Patent US5773180A successfully refreshed from Google Patents.
US5773180A
Expired / Lapsed
US
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Measuring method of a relative positional deviation of reticle pattern
Assignee: Mitsubishi Electric Corp
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Filing: 1996-06-14
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Granted: 1998-06-30
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Expires: 2016-06-14
Abstract
Abstract In a projection exposure apparatus which exposes a semiconductor wafer, a reticle is set on a reticle stage, a wafer is set on a wafer stage, and a reticle pattern is projected and exposed on a wafer. In the pattern formed on the wafer, a positional deviation of the pattern is measured with reference a reticle alignment mark. With regard to a plurality of wafers, a difference between positional deviations of the projected patterns at the same coordinate position is obtained, and a relative positional deviation of the reticle patterns is determined.
Inventors
- 👤 Yoshikatu Tomimatu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 08:08
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/70; G03F7/70483; G03F7/70591; G03F7/70605; G03F7/70616; G03F7/70633; G03F7/70691
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
103 words
A method for measuring a relative positional deviation of a common pattern feature on at least two reticles, comprising the steps of: forming at least two projected reticle patterns on a wafer by a projection exposure device using two reticles; measuring a positional deviation of each of the at least two projected reticle patterns from a reference point of the pattern on the wafer; and determining a difference in positional deviations between the at least two projected reticle patterns from a difference in the positional deviation of each of the last least two projected patterns at a same coordinate position on said wafer.
Claim 2
Independent Claim
103 words
A method for measuring a relative positional deviation of a common pattern feature on at least two reticles, comprising the steps of: forming at least two projected reticle patterns on a wafer by a projection exposure device using two reticles; measuring a positional deviation of each of the at least two projected reticle patterns from a reference point of the pattern on the wafer; and determining a difference in positional deviations between the at least two projected reticle patterns from a difference in the positional deviation of each of the last least two projected patterns at a same coordinate position on said wafer.
Claim 3
Dependent Claim
37 words
A method for measuring a relative positional deviation according to claim 1, wherein: said step of measuring the positional deviation of each of the at least two projected patterns uses an alignment mark as the reference point.
Claim 4
Independent Claim
120 words
A method for measuring a relative positional deviation of a pair of reticle patterns, comprising the steps of: projecting, using a projection exposure device, a pattern of a first reticle on a reticle stage onto a wafer position of a wafer stage; projecting, using the projection exposure device, a pattern of a second reticle on the reticle stage onto the wafer position of the wafer stage; measuring a positional deviation of each projected pattern from a reference point of each pattern formed on said wafer position; and obtaining a relative positional deviation of the patterns of the first and second reticles on the reticle stage from a difference in the positional deviation of each projected pattern on the wafer position.
Claim 5
Independent Claim
120 words
A method for measuring a relative positional deviation of a pair of reticle patterns, comprising the steps of: projecting, using a projection exposure device, a pattern of a first reticle on a reticle stage onto a wafer position of a wafer stage; projecting, using the projection exposure device, a pattern of a second reticle on the reticle stage onto the wafer position of the wafer stage; measuring a positional deviation of each projected pattern from a reference point of each pattern formed on said wafer position; and obtaining a relative positional deviation of the patterns of the first and second reticles on the reticle stage from a difference in the positional deviation of each projected pattern on the wafer position.
Claim 6
Dependent Claim
28 words
A method for measuring a relative positional deviation according to claim 3, wherein: said steps of measuring the positional deviations use an alignment mark as the reference point.
Claim 7
Dependent Claim
36 words
A method for measuring a relative positional deviation according to claim 3, wherein: said steps of projecting, measuring, and obtaining project measure and obtain when wafers are mounted at the wafer position of the wafer stage.
Claim 8
Independent Claim
118 words
A method for measuring a relative positional deviation of respective reticle patterns on at least two reticles, comprising the steps of: forming at least two projected reticle patterns on a wafer or respective wafers by a projection exposure device using two reticles of said at least two reticles; measuring a positional deviation of each of the at least two projected reticle patterns from a reference point of the respective patterns on the wafer or respective wafers; and determining a difference in positional deviation between the at least two projected reticle patterns from a difference in the positional deviation of each of the at least two projected patterns at a same coordinate position on said wafer or respective wafers.
Claim 9
Independent Claim
118 words
A method for measuring a relative positional deviation of respective reticle patterns on at least two reticles, comprising the steps of: forming at least two projected reticle patterns on a wafer or respective wafers by a projection exposure device using two reticles of said at least two reticles; measuring a positional deviation of each of the at least two projected reticle patterns from a reference point of the respective patterns on the wafer or respective wafers; and determining a difference in positional deviation between the at least two projected reticle patterns from a difference in the positional deviation of each of the at least two projected patterns at a same coordinate position on said wafer or respective wafers.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-06-29 | 2001-12-29 | 2002-06-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-06-29 | 2005-12-29 | 2006-06-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-06-29 | 2009-12-29 | 2010-06-30 | $7700.00 | Window Closed / Lapsed |