US5789311A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Manufacturing method of SiC Schottky diode
Assignee: Fuji Electric Co Ltd
•
Filing: 1995-06-02
•
Granted: 1998-08-04
•
Expires: 2015-06-02
Abstract
Abstract A Schottky electrode is formed on an n-type SiC base member with an Al--Ti alloy or by laying Al films and Ti films alternately, and a resulting structure is subjected to a heat treatment of 600° C. to 1,200° C. A p-type SiC layer may be formed around the Schottky junction so as to form a p-n junction with the n-type SiC base member.
Inventors
- 👤 Katsunori Ueno
- 👤 Tatsuo Urushidani
- 👤 Koichi Hashimoto
- 👤 Shinji Ogino
- 👤 Yasukazu Seki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 19:26
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/832; H10D62/8325; H10D64/00; H10D64/60; H10D64/64; H10D8/00; H10D8/01; H10D8/051; H10D8/60
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
57 words
A method of manufacturing a SiC Schottky diode, comprising the steps of: depositing an electrode layer including aluminum and titanium directly on an n-type SiC semiconductor base member; and subjecting the SiC semiconductor base member having the electrode layer deposited thereon to a heat treatment of 600° C. to 1,200° C., to thereby form a Schottky electrode.
Claim 2
Independent Claim
57 words
A method of manufacturing a SiC Schottky diode, comprising the steps of: depositing an electrode layer including aluminum and titanium directly on an n-type SiC semiconductor base member; and subjecting the SiC semiconductor base member having the electrode layer deposited thereon to a heat treatment of 600° C. to 1,200° C., to thereby form a Schottky electrode.
Claim 3
Dependent Claim
14 words
The manufacturing method of claim 1, wherein the electrode layer includes an aluminum-titanium alloy.
Claim 4
Dependent Claim
20 words
The manufacturing method of claim 1, wherein the electrode layer includes aluminum films and titanium films that a laid alternately.
Claim 5
Dependent Claim
72 words
The manufacturing method of claim 1, further comprising the steps of: forming a p-type SiC layer on the n-type SiC base member; forming an opening in the p-type SiC layer to produce an exposed surface of the n-type SiC base member; and forming a Schottky electrode so as to contact with the exposed surface of the n-type SiC base member and cover a portion of the p-type SiC layer surrounding the opening.
Claim 6
Dependent Claim
32 words
The manufacturing method of claim 1, further comprising the step of forming, with nickel, an ohmic contact electrode on the n-type SiC base member on a side opposite to the Schottky electrode.
References Cited (Backward Citations)
US4990994A
Cited
US5045497A
Cited
JPH01161760A
Cited
US5270252A
Cited
US5124779A
Cited
JPH04317374A
Cited
JPH0548145A
Cited
US5221638A
Cited
JPH05335348A
Cited
US5389799A
Cited
JPH0669428A
Cited
US5270534A
Cited
US5397717A
Cited
US5502003A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-08-03 | 2002-02-02 | 2002-08-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-08-03 | 2006-02-02 | 2006-08-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-08-03 | 2010-02-02 | 2010-08-04 | $7700.00 | Window Closed / Lapsed |