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US5793073A Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconductor thin film sensor device with (110) plane

Assignee: Ricoh Co Ltd
•
Filing: 1996-03-01
•
Granted: 1998-08-11
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Expires: 2016-03-01
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Abstract

Abstract A semiconductor thin film sensor device including a semiconductor body formed of silicon having a (110) plane; a depression formed by an anisotropic etch applied to a first surface of the semiconductor body, wherein the first surface is substantially parallel to the (110) plane; and a thin film insulation member having a predetermined configuration suspended over the depression, and having substantially opposing ends connected to the first surface of the semiconductor body so that the thin film insulation member is bridged across the depression. Preferably, the depth of the depression is over 200 μm. In one embodiment, the predetermined configuration of the thin film insulation member is oriented substantially parallel to a <100> direction of the semiconductor body.

Inventors

  • 👤 Morimasa Kaminishi
  • 👤 Takayuki Yamaguchi
  • 👤 Yukito Satoh

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-03 21:21
CPC Classifications
G; G01; G01N; G01N27/00; G01N27/02; G01N27/04; G01N27/14; G01N27/18; G01F; G01F1/00; G01F1/68; G01F1/684; G01F1/6845

Claims Analysis

Total Claims: 11
Claim 1
Independent Claim 80 words
A semiconductor device comprising: a semiconductor body comprising silicon having a (110) plane; a depression formed by an anisotropic etch applied to a first surface of the semiconductor body, wherein the first surface is substantially parallel to the (110) plane; and a thin film insulation member having a predetermined configuration suspended over the depression, and having substantially opposing ends connected to the first surface of the semiconductor body so that said thin film insulation member is bridged across the depression.
Claim 2
Dependent Claim 80 words
A semiconductor device comprising: a semiconductor body comprising silicon having a (110) plane; a depression formed by an anisotropic etch applied to a first surface of the semiconductor body, wherein the first surface is substantially parallel to the (110) plane; and a thin film insulation member having a predetermined configuration suspended over the depression, and having substantially opposing ends connected to the first surface of the semiconductor body so that said thin film insulation member is bridged across the depression.
Claim 3
Dependent Claim 17 words
A semiconductor device according to claim 1, wherein a depth of the depression is over 200 μm.
Claim 4
Dependent Claim 29 words
A semiconductor device according to claim 1, wherein the predetermined configuration of the thin film insulation member is oriented substantially parallel to a <100> direction of the semiconductor body.
Claim 5
Dependent Claim 17 words
A semiconductor device according to claim 3, wherein a depth of the depression is over 200 μm.
Claim 6
Dependent Claim 29 words
A semiconductor device according to claim 1, wherein the predetermined configuration of the thin film insulation member is oriented substantially parallel to a <111> direction of the semiconductor body.
Claim 7
Dependent Claim 17 words
A semiconductor device according to claim 5, wherein a depth of the depression is over 200 μm.
Claim 8
Dependent Claim 25 words
A semiconductor device according to claim 1, wherein the predetermined configuration is oriented at an angle to a <100> direction, the angle being under 35.26°.
Claim 9
Dependent Claim 17 words
A semiconductor device according to claim 7, wherein a depth of the depression is over 200 μm.
Claim 10
Dependent Claim 31 words
A semiconductor device according to claim 1, wherein the predetermined configuration of the thin film insulation member is oriented at an angle to a <111> direction, the angle being under 19.47°.
Claim 11
Dependent Claim 17 words
A semiconductor device according to claim 9, wherein a depth of the depression is over 200 μm.

References Cited (Backward Citations)

US4478077A Cited
US4682503A Cited
US4975390A Cited
JPH01239882A Cited
US5155061A Cited
US5594171A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2001-08-10 2002-02-09 2002-08-11 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2005-08-10 2006-02-09 2006-08-11 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2009-08-10 2010-02-09 2010-08-11 $7700.00 Window Closed / Lapsed

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