Patent US5780337A successfully refreshed from Google Patents.
US5780337A
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Method of fabricating a bit line of a dynamic random access memory
Assignee: United Microelectronics Corp
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Filing: 1996-11-19
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Granted: 1998-07-14
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Expires: 2016-11-19
Abstract
Abstract A method of forming a bit line of a dynamic random access memory. An insulating layer is used to cover the source/drain region in a substrate. A trench is formed in the insulating layer above the source/drain region. Then, a portion of the insulating layer inside the trench is removed to form an opening which exposes the source/drain region. A conductor is used to fill the trench and the opening so as to form a bit line and a metal plug, respectively.
Inventors
- 👤 Hsiu-Wen Huang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 20:47
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
169 words
A method of forming a bit line of a dynamic random access memory, comprising: providing a substrate having a memory cell region; forming a first memory cell and a second memory cell in the memory cell region, wherein the first memory cell and the second memory cell have a common source/drain region; forming a periphery circuit region on the substrate; forming an insulating layer over the substrate; forming a trench, having a bottom surface, in the insulating layer above the common source/drain region; removing a portion of the insulating layer at the bottom surface of the trench to form a first contact window, wherein the first contact window exposes the common source/drain region; forming a second contact window in the periphery circuit region simultaneously with forming the first contact window in the memory cell region; and filling the trench and the first contact window with a conductor, wherein the conductor in the trench serves as a bit line, and the conductor in the contact window serves as a plug.
Claim 2
Independent Claim
169 words
A method of forming a bit line of a dynamic random access memory, comprising: providing a substrate having a memory cell region; forming a first memory cell and a second memory cell in the memory cell region, wherein the first memory cell and the second memory cell have a common source/drain region; forming a periphery circuit region on the substrate; forming an insulating layer over the substrate; forming a trench, having a bottom surface, in the insulating layer above the common source/drain region; removing a portion of the insulating layer at the bottom surface of the trench to form a first contact window, wherein the first contact window exposes the common source/drain region; forming a second contact window in the periphery circuit region simultaneously with forming the first contact window in the memory cell region; and filling the trench and the first contact window with a conductor, wherein the conductor in the trench serves as a bit line, and the conductor in the contact window serves as a plug.
Claim 3
Dependent Claim
12 words
A method according to claim 1, wherein the insulating layer includes oxide.
Claim 4
Dependent Claim
20 words
A method according to claim 1, wherein the insulating layer has a thickness of about 600 nm to 1000 nm.
Claim 5
Dependent Claim
19 words
A method according to claim 1, wherein the trench has a depth of about 200 nm to 300 nm.
Claim 6
Dependent Claim
19 words
A method according to claim 1, wherein the trench has a width of about 300 nm to 600 nm.
Claim 7
Dependent Claim
11 words
A method according to claim 1, wherein the conductor includes tungsten.
Claim 8
Dependent Claim
18 words
A method according to claim 1, wherein said filling the trench and the first contact window includes sputtering.
Claim 9
Dependent Claim
16 words
A method according to claim 1, further comprising filling the second contact window with a conductor.
References Cited (Backward Citations)
US5248628A
Cited
US5539231A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-07-13 | 2002-01-12 | 2002-07-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-07-13 | 2006-01-12 | 2006-07-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-07-13 | 2010-01-12 | 2010-07-14 | $7700.00 | Window Closed / Lapsed |