Method of forming a resist pattern utilizing correlation between latent image height, resist pattern linewidth and surface modification layer width

Claim 1

A method of forming a resist pattern comprising the steps of: (a) forming a resist layer on a substrate; (b) exposing said resist layer to light to form a predetermined pattern; (c) performing a modification layer formation process to form a surface modification layer locally on said resist layer; and (d) developing said pattern-exposed resist layer for resist pattern formation; (1) determining a height of a latent image formed on said resist layer after said resist layer is exposed to said light: (2) determining a relationship between the height of said latent image and an exposing parameter: (3) determining a relationship between a surface modification layer-width and said exposing parameter: (4) correlating the height of said latent image and surface modification layer-width based on relationships determined in steps (2) and (3) above; (5) determining a first correlation between said height of said latent image and surface modification layer-width: (6) determining a second correlation between the exposing parameter and surface modification layer-width: (7) determining an actual latent-image height produced on an exposed resist layer; (8) estimating from said first correlation a surface modification layer-width that corresponds to said determined actual latent-image height and to a given value of said exposing parameter; (9) estimating from said second correlation an exposing parameter that corresponds to said given value of said exposing parameter and to said estimated resist pattern modification layer-width; (10) determining from said second correlation, a value of said exposing parameter that corresponds to a target surface modification layer-width and to said estimated exposing parameter: and (11) forming, based on said exposing parameter value found, a surface modification layer.

Claim 2

A method of forming a resist pattern comprising the steps of: (a) forming a resist layer on a substrate; (b) exposing said resist layer to light to form a predetermined pattern; (c) performing a modification layer formation process to form a surface modification layer locally on said resist layer; and (d) developing said pattern-exposed resist layer for resist pattern formation; (1) determining a height of a latent image formed on said resist layer after said resist layer is exposed to said light: (2) determining a relationship between the height of said latent image and an exposing parameter: (3) determining a relationship between a surface modification layer-width and said exposing parameter: (4) correlating the height of said latent image and surface modification layer-width based on relationships determined in steps (2) and (3) above; (5) determining a first correlation between said height of said latent image and surface modification layer-width: (6) determining a second correlation between the exposing parameter and surface modification layer-width: (7) determining an actual latent-image height produced on an exposed resist layer; (8) estimating from said first correlation a surface modification layer-width that corresponds to said determined actual latent-image height and to a given value of said exposing parameter; (9) estimating from said second correlation an exposing parameter that corresponds to said given value of said exposing parameter and to said estimated resist pattern modification layer-width; (10) determining from said second correlation, a value of said exposing parameter that corresponds to a target surface modification layer-width and to said estimated exposing parameter: and (11) forming, based on said exposing parameter value found, a surface modification layer.

Claim 7

A method of forming a resist patten comprising the steps of: (a) pre-obtaining a correlation between the width of a surface modification layer formed on a resist layer and the linewidth of a resist pattern resulting from developing said resist layer having thereon said surface modification layer; (b) forming an actual resist layer on a substrate; (c) exposing said actual resist layer to light to a predetermined pattern; (d) forming an actual surface modification layer on said actual resist layer having said predetermined pattern; (e) determining the width of said actual surface modification layer, and obtaining from said pre-found correlation an estimated linewidth which is a resist pattern-linewidth corresponding to said actual surface modification layer width determined; (f) determining whether said estimated linewidth falls in a range of tolerance limits of a target linewidth, wherein if said estimated linewidth is found to fall in said range a develop process is performed on said actual resist layer to form a resist pattern, while on the other hand if said estimated linewidth is found not to fall in said range said actual resist layer is removed away from said substrate.

Claim 8

A method of forming a resist patten comprising the steps of: (a) pre-obtaining a correlation between the width of a surface modification layer formed on a resist layer and the linewidth of a resist pattern resulting from developing said resist layer having thereon said surface modification layer; (b) forming an actual resist layer on a substrate; (c) exposing said actual resist layer to light to a predetermined pattern; (d) forming an actual surface modification layer on said actual resist layer having said predetermined pattern; (e) determining the width of said actual surface modification layer, and obtaining from said pre-found correlation an estimated linewidth which is a resist pattern-linewidth corresponding to said actual surface modification layer width determined; (f) determining whether said estimated linewidth falls in a range of tolerance limits of a target linewidth, wherein if said estimated linewidth is found to fall in said range a develop process is performed on said actual resist layer to form a resist pattern, while on the other hand if said estimated linewidth is found not to fall in said range said actual resist layer is removed away from said substrate.