Photomask for the measurement of resolution of exposure equipment

Claim 2

A photomask for the measurement of resolution of exposure equipment, comprising; superimposed patterns, having a common central axis, each of the patterns having a plurality of identical and corresponding sub-patterns and being symmetric on the central axis, the patterns being aligned so that spaces separating pairs of the corresponding sub-patterns become wider or narrower for pairs increasingly spaced from the central axis in sequence, wherein resolution measurement may be made using the spacings between the pairs of sub-patterns.

Claim 3

A photomask in accordance with claim 1, wherein the sub-patterns are of the same width.

Claim 4

A photomask in accordance with claim 2, wherein the width of the sub-patterns is in a range of 5 to 15 μm.

Claim 5

A photomask for the measurement of resolution exposure equipment, comprising a plurality of concentric patterns which are interconnected by connecting films formed in spaces between the concentric patterns.

Claim 6

A photomask for the measurement of resolution exposure equipment, comprising a plurality of concentric patterns which are interconnected by connecting films formed in spaces between the concentric patterns.

Claim 7

A photomask in accordance with claim 4, wherein the concentric patterns have a form of a square, a circle, a "" shape or a "[" shape.

Claim 8

A photomask in accordance with claim 4, wherein two adjacent concentric patterns are of the same line width.

Claim 9

A photomask for use in measuring resolution of exposure equipment, comprising: a transparent substrate; and first and second patterns, each of said first and second patterns having a stepped region symmetrical about a common axis, said first and second patterns being disposed on said substrate with opposing stepped regions, each stepped region comprising a plurality of adjacent sub-patterns, each first sub-pattern which is a part of said first pattern corresponding to a second sub-pattern which is a part of said second pattern, said corresponding first and second sub-patterns being separated by a pair separation, the pair separation increasing for pairs of corresponding first and second sub-patterns spaced further from the common axis in sequence.

Claim 10

A photomask for use in measuring resolution of exposure equipment, comprising: a transparent substrate; and first and second patterns, each of said first and second patterns having a stepped region symmetrical about a common axis, said first and second patterns being disposed on said substrate with opposing stepped regions, each stepped region comprising a plurality of adjacent sub-patterns, each first sub-pattern which is a part of said first pattern corresponding to a second sub-pattern which is a part of said second pattern, said corresponding first and second sub-patterns being separated by a pair separation, the pair separation increasing for pairs of corresponding first and second sub-patterns spaced further from the common axis in sequence.

Claim 11

A photomask for the measurement of resolution of exposure equipment, comprising: a transparent substrate; a plurality of concentric patterns disposed on said substrate for measuring resolution; and connecting films disposed on said substrate between said concentric patterns, for connecting adjacent concentric patterns and preventing peeling of said concentric patterns from the substrate.

Claim 12

A photomask for the measurement of resolution of exposure equipment, comprising: a transparent substrate; a plurality of concentric patterns disposed on said substrate for measuring resolution; and connecting films disposed on said substrate between said concentric patterns, for connecting adjacent concentric patterns and preventing peeling of said concentric patterns from the substrate.

Claim 13

A photomask in accordance with claim 8, wherein said concentric patterns are formed of adjacent pairs of concentric sub-patterns, sub-patterns in a pair having identical widths.

Claim 14

A photomask in accordance with claim 9, further comprising a first spacing distance between a first adjacent pair of concentric sub-patterns and a second spacing distance between a second adjacent pair of concentric sub-patterns, wherein said first spacing distance is greater than said second spacing distance.