral proximity to the thin film channel region, the gate comprising an annulus which laterally encircles the laterally proximate thin film channel region.
Claim 2
Dependent Claim
48 words
A thin film transistor comprising: a thin film transistor layer having a source region, a channel region and a drain region; and a gate in lateral proximity to the thin film channel region, the gate comprising an annulus which laterally encircles the laterally proximate thin film channel region.
Claim 3
Dependent Claim
14 words
The thin film transistor of claim 1 wherein the gate annulus is longitudinally elongated.
Claim 4
Dependent Claim
39 words
The thin film transistor of claim 1 wherein at least one of the source region or the drain region is elongated and the channel region is elongated, the channel region being oriented substantially perpendicularly relative to the one region.
Claim 5
Dependent Claim
40 words
The thin film transistor of claim 1 wherein the source region and the drain region are elongated and oriented parallel relative to one another, the channel region being elongated and oriented substantially perpendicularly relative to the source and drain regions.
Claim 6
Dependent Claim
33 words
The thin film transistor of claim 1 wherein the thin film transistor is provided relative to a supporting substrate, the gate annulus being longitudinally elongated and oriented substantially perpendicularly relative to the substrate.
Claim 7
Dependent Claim
47 words
A thin film transistor comprising: a thin film transistor layer having a source region, a channel region and a drain region; the thin film channel region comprising an annulus of the thin film transistor layer; and a gate in lateral proximity to the thin film channel annulus.
Claim 8
Dependent Claim
47 words
A thin film transistor comprising: a thin film transistor layer having a source region, a channel region and a drain region; the thin film channel region comprising an annulus of the thin film transistor layer; and a gate in lateral proximity to the thin film channel annulus.
Claim 9
Dependent Claim
14 words
The thin film transistor of claim 6 wherein the channel annulus is longitudinally elongated.
Claim 10
Dependent Claim
39 words
The thin film transistor of claim 6 wherein at least one of the source region or the drain region is elongated and the channel region is elongated, the channel region being oriented substantially perpendicularly relative to the one region.
Claim 11
Dependent Claim
36 words
The thin film transistor of claim 6 wherein the source region and the drain region are oriented parallel relative to one another, the channel region being oriented substantially perpendicularly relative to the source and drain regions.
Claim 12
Dependent Claim
33 words
The thin film transistor of claim 6 wherein the thin film transistor is provided relative to a supporting substrate, the channel annulus being longitudinally elongated and oriented substantially perpendicularly relative to the substrate.
Claim 13
Dependent Claim
114 words
A thin film transistor comprising: a thin film transistor layer having a source region, a channel region and a drain region; the thin film channel region comprising an annulus having a central axis, an inner sidewall spaced laterally outwardly of the central axis and an outer sidewall spaced laterally outwardly of the inner sidewall; and a gate in proximity to the thin film channel annulus, the gate comprising an annulus disposed laterally proximate the outer sidewall of the channel region annulus and concentric with and surrounding a substantial portion of the thin film channel region annulus, said portion of the thin film channel region annulus being disposed between the central axis and the gate.
Claim 14
Dependent Claim
114 words
A thin film transistor comprising: a thin film transistor layer having a source region, a channel region and a drain region; the thin film channel region comprising an annulus having a central axis, an inner sidewall spaced laterally outwardly of the central axis and an outer sidewall spaced laterally outwardly of the inner sidewall; and a gate in proximity to the thin film channel annulus, the gate comprising an annulus disposed laterally proximate the outer sidewall of the channel region annulus and concentric with and surrounding a substantial portion of the thin film channel region annulus, said portion of the thin film channel region annulus being disposed between the central axis and the gate.
Claim 15
Dependent Claim
18 words
The thin film transistor of claim 11 wherein the channel annulus and the gate annulus are longitudinally elongated.
Claim 16
Dependent Claim
39 words
The thin film transistor of claim 11 wherein at least one of the source region or the drain region is elongated and the channel region is elongated, the channel region being oriented substantially perpendicularly relative to the one region.
Claim 17
Dependent Claim
36 words
The thin film transistor of claim 11 wherein the source region and the drain region are oriented parallel relative to one another, the channel region being oriented substantially perpendicularly relative to the source and drain regions.
Claim 18
Dependent Claim
37 words
The thin film transistor of claim 11 wherein the thin film transistor is provided relative to a supporting substrate, the channel annulus and the gate annulus being longitudinally elongated and oriented substantially perpendicularly relative to the substrate.
Claim 19
Dependent Claim
124 words
A thin film transistor comprising: a base layer having a locally substantially planar outer surface; a thin film transistor layer provided outwardly of the base layer outer surface; the thin film layer having a source region, a channel region and a drain region; at least one of the thin film source region or the thin film drain region being elongated and oriented substantially parallel with the base layer outer surface; the thin film channel region consisting essentially of a region elongated in a direction substantially perpendicular to the base layer outer surface; and a gate in proximity to the thin film channel region, the gate being elongated in a direction substantially perpendicular to the base layer outer surface along the thin film channel region.
Claim 20
Dependent Claim
124 words
A thin film transistor comprising: a base layer having a locally substantially planar outer surface; a thin film transistor layer provided outwardly of the base layer outer surface; the thin film layer having a source region, a channel region and a drain region; at least one of the thin film source region or the thin film drain region being elongated and oriented substantially parallel with the base layer outer surface; the thin film channel region consisting essentially of a region elongated in a direction substantially perpendicular to the base layer outer surface; and a gate in proximity to the thin film channel region, the gate being elongated in a direction substantially perpendicular to the base layer outer surface along the thin film channel region.
Claim 21
Dependent Claim
55 words
A thin film transistor comprising: a substrate; a channel region over the substrate extending elevationally away therefrom; a source region and a drain region both of which being operatively associated with the channel region and elevationally spaced therealong and apart from one another; and a gate over the substrate and laterally proximate the channel region.
Claim 22
Dependent Claim
55 words
A thin film transistor comprising: a substrate; a channel region over the substrate extending elevationally away therefrom; a source region and a drain region both of which being operatively associated with the channel region and elevationally spaced therealong and apart from one another; and a gate over the substrate and laterally proximate the channel region.
Claim 23
Dependent Claim
32 words
The thin film transistor of claim 17, wherein the source region and the drain region are provided in different elevational planes, the gate being disposed elevationally between the source and drain regions.
Claim 24
Dependent Claim
35 words
The thin film transistor of claim 17, wherein the source region and the drain region are provided in different elevational planes, the gate being disposed substantially entirely elevationally between the source and the drain regions.
Claim 25
Dependent Claim
28 words
The thin film transistor of claim 17, wherein the channel region has a continuous outer surface area which overlies the substrate and which is surrounded by the gate.
Claim 26
Dependent Claim
53 words
The thin film transistor of claim 17, wherein the source region and the drain region are provided in different elevational planes, the gate being disposed elevationally between the source and drain regions, and the channel region has a continuous outer surface area which overlies the substrate and which is surrounded by the gate.
Claim 27
Dependent Claim
56 words
The thin film transistor of claim 17, wherein the source region and the drain region are provided in different elevational planes, the gate being disposed substantially entirely elevationally between the source and the drain regions, and the channel region has a continuous outer surface area which overlies the substrate and which is surrounded by the gate.
Claim 28
Dependent Claim
18 words
The thin film transistor of claim 17, wherein the gate is disposed laterally outwardly of the channel region.
Claim 29
Dependent Claim
39 words
The thin film transistor of claim 17, wherein the source region and the drain region are provided in different elevational planes, the gate being disposed elevationally between the source and drain regions and laterally outwardly of the channel region.
Claim 30
Dependent Claim
42 words
The thin film transistor of claim 17, wherein the source region and the drain region are provided in different elevational planes, the gate being disposed substantially entirely elevationally between the source and the drain regions and laterally outwardly of the channel region.
Claim 31
Dependent Claim
39 words
The thin film transistor of claim 17, wherein the channel region has a continuous outer surface area which overlies the substrate and which is surrounded by the gate, and the gate is disposed laterally outwardly of the channel region.
Claim 32
Dependent Claim
64 words
The thin film transistor of claim 17, wherein the source region and the drain region are provided in different elevational planes, the gate being disposed elevationally between the source and the drain regions, the channel region has a continuous outer surface area which overlies the substrate and which is surrounded by the gate, and the gate is disposed laterally outwardly of the channel region.
Claim 33
Dependent Claim
66 words
The thin film transistor of claim 17, wherein the source region and the drain region are provided in different elevational planes, the gate being disposed substantially entirely elevationally between the source and the drain regions, the channel region has a continuous outer surface area which overlies the substrate and which is surrounded by the gate, and the gate is disposed laterally outwardly of the channel region.
Claim 34
Dependent Claim
122 words
A thin film transistor comprising: a base layer having a locally substantially planar outer surface; a thin film transistor layer provided outwardly of the base layer outer surface; the thin film layer having a source region, a channel region and a drain region; at least one of the thin film source region or the thin film drain region being elongated and oriented substantially parallel with the base layer outer surface; the thin film channel region comprising a region elongated in a direction substantially perpendicular to the base layer outer surface; and a gate in proximity to the thin film channel region, the gate being elongated in a direction substantially perpendicular to the base layer outer surface along the thin film channel region.
Claim 35
Dependent Claim
122 words
A thin film transistor comprising: a base layer having a locally substantially planar outer surface; a thin film transistor layer provided outwardly of the base layer outer surface; the thin film layer having a source region, a channel region and a drain region; at least one of the thin film source region or the thin film drain region being elongated and oriented substantially parallel with the base layer outer surface; the thin film channel region comprising a region elongated in a direction substantially perpendicular to the base layer outer surface; and a gate in proximity to the thin film channel region, the gate being elongated in a direction substantially perpendicular to the base layer outer surface along the thin film channel region.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-09-07 | 2002-03-09 | 2002-09-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-09-07 | 2006-03-09 | 2006-09-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-09-07 | 2010-03-09 | 2010-09-08 | $7700.00 | Window Closed / Lapsed |