US5804470A
Expired / Lapsed
US
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Method of making a selective epitaxial growth circuit load element
Assignee: GlobalFoundries Inc
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Filing: 1996-10-23
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Granted: 1998-09-08
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Expires: 2016-10-23
Abstract
Abstract A method of manufacturing a polysilicon plug in an integrated circuit semiconductor device wherein the polysilicon plug is selectively doped to act as a resistive load or alternatively to act as a diode load. The polysilicon load can be used in an SRAM memory cell.
Inventors
- 👤 Donald L. Wollesen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 05:24
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/47; H10B; H10B10/00; H10B10/15; H10W; H10W20/00; H10W20/01; H10W20/031
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
112 words
A method of manufacturing a selective epitaxial growth circuit load element in an integrated semiconductor device, the method comprising: forming a dielectric layer over the semiconductor device; forming an opening in the dielectric layer over a region of the semiconductor device; forming a layer of a silicon material over the dielectric layer wherein the opening in the dielectric layer is filled with the silicon material forming a plug; annealing the semiconductor device forming solid phase epitaxial silicon in the plug; doping the plug with a dopant of a first type; and doping the plug with a dopant of a second type, wherein a reverse biased junction diode is formed in the plug.
Claim 2
Independent Claim
112 words
A method of manufacturing a selective epitaxial growth circuit load element in an integrated semiconductor device, the method comprising: forming a dielectric layer over the semiconductor device; forming an opening in the dielectric layer over a region of the semiconductor device; forming a layer of a silicon material over the dielectric layer wherein the opening in the dielectric layer is filled with the silicon material forming a plug; annealing the semiconductor device forming solid phase epitaxial silicon in the plug; doping the plug with a dopant of a first type; and doping the plug with a dopant of a second type, wherein a reverse biased junction diode is formed in the plug.
Claim 3
Dependent Claim
51 words
The method of claim 1 wherein the dopant of a first type is a p type dopant and the dopant of a second type is an n type dopant forming said reverse biased junction diode in the plug for a positive supply voltage and an n channel integrated circuit semiconductor device.
Claim 4
Dependent Claim
16 words
The method of claim 2 wherein the silicon material formed over the dielectric layer is polysilicon.
Claim 5
Dependent Claim
17 words
The method of claim 2 wherein the silicon material formed over the dielectric layer is amorphous silicon.
Claim 6
Dependent Claim
33 words
The method of claim 3 wherein the step of doping the plug with a dopant of a first type is at a concentration such that the plug is depleted at power supply voltage.
Claim 7
Dependent Claim
40 words
The method of claim 3 wherein the step of doping the plug with a dopant of a first type is at a concentration such that the diode junction in the plug is at a zener regime of approximately 6 volts.
Claim 8
Dependent Claim
21 words
The method of claim 3 wherein the plug is doped with a material to increase reverse leakage of the diode junction.
Claim 9
Dependent Claim
21 words
The method of claim 7 wherein the plug is doped with oxygen to increase the reverse leakage of the diode junction.
Claim 10
Dependent Claim
38 words
The method of claim 1 wherein the step of annealing the semiconductor device is such that the plug is not fully annealed leaving a portion of the plug polycrystalline wherein reverse leakage of the diode junction is increased.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-09-07 | 2002-03-09 | 2002-09-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-09-07 | 2006-03-09 | 2006-09-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-09-07 | 2010-03-09 | 2010-09-08 | $7700.00 | Window Closed / Lapsed |