US5229306A
Expired / Lapsed
US
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Backside gettering method employing a monocrystalline germanium-silicon layer
Assignee: Texas Instruments Inc
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Filing: 1989-12-27
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Granted: 1993-07-20
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Expires: 2009-12-27
Abstract
Abstract A method for gettering metal atoms (28) from a subsequently contaminated silicon substrate (12) is disclosed. A smoothed or polished first surface (16) has a thin germanium silicon layer (20) deposited thereon. A silicon layer (24) is deposited onto the germanium silicon layer (20) to seal the layer (20) between the substrate (12) and the silicon layer (24). Electronic components (26) are fabricated on a second surface (14) of the silicon substrate (12) which causes the metal atoms (28) to contaminate the substrate as a result of contamination in normal processing (12). As the substrate (12) is heated during normal processing of the devices, metal atoms (28) in the substrate of a result of contamination, diffuse in the substrate (12) to the misfit dislocations at the germanium-silicon (20)/silicon interface.
Inventors
- 👤 Keith J. Lindberg
- 👤 Greg Gopffarth
- 👤 Jerry D. Smith
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 12:04
CPC Classifications
H; H10; H10P; H10P95/00; H10P36/00; H10P36/03
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
74 words
A method of gettering, which comprises the steps of: depositing a sacrifical monocrystalline germanium-silicon layer onto a monocrystalline silicon substrate to create misfit dislocations at the interface; fabricating a device on the opposite surface of said substrate such that metal atoms from said fabricating of the device migrate into said substrate; and heating said substrate to induce the migration of metal atoms from said substrate to the misfit dislocations at the germanium-silicon, silicon interface.
Claim 2
Independent Claim
74 words
A method of gettering, which comprises the steps of: depositing a sacrifical monocrystalline germanium-silicon layer onto a monocrystalline silicon substrate to create misfit dislocations at the interface; fabricating a device on the opposite surface of said substrate such that metal atoms from said fabricating of the device migrate into said substrate; and heating said substrate to induce the migration of metal atoms from said substrate to the misfit dislocations at the germanium-silicon, silicon interface.
Claim 3
Dependent Claim
32 words
The method as recited in claim 1, further comprises the step of depositing a sealing layer on said germanium/silicon layer to confine said germanium/silicon layer between said substrate and said sealing layer.
Claim 4
Dependent Claim
37 words
The method as recited in claim 2, further comprising a step of removing said germanium-silicon layer and said sealing layer from said substrate after said metal molecules migrate to said misfit dislocations at the germanium silicon/silicon interface.
Claim 5
Dependent Claim
29 words
The method as recited in claim 1, wherein said step of heating said substrate increases the temperature of said substrate to between approximately 300° C. and approximately 1400° C.
Claim 6
Independent Claim
108 words
A method for gettering metal atoms fromm a contaminated monocrystalline silicon substrate, which comprises the steps of: depositing a monocrystalline germanium-silicon layer on a first surface of the substrate to create misfit dislocations at the interface; depositing a silicon layer on said germanium-silicon layer to seal said germanium-silicon layer between said silicon layer and the substrate; fabricating devices on the opposite surface of the substrate such that metal atoms contaminate the substrate which originates from contamination during normal processing; and heating the substrate to induce the migration of metal molecules from the substrate to the vicinity of said germanium-silicon layer such that the substrate is substantially metal molecule-free.
Claim 7
Independent Claim
108 words
A method for gettering metal atoms fromm a contaminated monocrystalline silicon substrate, which comprises the steps of: depositing a monocrystalline germanium-silicon layer on a first surface of the substrate to create misfit dislocations at the interface; depositing a silicon layer on said germanium-silicon layer to seal said germanium-silicon layer between said silicon layer and the substrate; fabricating devices on the opposite surface of the substrate such that metal atoms contaminate the substrate which originates from contamination during normal processing; and heating the substrate to induce the migration of metal molecules from the substrate to the vicinity of said germanium-silicon layer such that the substrate is substantially metal molecule-free.
Claim 8
Dependent Claim
23 words
The method as recited in claim 5, further comprising the step of removing said germanium-silicon layer and said silicon layer from the substrate.
Claim 9
Dependent Claim
25 words
The method as recited in claim 5, wherein said step of heating the substrate increases the temperature to between 300° C. and approximately 1400° C.
References Cited (Backward Citations)
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