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US5786254A
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US
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Hot-carrier reliability in submicron MOS devices by oxynitridation
Assignee: Advanced Micro Devices Inc
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Filing: 1997-03-19
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Granted: 1998-07-28
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Expires: 2017-03-19
Abstract
Abstract A method of manufacturing a semiconductor device with reduced hot-carrier induced degradation wherein a nitrogen species is introduced into the gate oxide layer. The introduction of the nitrogen species may be done after the gate etch, after the spacer material deposition, or after the spacer etch. The nitrogen species may also be introduced into the gate oxide after both the gate etch and the spacer material deposition or after both the gate etch and the spacer etch or after all three steps.
Inventors
- 👤 Ming-Yin Hao
- 👤 Rajat Rakkhit
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:12
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/693; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01338; Y; Y10; Y10S; Y10S257/00; Y10S257/90
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
118 words
A method of manufacturing a semiconductor device with reduced hot-carrier induced degradation, the method comprising: forming a layer of gate oxide on a surface of a semiconductor substrate; forming a layer of polysilicon on the layer of gate oxide; removing a portion of the layer of polysilicon forming a gate structure of polysilicon overlying a layer of gate oxide; removing the gate oxide layer from the surface of the semiconductor substrate not underlying the gate structure; forming a layer of a spacer material on the gate and semiconductor substrate; etching the layer of a spacer material to form sidewall spacers; introducing a nitrogen species into the gate oxide layer after the layer of spacer material has been etched.
Claim 2
Independent Claim
118 words
A method of manufacturing a semiconductor device with reduced hot-carrier induced degradation, the method comprising: forming a layer of gate oxide on a surface of a semiconductor substrate; forming a layer of polysilicon on the layer of gate oxide; removing a portion of the layer of polysilicon forming a gate structure of polysilicon overlying a layer of gate oxide; removing the gate oxide layer from the surface of the semiconductor substrate not underlying the gate structure; forming a layer of a spacer material on the gate and semiconductor substrate; etching the layer of a spacer material to form sidewall spacers; introducing a nitrogen species into the gate oxide layer after the layer of spacer material has been etched.
Claim 3
Dependent Claim
19 words
The method of claim 1, wherein introducing a nitrogen species into the gate oxide layer is accomplished by oxynitridation.
Claim 4
Dependent Claim
45 words
The method of claim 2, wherein the nitrogen species is selected from the group consisting of N 2 O, NO, a dilute N 2 O or NO ambient with inert gases, and any mixture of N 2 O, NO, O 2 or HN 3 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-07-27 | 2002-01-26 | 2002-07-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-07-27 | 2006-01-26 | 2006-07-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-07-27 | 2010-01-26 | 2010-07-28 | $7700.00 | Window Closed / Lapsed |