Semiconductor thin film sensor device with (110) plane
Abstract
Abstract A semiconductor thin film sensor device including a semiconductor body formed of silicon having a (110) plane; a depression formed by an anisotropic etch applied to a first surface of the semiconductor body, wherein the first surface is substantially parallel to the (110) plane; and a thin film insulation member having a predetermined configuration suspended over the depression, and having substantially opposing ends connected to the first surface of the semiconductor body so that the thin film insulation member is bridged across the depression. Preferably, the depth of the depression is over 200 μm. In one embodiment, the predetermined configuration of the thin film insulation member is oriented substantially parallel to a <100> direction of the semiconductor body.
Inventors
- 👤 Morimasa Kaminishi
- 👤 Takayuki Yamaguchi
- 👤 Yukito Satoh
Bibliographic Details
Claims Analysis
Total Claims: 11References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-08-10 | 2002-02-09 | 2002-08-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-08-10 | 2006-02-09 | 2006-08-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-08-10 | 2010-02-09 | 2010-08-11 | $7700.00 | Window Closed / Lapsed |