Patent US5780356A successfully refreshed from Google Patents.
US5780356A
Expired / Lapsed
US
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Method for forming metal wire of semiconductor device
Assignee: SK Hynix Inc
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Filing: 1996-12-13
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Granted: 1998-07-14
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Expires: 2016-12-13
Abstract
Abstract Operation of semiconductor devices suitable for high integration is achieved in a method for forming a metal wire, in which a plasma treating process is carried out to recruit a dense high-melting-point nitride film as a barrier layer. The method includes steps of providing a semiconductor substrate, forming an insulating layer having a contact hole over the semiconductor substrate, forming a high melting point metal film over exposed surfaces of the contact hole and the insulating layer, plasma treating the high melting point metal film to form a dense lower high melting point metal nitride film over the high melting point metal film, forming an upper high melting point metal nitride film over the dense lower high melting point metal nitride film in a chemical vapor deposition process, forming a tungsten layer on the upper high melting point metal nitride film within the contact hole so as to fill the contact hole, and forming a conductive metal film over the tungsten layer and the upper high melting point metal nitride film.
Inventors
- 👤 Jeong Tae Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:49
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/047; H10W20/048; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/44; H10W20/033; H10W20/056
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
140 words
A method for forming a metal wire of a semiconductor device, comprising: providing a semiconductor substrate; forming an insulating layer having a contact hole over the semiconductor substrate; forming a high melting point metal film over exposed surfaces of the contact hole and the insulating layer; plasma treating the high melting point metal film to form a dense lower high melting point metal nitride film over the high melting point metal film; forming an upper high melting point metal nitride film over the dense lower high melting point metal nitride film in a chemical vapor deposition process; forming a tungsten layer on the upper high melting point metal nitride film within the contact hole so as to fill the contact hole; and forming a conductive metal film over the tungsten layer and the upper high melting point metal nitride film.
Claim 2
Independent Claim
140 words
A method for forming a metal wire of a semiconductor device, comprising: providing a semiconductor substrate; forming an insulating layer having a contact hole over the semiconductor substrate; forming a high melting point metal film over exposed surfaces of the contact hole and the insulating layer; plasma treating the high melting point metal film to form a dense lower high melting point metal nitride film over the high melting point metal film; forming an upper high melting point metal nitride film over the dense lower high melting point metal nitride film in a chemical vapor deposition process; forming a tungsten layer on the upper high melting point metal nitride film within the contact hole so as to fill the contact hole; and forming a conductive metal film over the tungsten layer and the upper high melting point metal nitride film.
Claim 3
Dependent Claim
18 words
A method in accordance with claim 1, wherein the high melting point metal film includes a titanium film.
Claim 4
Dependent Claim
32 words
A method in accordance with claim 1, wherein both the dense lower high melting point metal nitride layer and the upper high melting point metal nitride layer are formed of titanium nitride.
Claim 5
Dependent Claim
20 words
A method in accordance with claim 1, wherein the plasma treating step is carried out in a nitrogen gas atmosphere.
Claim 6
Dependent Claim
24 words
A method in accordance with claim 4, wherein the plasma treating step is carried out at a nitrogen gas flow rate of 100-700 sccm.
Claim 7
Dependent Claim
35 words
A method in accordance with claim 1, wherein the plasma treating step is carried out: at a temperature of 100°-700° C. under a pressure of 0.3-15 torr with a radio frequency ranging from 100-1000 W.
Claim 8
Dependent Claim
24 words
A method in accordance with claim 1, wherein the upper high melting point metal nitride film is formed from a liquid tetrakisdimethylamino titanium source.
Claim 9
Dependent Claim
24 words
A method in accordance with claim 1, wherein the upper high melting point metal nitride film is formed from a liquid tetrakisdiethylamino titanium source.
Claim 10
Dependent Claim
28 words
A method in accordance with claim 1, wherein the upper high melting point metal nitride film is formed from a source including TiCl 4 and NH 3 .
Claim 11
Dependent Claim
16 words
A method in accordance with claim 1, wherein the conductive metal film includes an aluminum film.
References Cited (Backward Citations)
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US5227334A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-07-13 | 2002-01-12 | 2002-07-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-07-13 | 2006-01-12 | 2006-07-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-07-13 | 2010-01-12 | 2010-07-14 | $7700.00 | Window Closed / Lapsed |