Patent US5776640A successfully refreshed from Google Patents.
US5776640A
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Photo mask for a process margin test and a method for performing a process margin test using the same
Assignee: SK Hynix Inc
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Filing: 1997-06-02
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Granted: 1998-07-07
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Expires: 2017-06-02
Abstract
Abstract A photo mask capable of reducing the time taken to carry out a process margin test and a method for performing a process margin test using the photo mask. The method includes the steps of preparing a wafer, coating a photoresist film over the wafer, performing a light exposure and development process for the photoresist film using a photo mask over which a plurality of unit patterns each consisting of three different process margin patterns are arranged, thereby forming a photoresist film pattern, and comparing an image of the photoresist film pattern with data about the process margin patterns of the photo mask stored in a CAD, thereby performing a process margin test.
Inventors
- 👤 Sang Man Bae
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 01:58
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/38; G03F1/44; G03F7/00; G03F7/70; G03F7/70483; G03F7/7055; G03F7/70558; G03F7/20; G03F7/70605; G03F7/70616; G03F7/70641; H; H10; H10P; H10P76/00
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
386 words
A photo mask comprising: a first process margin test pattern including a plurality of line/space patterns consisting of a first pair of line/space patterns having different lengths and a second pair of line/space patterns having different lengths while having a linewidth different from that of the first line/space pattern pair, the first and second line/space patterns being laterally arranged in a repeated manner, and a plurality of contact holes consisting of a first pair of contact holes and a second pair of contact holes, the first and second contact hole pairs being laterally and longitudinally arranged in a repeated manner while being longitudinally spaced from the line/space patterns by a desired distance; a second process margin test pattern including two sets of line/space patterns formed in a symmetrical manner on upper and lower portions of the second process margin test pattern, respectively, each of the line/space pattern sets including a plurality of line/space patterns consisting of a first pair of line/space patterns having different lengths and a second pair of line/space patterns having different lengths while having a linewidth different from that of the first line/space pattern pair, the first and second line/space patterns being laterally arranged in a repeated manner, the longer of the first and second line patterns in the upper line/space pattern set being in contact with the correspondingly longer of the lower line/space pattern set at their facing ends, respectively, whereby the second process margin test pattern has a symmetrical pattern structure; and a third process margin test pattern including two sets of line/space patterns formed in a symmetrical manner on upper and lower portions of the second process margin test pattern, respectively, each of the line/space pattern sets including a plurality of line/space patterns consisting of a first pair of line/space patterns having different lengths and a second pair of line/space patterns having different lengths while having a linewidth different from that of the first line/space pattern pair, the first and second line/space patterns being laterally arranged in a repeated manner, the longer ones of the first and second line patterns in the upper line/space pattern set being spaced from the corresponding longer ones in the lower line/space pattern set by a desired distance at their facing ends, respectively, whereby the second process margin test pattern has a symmetrical pattern structure.
Claim 2
Dependent Claim
386 words
A photo mask comprising: a first process margin test pattern including a plurality of line/space patterns consisting of a first pair of line/space patterns having different lengths and a second pair of line/space patterns having different lengths while having a linewidth different from that of the first line/space pattern pair, the first and second line/space patterns being laterally arranged in a repeated manner, and a plurality of contact holes consisting of a first pair of contact holes and a second pair of contact holes, the first and second contact hole pairs being laterally and longitudinally arranged in a repeated manner while being longitudinally spaced from the line/space patterns by a desired distance; a second process margin test pattern including two sets of line/space patterns formed in a symmetrical manner on upper and lower portions of the second process margin test pattern, respectively, each of the line/space pattern sets including a plurality of line/space patterns consisting of a first pair of line/space patterns having different lengths and a second pair of line/space patterns having different lengths while having a linewidth different from that of the first line/space pattern pair, the first and second line/space patterns being laterally arranged in a repeated manner, the longer of the first and second line patterns in the upper line/space pattern set being in contact with the correspondingly longer of the lower line/space pattern set at their facing ends, respectively, whereby the second process margin test pattern has a symmetrical pattern structure; and a third process margin test pattern including two sets of line/space patterns formed in a symmetrical manner on upper and lower portions of the second process margin test pattern, respectively, each of the line/space pattern sets including a plurality of line/space patterns consisting of a first pair of line/space patterns having different lengths and a second pair of line/space patterns having different lengths while having a linewidth different from that of the first line/space pattern pair, the first and second line/space patterns being laterally arranged in a repeated manner, the longer ones of the first and second line patterns in the upper line/space pattern set being spaced from the corresponding longer ones in the lower line/space pattern set by a desired distance at their facing ends, respectively, whereby the second process margin test pattern has a symmetrical pattern structure.
Claim 3
Dependent Claim
41 words
The photo mask in accordance with claim 1, wherein the line/space patterns of the first line/space pattern pairs in all the test patterns have a linewidth of about 0.3 to 1 μm when i-line is used as a light exposure source.
Claim 4
Dependent Claim
41 words
The photo mask in accordance with claim 1, wherein the line/space patterns of the second line/space pattern pairs in all the test patterns have a linewidth of about 0.3 to 1 μm when i-line is used as a light exposure source.
Claim 5
Dependent Claim
41 words
The photo mask in accordance with claim 1, wherein the line/space patterns of the first line/space pattern pairs in all the test patterns have a linewidth of about 0.2 to 0.7 μm when KrF is used as a light exposure source.
Claim 6
Dependent Claim
41 words
The photo mask in accordance with claim 1, wherein the line/space patterns of the second line/space pattern pairs in all the test patterns have a linewidth of about 0.2 to 0.7 μm when KrF is used as a light exposure source.
Claim 7
Dependent Claim
41 words
The photo mask in accordance with claim 1, wherein the line/space patterns of the first line/space pattern pairs in all the test patterns have a linewidth of about 0.15 to 0.5 μm when ArF is used as a light exposure source.
Claim 8
Dependent Claim
41 words
The photo mask in accordance with claim 1, wherein the line/space patterns of the second line/space pattern pairs in all the test patterns have a linewidth of about 0.15 to 0.5 μm when ArF is used as a light exposure source.
Claim 9
Dependent Claim
34 words
The photo mask in accordance with claim 1, wherein the contact holes of the first and second contact hole pairs have the same linewidths as those of the first and second line/space pairs, respectively.
Claim 10
Dependent Claim
42 words
The photo mask in accordance with claim 1, wherein the contact holes of the first and second contact hole pairs have linewidths longer than those of the first and second line/space pairs by a length of about 0.05 to 0.1 μm, respectively.
Claim 11
Dependent Claim
45 words
The photo mask in accordance with claim 1, wherein the first, second and third process margin test patterns constitute a unit test pattern, and the unit test pattern is provided at each portion of a chip which is longitudinally and laterally divided into 9 portions.
Claim 12
Dependent Claim
27 words
The photo mask in accordance with claim 1, wherein the first, second and third process margin test patterns have a lateral size of 2,000 to 4,000 μm.
Claim 13
Independent Claim
90 words
A method for performing a process margin test, comprising the steps of: preparing a wafer; coating a photoresist film over the wafer; performing a light exposure and development process for the photoresist film using a photo mask over which a plurality of unit patterns each consisting of three different process margin patterns are arranged, thereby forming a photoresist film pattern; and comparing an image of the photoresist film pattern with data about the process margin patterns of the photo mask stored in a CAD, thereby performing a process margin test.
Claim 14
Independent Claim
90 words
A method for performing a process margin test, comprising the steps of: preparing a wafer; coating a photoresist film over the wafer; performing a light exposure and development process for the photoresist film using a photo mask over which a plurality of unit patterns each consisting of three different process margin patterns are arranged, thereby forming a photoresist film pattern; and comparing an image of the photoresist film pattern with data about the process margin patterns of the photo mask stored in a CAD, thereby performing a process margin test.
Claim 15
Dependent Claim
40 words
The method in accordance with claim 12, wherein the photoresist film pattern is checked using a defect checking device to output data about pattern positions and pattern sizes, so that the process margin test is performed using the outputted data.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-07-06 | 2002-01-05 | 2002-07-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-07-06 | 2006-01-05 | 2006-07-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-07-06 | 2010-01-05 | 2010-07-07 | $7700.00 | Window Closed / Lapsed |