Patent US5789311A successfully refreshed from Google Patents.
US5789311A
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Manufacturing method of SiC Schottky diode
Assignee: Fuji Electric Co Ltd
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Filing: 1995-06-02
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Granted: 1998-08-04
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Expires: 2015-06-02
Abstract
Abstract A Schottky electrode is formed on an n-type SiC base member with an Al--Ti alloy or by laying Al films and Ti films alternately, and a resulting structure is subjected to a heat treatment of 600° C. to 1,200° C. A p-type SiC layer may be formed around the Schottky junction so as to form a p-n junction with the n-type SiC base member.
Inventors
- 👤 Katsunori Ueno
- 👤 Tatsuo Urushidani
- 👤 Koichi Hashimoto
- 👤 Shinji Ogino
- 👤 Yasukazu Seki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 19:37
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/832; H10D62/8325; H10D64/00; H10D64/60; H10D64/64; H10D8/00; H10D8/01; H10D8/051; H10D8/60
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
57 words
A method of manufacturing a SiC Schottky diode, comprising the steps of: depositing an electrode layer including aluminum and titanium directly on an n-type SiC semiconductor base member; and subjecting the SiC semiconductor base member having the electrode layer deposited thereon to a heat treatment of 600° C. to 1,200° C., to thereby form a Schottky electrode.
Claim 2
Independent Claim
57 words
A method of manufacturing a SiC Schottky diode, comprising the steps of: depositing an electrode layer including aluminum and titanium directly on an n-type SiC semiconductor base member; and subjecting the SiC semiconductor base member having the electrode layer deposited thereon to a heat treatment of 600° C. to 1,200° C., to thereby form a Schottky electrode.
Claim 3
Dependent Claim
14 words
The manufacturing method of claim 1, wherein the electrode layer includes an aluminum-titanium alloy.
Claim 4
Dependent Claim
20 words
The manufacturing method of claim 1, wherein the electrode layer includes aluminum films and titanium films that a laid alternately.
Claim 5
Dependent Claim
72 words
The manufacturing method of claim 1, further comprising the steps of: forming a p-type SiC layer on the n-type SiC base member; forming an opening in the p-type SiC layer to produce an exposed surface of the n-type SiC base member; and forming a Schottky electrode so as to contact with the exposed surface of the n-type SiC base member and cover a portion of the p-type SiC layer surrounding the opening.
Claim 6
Dependent Claim
32 words
The manufacturing method of claim 1, further comprising the step of forming, with nickel, an ohmic contact electrode on the n-type SiC base member on a side opposite to the Schottky electrode.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-08-03 | 2002-02-02 | 2002-08-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-08-03 | 2006-02-02 | 2006-08-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-08-03 | 2010-02-02 | 2010-08-04 | $7700.00 | Window Closed / Lapsed |