Image display device having adjacent pixel overlapping circuit elements

Claim 2

An image display device comprising: a number of pixels for displaying an image; and first and second type circuit elements for driving each pixel, wherein said pixels are arranged in a two-dimensional matrix on a substrate, said circuit elements are monolithically formed on said substrate, said circuit elements in adjacent pixels are positioned close to each other in peripheral sections of said pixels, and the first type circuit element corresponding to each pixel overlaps an adjacent pixel in a border region including the peripheral sections of adjacent pixels.

Claim 3

The image display device according to claim 1, wherein said first and second type circuit elements are arranged substantially symmetrically with respect to a line between said pixels perpendicular to the border region.

Claim 4

The image display device according to claim 1, wherein at least portions of said first and second type circuit elements are arranged substantially symmetrically with respect to a point on a line between said pixels perpendicular to the border region.

Claim 5

The image display device according to claim 1, further comprising: a positive power source line, and a negative power source line, wherein said circuit elements for each pixel include at least one p-channel transistor and one n-channel transistor, wherein the negative power source line is provided along a line between said pixels perpendicular to the border region, and wherein adjacent pixels share the negative power supply wiring.

Claim 6

The image display device according to claim 1, wherein one electrode of plural electrodes in each of said pixels for displaying an image is a reflective electrode with a light reflecting property, and said circuit elements are disposed on a back surface of said reflective electrode through an insulating layer so that at least a part of said circuit elements overlaps an area of said adjacent pixel.

Claim 7

The image display device according to claim 1, wherein said image display device is a reflection type image display device.

Claim 8

The image display device according to claim 1, wherein said substrate is formed of a semiconducting material having a first polarity and includes a diffusion layer having a second polarity opposite the first polarity, said diffusion layer being formed in the border region, each of said circuit elements includes a p-channel transistor and an n-channel transistor for driving said pixel, and said transistors located adjacent to each other use a common diffusion layer.

Claim 9

The image display device according to claim 7, wherein said diffusion layer overlaps an area of the adjacent pixel.

Claim 10

The image display device according to claim 1, wherein each of said circuit elements includes a transistor for driving said pixel, and said transistors located adjacent to each other include a common anodic oxide film.

Claim 11

The image display device according to claim 9, wherein said transistor is formed with polycrystalline silicon.

Claim 12

The image display device according to claim 9, wherein said anodic oxide film overlaps an area of the adjacent pixel.

Claim 13

The image display device according to claim 1, wherein each of said circuit elements includes a capacitor, and wherein said capacitors located adjacent to each other have an common electrode.

Claim 14

The image display device according to claim 12, wherein said substrate is formed with a semiconducting material, and said common electrode of said capacitors is a diffusion layer.

Claim 15

The image display device according to claim 13, wherein said diffusion layer overlaps an area of the adjacent pixel.

Claim 16

The image display device of claim 1, wherein the first type circuit elements of adjacent pixels are arranged in a line in the border region.

Claim 17

The image display device of claim 1, wherein the substrate is a semiconductor having a first polarity, the substrate further including a diffusion layer having a second polarity opposite the first polarity formed in the semiconductor substrate and in the border region, and wherein the circuit elements include p-channel transistors, n-channel transistors, and capacitors.

Claim 18

An image display device comprising: a number of pixels for displaying an image; and first and second type circuit elements for driving each pixel, wherein said pixels are arranged in a two-dimensional matrix on a substrate, said circuit elements are monolithically formed on said substrate, said circuit elements in adjacent pixels are positioned close to each other in peripheral sections of said pixels, and wherein one electrode of plural electrodes in each of said pixels for displaying an image is a reflective electrode with a light reflecting property, and said circuit elements are disposed on a back surface of said reflective electrode through an insulating layer so that at least a part of said circuit elements overlaps an area of said adjacent pixel; a first line formed of a first conducting material for driving said circuit elements; a shield electrode formed of a second conducting material; reflective electrodes formed of a third conducting material; a first insulating layer for separating said circuit elements and said shield electrode; and a second insulating layer for separating said shield electrode and said reflective electrodes, wherein said first line, said shield electrode, and said reflective electrodes are laminated in this order on said substrate from a back surface toward a front surface, and said shield electrode covers said circuit elements and said first line through said first insulating layer, is connected to said first line, and covers said reflective electrodes and portions between said reflective electrodes through said second insulating layer.

Claim 19

An image display device comprising: a number of pixels for displaying an image; and first and second type circuit elements for driving each pixel, wherein said pixels are arranged in a two-dimensional matrix on a substrate, said circuit elements are monolithically formed on said substrate, said circuit elements in adjacent pixels are positioned close to each other in peripheral sections of said pixels, and wherein one electrode of plural electrodes in each of said pixels for displaying an image is a reflective electrode with a light reflecting property, and said circuit elements are disposed on a back surface of said reflective electrode through an insulating layer so that at least a part of said circuit elements overlaps an area of said adjacent pixel; a first line formed of a first conducting material for driving said circuit elements; a shield electrode formed of a second conducting material; reflective electrodes formed of a third conducting material; a first insulating layer for separating said circuit elements and said shield electrode; and a second insulating layer for separating said shield electrode and said reflective electrodes, wherein said first line, said shield electrode, and said reflective electrodes are laminated in this order on said substrate from a back surface toward a front surface, and said shield electrode covers said circuit elements and said first line through said first insulating layer, is connected to said first line, and covers said reflective electrodes and portions between said reflective electrodes through said second insulating layer.

Claim 20

The image display device according to claim 17, wherein a dielectric constant of said first insulating layer is smaller than a dielectric constant of said second insulating layer.

Claim 21

The image display device according to claim 17, wherein a thickness of said first insulating layer is larger than a thickness of said second insulating layer.

Claim 22

The image display device according to claim 17, further comprising a second wiring layer for driving said circuit elements, wherein said second wiring layer is formed of said second conducting material on said substrate, and said second wiring layer and said shield electrode are formed as one layer on said substrate.