Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
172 words
A photo-mask blank for use in a lithography technique, comprising a transparent substrate member having a principal surface and a shading layer of chromium having a first surface in contact with said principal surface and a second surface opposite said first surface, said shading layer comprising: a first portion which is adjacent said principal surface and which provides said first surface, said first portion having a first etch rate; and a second portion which is farther from said first surface than said first portion and which provides said second surface, said second portion having a second etch rate lower than first etch rate to provide in combination therewith a means for rapidly reducing undesired spots of the chromium layer remaining on the substrate to a number which is not greater than 0.1/cm 2 wherein the difference in etch time between the first and second portions is sufficiently great to effect reduction in a time period which is not more than 1.4 times greater than the time period for producing etching without undercutting.
Claim 2
Dependent Claim
172 words
A photo-mask blank for use in a lithography technique, comprising a transparent substrate member having a principal surface and a shading layer of chromium having a first surface in contact with said principal surface and a second surface opposite said first surface, said shading layer comprising: a first portion which is adjacent said principal surface and which provides said first surface, said first portion having a first etch rate; and a second portion which is farther from said first surface than said first portion and which provides said second surface, said second portion having a second etch rate lower than first etch rate to provide in combination therewith a means for rapidly reducing undesired spots of the chromium layer remaining on the substrate to a number which is not greater than 0.1/cm 2 wherein the difference in etch time between the first and second portions is sufficiently great to effect reduction in a time period which is not more than 1.4 times greater than the time period for producing etching without undercutting.
Claim 3
Dependent Claim
37 words
A photo-mask blank as claimed in claim 1 wherein said difference in etch time between the first and second portions is so great that the ratio of the increase in the time period of etching approaches unity.
Claim 4
Dependent Claim
28 words
A photo-mask blank as claimed in claim 1 wherein the ratio of etch time of the seond layer to that of the first layer is at least 4.
Claim 5
Dependent Claim
173 words
A photo-mask for use in lithography technique, comprising a transparent substrate member having a principal surface and a patterned shading layer of chromium having a first surface in contact with said principal surface and a second surface opposite said first surface, said patterned shading layer comprising: a first portion which is adjacent said principal surface and which provides said first surface, said first portion having a first etch rate; and a second portion which is farther from said first surface than said first portion and which provides said second surface, said second portion having a second etch rate lower than said first etch rate to provide in combination therewith a means for rapidly reducing undesired spots of the chromium layer remaining on the substrate to a number which is not greater than 0.1/cm 2 wherein the difference in etch time between the first and second portions is sufficiently great to effect reduction in a time period which is not more than 1.4 time greater than the time period for producing etching without undercutting.
Claim 6
Dependent Claim
173 words
A photo-mask for use in lithography technique, comprising a transparent substrate member having a principal surface and a patterned shading layer of chromium having a first surface in contact with said principal surface and a second surface opposite said first surface, said patterned shading layer comprising: a first portion which is adjacent said principal surface and which provides said first surface, said first portion having a first etch rate; and a second portion which is farther from said first surface than said first portion and which provides said second surface, said second portion having a second etch rate lower than said first etch rate to provide in combination therewith a means for rapidly reducing undesired spots of the chromium layer remaining on the substrate to a number which is not greater than 0.1/cm 2 wherein the difference in etch time between the first and second portions is sufficiently great to effect reduction in a time period which is not more than 1.4 time greater than the time period for producing etching without undercutting.
Claim 7
Dependent Claim
36 words
A photo-mask as claimed in claim 4 wherein said difference in etch time between the first and second portions is so great that the ratio of the increase in the time period of etching approaches unity.
Claim 8
Dependent Claim
27 words
A photo-mask as claimed in claim 2 wherein the ratio of etch time of the second layer to that of the first layer is at least 4.