Patent US5789284A successfully refreshed from Google Patents.
US5789284A
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Method for fabricating semiconductor thin film
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1995-09-29
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Granted: 1998-08-04
•
Expires: 2015-09-29
Abstract
Abstract An object of the present invention is to provide a technology of reducing a nickel element in the silicon film which is crystallized by using nickel. An extremely small amount of nickel is introduced into an amorphous silicon film which is formed on the glass substrate. Then this amorphous silicon film is crystallized by heating. At this time, the nickel element remains in the crystallized silicon film. Then an amorphous silicon film is formed on the surface of the silicon film crystallized with the action of nickel. Then the amorphous silicon film is further heat treated. By carrying out this heat treatment, the nickel element is dispersed from the crystallized silicon film into the amorphous silicon film with the result that the nickel density in the crystallized silicon film is lowered.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Hisashi Ohtani
- 👤 Akiharu Miyanaga
- 👤 Satoshi Teramoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 15:51
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2922; C; C03; C03C; C03C17/00; C03C17/34; C03C17/3411; C03C17/3429; C03C17/3482; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6731; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3238; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/38; H10P14/3802; H10P14/3806; H10P14/3808; C03C2218/00; C03C2218/10; C03C2218/15; C03C2218/152; C03C2218/153
Claims Analysis
Total Claims: 78
Claim 1
Independent Claim
83 words
A method for fabricating a semiconductor thin film comprising the steps of: providing an amorphous semiconductor film with a metal element which promotes crystallization of said semiconductor film; crystallizing said amorphous semiconductor film by heat treatment to obtain a crystalline semiconductor film; forming a metal element diffusion film comprising a semiconductor in contact with said crystalline semiconductor film; diffusing said metal element into said metal element diffusion film; and removing said metal element diffusion film into which said metal element has been diffused.
Claim 2
Independent Claim
83 words
A method for fabricating a semiconductor thin film comprising the steps of: providing an amorphous semiconductor film with a metal element which promotes crystallization of said semiconductor film; crystallizing said amorphous semiconductor film by heat treatment to obtain a crystalline semiconductor film; forming a metal element diffusion film comprising a semiconductor in contact with said crystalline semiconductor film; diffusing said metal element into said metal element diffusion film; and removing said metal element diffusion film into which said metal element has been diffused.
Claim 3
Dependent Claim
16 words
The method of claim 1 wherein said metal element diffusion film is an amorphous silicon film.
Claim 4
Dependent Claim
16 words
The method of claim 1 wherein said metal element diffusion film is a polycrystalline silicon film.
Claim 5
Dependent Claim
22 words
The method of claim 1 wherein said metal element diffusion film is an amorphous Si x Ge 1-x , film where 0<x<1.
Claim 6
Dependent Claim
36 words
The method of claim 1 wherein one or a plurality of elements selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au are used as said metal element.
Claim 7
Independent Claim
101 words
A method for fabricating a semiconductor thin film comprising the steps of: providing an amorphous semiconductor film with a metal element which promotes crystallization of said semiconductor film; crystallizing said amorphous semiconductor film by heat treatment to obtain a crystalline semiconductor film; forming an oxide film in contact with said crystalline semiconductor film; forming a metal element diffusion film comprising a semiconductor in contact with said oxide film; diffusing said metal element into said metal element diffusion film; and removing said metal element diffusion film into which said metal element has been diffused, using said oxide film as an etching stopper.
Claim 8
Independent Claim
101 words
A method for fabricating a semiconductor thin film comprising the steps of: providing an amorphous semiconductor film with a metal element which promotes crystallization of said semiconductor film; crystallizing said amorphous semiconductor film by heat treatment to obtain a crystalline semiconductor film; forming an oxide film in contact with said crystalline semiconductor film; forming a metal element diffusion film comprising a semiconductor in contact with said oxide film; diffusing said metal element into said metal element diffusion film; and removing said metal element diffusion film into which said metal element has been diffused, using said oxide film as an etching stopper.
Claim 9
Dependent Claim
16 words
The method of claim 6 wherein said metal element diffusion film is an amorphous silicon film.
Claim 10
Dependent Claim
16 words
The method of claim 6 wherein said metal element diffusion film is a polycrystalline silicon film.
Claim 11
Dependent Claim
21 words
The method of claim 6 wherein said metal element diffusion film is an amorphous Si x Ge 1-x film where 0<x<1.
Claim 12
Dependent Claim
36 words
The method of claim 6 wherein one or a plurality of elements selected from the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au are used as said metal element.
Claim 13
Independent Claim
81 words
A method for fabricating a semiconductor thin film comprising the steps of: providing an amorphous semiconductor film with a metal element which promotes crystallization of said semiconductor film; obtaining a crystalline semiconductor film by crystallizing said amorphous semiconductor film by heat treatment; forming an amorphous semiconductor film in contact with said crystalline semiconductor film; heat treating said amorphous semiconductor film formed in contact with said crystalline semiconductor film; and removing the semiconductor film formed in contact with said crystalline semiconductor film.
Claim 14
Independent Claim
81 words
A method for fabricating a semiconductor thin film comprising the steps of: providing an amorphous semiconductor film with a metal element which promotes crystallization of said semiconductor film; obtaining a crystalline semiconductor film by crystallizing said amorphous semiconductor film by heat treatment; forming an amorphous semiconductor film in contact with said crystalline semiconductor film; heat treating said amorphous semiconductor film formed in contact with said crystalline semiconductor film; and removing the semiconductor film formed in contact with said crystalline semiconductor film.
Claim 15
Dependent Claim
35 words
The method of claim 11 wherein at least one kind of elements selected from Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu and Au is used as the metal element promoting the crystallization.
Claim 16
Dependent Claim
29 words
The method of claim 11 wherein the thickness of the amorphous silicon film formed on the crystalline silicon film is thicker than the thickness of said crystalline silicon film.
Claim 17
Independent Claim
107 words
A method for fabricating a semiconductor thin film comprising the steps of: providing an amorphous silicon film with a metal element which promotes crystallization of said silicon film; obtaining a crystalline silicon film by crystallizing said amorphous silicon film by heat treatment; forming an oxide film in contact with said crystalline silicon film; forming an amorphous semiconductor film in contact with said oxide film; dispersing by heat treatment the metal element in said crystalline silicon film into the amorphous semiconductor film formed in contact with said oxide film; and removing the silicon film formed on said oxide film by using said oxide film as an etching stopper.
Claim 18
Independent Claim
107 words
A method for fabricating a semiconductor thin film comprising the steps of: providing an amorphous silicon film with a metal element which promotes crystallization of said silicon film; obtaining a crystalline silicon film by crystallizing said amorphous silicon film by heat treatment; forming an oxide film in contact with said crystalline silicon film; forming an amorphous semiconductor film in contact with said oxide film; dispersing by heat treatment the metal element in said crystalline silicon film into the amorphous semiconductor film formed in contact with said oxide film; and removing the silicon film formed on said oxide film by using said oxide film as an etching stopper.
Claim 19
Dependent Claim
35 words
The method of claim 14 wherein at least one kind of elements selected from Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu and Au is used as the metal element promoting the crystallization.
Claim 20
Dependent Claim
29 words
The method of claim 14 wherein the thickness of the amorphous silicon film formed on the crystalline silicon film is thicker than the thickness of said crystalline silicon film.
Claim 21
Independent Claim
102 words
A method for fabricating a semiconductor thin film comprising the steps of: providing an amorphous silicon film with a metal element which promotes crystallization of said silicon film; obtaining a crystalline silicon film by crystallizing said amorphous silicon film by heat treatment; forming an amorphous semiconductor film in contact with said crystalline silicon film; dispersing by heat treatment the metal element in said crystalline silicon film into the amorphous semiconductor film formed in contact with said crystalline silicon film; removing the semiconductor film formed in contact with said crystalline silicon film; and heating and/or irradiating said crystalline silicon film with laser light.
Claim 22
Independent Claim
102 words
A method for fabricating a semiconductor thin film comprising the steps of: providing an amorphous silicon film with a metal element which promotes crystallization of said silicon film; obtaining a crystalline silicon film by crystallizing said amorphous silicon film by heat treatment; forming an amorphous semiconductor film in contact with said crystalline silicon film; dispersing by heat treatment the metal element in said crystalline silicon film into the amorphous semiconductor film formed in contact with said crystalline silicon film; removing the semiconductor film formed in contact with said crystalline silicon film; and heating and/or irradiating said crystalline silicon film with laser light.
Claim 23
Dependent Claim
35 words
The method of claim 17 wherein at least one kind of elements selected from Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu and Au is used as the metal element promoting the crystallization.
Claim 24
Dependent Claim
29 words
The method of claim 17 wherein the thickness of the amorphous silicon film formed on the crystalline silicon film is thicker than the thickness of said crystalline silicon film.
Claim 25
Independent Claim
86 words
A method for fabricating a semiconductor thin film comprising the steps of: providing an amorphous silicon film with a metal element which promotes crystallization of said silicon film; obtaining a crystalline silicon film by crystallizing said amorphous silicon film by heat treatment; forming an amorphous semiconductor film in contact with said crystalline silicon film; heat treating the amorphous semiconductor film at a temperature at which the amorphous semiconductor film is not crystallized; and removing the amorphous semiconductor film formed in contact with said crystalline silicon film.
Claim 26
Independent Claim
86 words
A method for fabricating a semiconductor thin film comprising the steps of: providing an amorphous silicon film with a metal element which promotes crystallization of said silicon film; obtaining a crystalline silicon film by crystallizing said amorphous silicon film by heat treatment; forming an amorphous semiconductor film in contact with said crystalline silicon film; heat treating the amorphous semiconductor film at a temperature at which the amorphous semiconductor film is not crystallized; and removing the amorphous semiconductor film formed in contact with said crystalline silicon film.
Claim 27
Dependent Claim
35 words
The method of claim 20 wherein at least one kind of elements selected from Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu and Au is used as the metal element promoting the crystallization.
Claim 28
Dependent Claim
29 words
The method of claim 20 wherein the thickness of the amorphous silicon film formed on the crystalline silicon film is thicker than the thickness of said crystalline silicon film.
Claim 29
Independent Claim
83 words
A method for fabricating a semiconductor thin film comprising the steps of: providing an amorphous silicon film with a metal element which promotes crystallization of said silicon film; obtaining a crystalline silicon film by crystallizing said amorphous silicon film by heat treatment; forming an amorphous semiconductor film in contact with said crystalline silicon film; crystallizing by heat treatment the amorphous semiconductor film formed in contact with said crystalline silicon film; and removing the semiconductor film formed in contact with said crystalline silicon film.
Claim 30
Independent Claim
83 words
A method for fabricating a semiconductor thin film comprising the steps of: providing an amorphous silicon film with a metal element which promotes crystallization of said silicon film; obtaining a crystalline silicon film by crystallizing said amorphous silicon film by heat treatment; forming an amorphous semiconductor film in contact with said crystalline silicon film; crystallizing by heat treatment the amorphous semiconductor film formed in contact with said crystalline silicon film; and removing the semiconductor film formed in contact with said crystalline silicon film.
Claim 31
Dependent Claim
35 words
The method of claim 23 wherein at least one kind of elements selected from Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu and Au is used as the metal element promoting the crystallization.
Claim 32
Dependent Claim
29 words
The method of claim 23 wherein the thickness of the amorphous silicon film formed on the crystalline silicon film is thicker than the thickness of said crystalline silicon film.
Claim 33
Independent Claim
104 words
A method for fabricating a semiconductor thin film comprising the steps of: providing an amorphous silicon film with a metal element which promotes crystallization of said silicon film; obtaining a crystalline silicon film by crystallizing said amorphous silicon film by heat treatment; forming an oxide film in contact with said crystalline silicon film; forming an amorphous semiconductor film in contact with said oxide film; crystallizing by heat treatment the amorphous semiconductor film which is formed in contact with said oxide film; and removing the semiconductor film which is formed in contact with said oxide film by using said oxide film as an etching stopper.
Claim 34
Independent Claim
104 words
A method for fabricating a semiconductor thin film comprising the steps of: providing an amorphous silicon film with a metal element which promotes crystallization of said silicon film; obtaining a crystalline silicon film by crystallizing said amorphous silicon film by heat treatment; forming an oxide film in contact with said crystalline silicon film; forming an amorphous semiconductor film in contact with said oxide film; crystallizing by heat treatment the amorphous semiconductor film which is formed in contact with said oxide film; and removing the semiconductor film which is formed in contact with said oxide film by using said oxide film as an etching stopper.
Claim 35
Dependent Claim
35 words
The method of claim 26 wherein at least one kind of elements selected from Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu and Au is used as the metal element promoting the crystallization.
Claim 36
Dependent Claim
29 words
The method of claim 26 wherein the thickness of the amorphous silicon film formed on the crystalline silicon film is thicker than the thickness of said crystalline silicon film.
Claim 37
Independent Claim
78 words
A method for fabricating a semiconductor thin film comprising the steps of: providing an amorphous silicon film with a concentration of a metal element which promotes crystallization of said silicon film; obtaining a crystalline silicon film by crystallizing said amorphous silicon film by heat treatment; forming an amorphous semiconductor film in contact with said crystalline silicon film; and reducing by heat treatment said concentration of the metal element by a half or more in said crystalline silicon film.
Claim 38
Independent Claim
78 words
A method for fabricating a semiconductor thin film comprising the steps of: providing an amorphous silicon film with a concentration of a metal element which promotes crystallization of said silicon film; obtaining a crystalline silicon film by crystallizing said amorphous silicon film by heat treatment; forming an amorphous semiconductor film in contact with said crystalline silicon film; and reducing by heat treatment said concentration of the metal element by a half or more in said crystalline silicon film.
Claim 39
Dependent Claim
35 words
The method of claim 29 wherein at least one kind of elements selected from Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu and Au is used as the metal element promoting the crystallization.
Claim 40
Dependent Claim
29 words
The method of claim 29 wherein the thickness of the amorphous silicon film formed on the crystalline silicon film is thicker than the thickness of said crystalline silicon film.
Claim 41
Independent Claim
109 words
A method for fabricating a semiconductor thin film comprising the steps of: providing an amorphous silicon film with a metal element which promotes crystallization of said silicon film; obtaining a crystalline silicon film by crystallizing said amorphous silicon film by heat treatment; forming an amorphous semiconductor film in contact with said crystalline silicon film; and heat treating the amorphous semiconductor film formed in contact with said crystalline silicon film; wherein the average defect density in said amorphous semiconductor film formed in contact with said crystalline silicon film is set to a value larger than the minimum value of a density of said metal element in said crystalline silicon film.
Claim 42
Independent Claim
109 words
A method for fabricating a semiconductor thin film comprising the steps of: providing an amorphous silicon film with a metal element which promotes crystallization of said silicon film; obtaining a crystalline silicon film by crystallizing said amorphous silicon film by heat treatment; forming an amorphous semiconductor film in contact with said crystalline silicon film; and heat treating the amorphous semiconductor film formed in contact with said crystalline silicon film; wherein the average defect density in said amorphous semiconductor film formed in contact with said crystalline silicon film is set to a value larger than the minimum value of a density of said metal element in said crystalline silicon film.
Claim 43
Dependent Claim
35 words
The method of claim 32 wherein at least one kind of elements selected from Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu and Au is used as the metal element promoting the crystallization.
Claim 44
Dependent Claim
29 words
The method of claim 32 wherein the thickness of the amorphous silicon film formed on the crystalline silicon film is thicker than the thickness of said crystalline silicon film.
Claim 45
Independent Claim
70 words
A method for fabricating a semiconductor thin film comprising the steps of: providing an amorphous silicon film with a metal element which promotes crystallization of said silicon film; crystallizing said amorphous silicon film by heat treatment to obtain a crystalline silicon film; forming a Si x Ge 1-x film in contact with said crystalline silicon film where 0<x<1; and diffusing said metal element into said Si x Ge 1-x film.
Claim 46
Independent Claim
70 words
A method for fabricating a semiconductor thin film comprising the steps of: providing an amorphous silicon film with a metal element which promotes crystallization of said silicon film; crystallizing said amorphous silicon film by heat treatment to obtain a crystalline silicon film; forming a Si x Ge 1-x film in contact with said crystalline silicon film where 0<x<1; and diffusing said metal element into said Si x Ge 1-x film.
Claim 47
Independent Claim
96 words
A method for fabricating a semiconductor thin film comprising the steps of: forming an amorphous semiconductor film on a glass substrate; providing said amorphous semiconductor film with a metal element which promotes crystallization of said semiconductor film; crystallizing said amorphous semiconductor film by said metal element to obtain a crystalline semiconductor film; forming a metal element diffusion film comprising a semiconductor in contact with said crystalline semiconductor film; and diffusing said metal element into said metal element diffusion film by heat treatment at a temperature of 400° C. to a strain point of said glass substrate.
Claim 48
Independent Claim
96 words
A method for fabricating a semiconductor thin film comprising the steps of: forming an amorphous semiconductor film on a glass substrate; providing said amorphous semiconductor film with a metal element which promotes crystallization of said semiconductor film; crystallizing said amorphous semiconductor film by said metal element to obtain a crystalline semiconductor film; forming a metal element diffusion film comprising a semiconductor in contact with said crystalline semiconductor film; and diffusing said metal element into said metal element diffusion film by heat treatment at a temperature of 400° C. to a strain point of said glass substrate.
Claim 49
Independent Claim
115 words
A method for fabricating a semiconductor thin film comprising the steps of: forming an amorphous semiconductor film on a glass substrate; providing said amorphous semiconductor film with a metal element which promotes crystallization of said semiconductor film; crystallizing said amorphous semiconductor film by said metal element to obtain a crystalline semiconductor film; forming a metal element diffusion film comprising a semiconductor in contact with said crystalline semiconductor film, said metal element diffusion film comprising an amorphous or polycrystalline semiconductor; and diffusing said metal element from said crystalline semiconductor film into said metal element diffusion film by heat treatment at a temperature of 400° C. or higher, wherein said crystalline semiconductor film constitutes an active layer.
Claim 50
Independent Claim
115 words
A method for fabricating a semiconductor thin film comprising the steps of: forming an amorphous semiconductor film on a glass substrate; providing said amorphous semiconductor film with a metal element which promotes crystallization of said semiconductor film; crystallizing said amorphous semiconductor film by said metal element to obtain a crystalline semiconductor film; forming a metal element diffusion film comprising a semiconductor in contact with said crystalline semiconductor film, said metal element diffusion film comprising an amorphous or polycrystalline semiconductor; and diffusing said metal element from said crystalline semiconductor film into said metal element diffusion film by heat treatment at a temperature of 400° C. or higher, wherein said crystalline semiconductor film constitutes an active layer.
Claim 51
Independent Claim
94 words
A method for fabricating a semiconductor thin film comprising the steps of: providing an amorphous semiconductor film with a metal element which promotes crystallization of said semiconductor film; crystallizing said amorphous semiconductor film by heat treatment to obtain a crystalline semiconductor film; forming a silicon oxide film in contact with said semiconductor film; forming a metal element diffusion film comprising a semiconductor in contact with said silicon oxide film; diffusing said metal element into said metal element diffusion film; and removing said metal element diffusion film into which said metal element has been diffused.
Claim 52
Independent Claim
94 words
A method for fabricating a semiconductor thin film comprising the steps of: providing an amorphous semiconductor film with a metal element which promotes crystallization of said semiconductor film; crystallizing said amorphous semiconductor film by heat treatment to obtain a crystalline semiconductor film; forming a silicon oxide film in contact with said semiconductor film; forming a metal element diffusion film comprising a semiconductor in contact with said silicon oxide film; diffusing said metal element into said metal element diffusion film; and removing said metal element diffusion film into which said metal element has been diffused.
Claim 53
Dependent Claim
18 words
The method of claim 1 wherein said crystalline semiconductor film comprises a crystal grown in a longitudinal direction.
Claim 54
Dependent Claim
19 words
The method of claim 1 wherein said crystalline semiconductor film comprises an active layer of a thin film transistor.
Claim 55
Dependent Claim
20 words
The method of claim 1 wherein said metal element diffusion film comprises an amorphous Si x Ge 1-x where 0<x<1.
Claim 56
Dependent Claim
18 words
The method of claim 6 wherein said crystalline semiconductor film comprises a crystal grown in a longitudinal direction.
Claim 57
Dependent Claim
19 words
The method of claim 6 wherein said crystalline semiconductor film comprises an active layer of a thin film transistor.
Claim 58
Dependent Claim
20 words
The method of claim 6 wherein said metal element diffusion film comprises an amorphous Si x Ge 1-x where 0<x<1.
Claim 59
Dependent Claim
18 words
The method of claim 11 wherein said crystalline semiconductor film comprises a crystal grown in a longitudinal direction.
Claim 60
Dependent Claim
19 words
The method of claim 11 wherein said crystalline semiconductor film comprises an active layer of a thin film transistor.
Claim 61
Dependent Claim
18 words
The method of claim 35 wherein said crystalline silicon film comprises a crystal grown in a longitudinal direction.
Claim 62
Dependent Claim
19 words
The method of claim 35 wherein said crystalline silicon film comprises an active layer of a thin film transistor.
Claim 63
Dependent Claim
18 words
The method of claim 36 wherein said crystalline semiconductor film comprises a crystal grown in a longitudinal direction.
Claim 64
Dependent Claim
19 words
The method of claim 36 wherein said crystalline semiconductor film comprises an active layer of a thin film transistor.
Claim 65
Dependent Claim
20 words
The method of claim 36 wherein said metal element diffusion film comprises an amorphous Si x Ge 1-x where 0<x<1.
Claim 66
Dependent Claim
18 words
The method of claim 37 wherein said crystalline semiconductor film comprises a crystal grown in a longitudinal direction.
Claim 67
Dependent Claim
19 words
The method of claim 37 wherein said crystalline semiconductor film comprises an active layer of a thin film transistor.
Claim 68
Dependent Claim
20 words
The method of claim 37 wherein said metal element diffusion film comprises an amorphous Si x Ge 1-x where 0<x<1.
Claim 69
Dependent Claim
18 words
The method of claim 38 wherein said crystalline semiconductor film comprises a crystal grown in a longitudinal direction.
Claim 70
Dependent Claim
19 words
The method of claim 38 wherein said crystalline semiconductor film comprises an active layer of a thin film transistor.
Claim 71
Dependent Claim
20 words
The method of claim 38 wherein said metal element diffusion film comprises an amorphous Si x Ge 1-x where 0<x<1.
Claim 72
Dependent Claim
12 words
The method of claim 11 wherein said amorphous semiconductor film comprises silicon.
Claim 73
Dependent Claim
12 words
The method of claim 14 wherein said amorphous semiconductor film comprises silicon.
Claim 74
Dependent Claim
12 words
The method of claim 17 wherein said amorphous semiconductor film comprises silicon.
Claim 75
Dependent Claim
12 words
The method of claim 20 wherein said amorphous semiconductor film comprises silicon.
Claim 76
Dependent Claim
12 words
The method of claim 26 wherein said amorphous semiconductor film comprises silicon.
Claim 77
Dependent Claim
12 words
The method of claim 29 wherein said amorphous semiconductor film comprises silicon.
Claim 78
Dependent Claim
12 words
The method of claim 32 wherein said amorphous semiconductor film comprises silicon.
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