Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
134 words
An improved trench MOS gate device comprising: a trench gate having a floor and sidewalls, said floor and said sidewalls comprising a layer of a dielectric material, said floor layer and said sidewall layers each having a substantially uniform controlled thickness dimension, wherein said substantially uniform thickness dimensions are related by a controlled floor to sidewall layer thickness ratio, said ratio being established by individually controlling the substantially uniform thickness of each of said floor and sidewall layers, and said thickness of said floor is greater than said thickness of said sidewall layers, wherein said floor layer and said sidewall layers each comprise a composite of thermally oxidized dielectric material having an oxygen concentration that decreases in a direction toward the floor or sidewall and deposited dielectric material having a substantially constant oxygen concentration.
Claim 2
Dependent Claim
134 words
An improved trench MOS gate device comprising: a trench gate having a floor and sidewalls, said floor and said sidewalls comprising a layer of a dielectric material, said floor layer and said sidewall layers each having a substantially uniform controlled thickness dimension, wherein said substantially uniform thickness dimensions are related by a controlled floor to sidewall layer thickness ratio, said ratio being established by individually controlling the substantially uniform thickness of each of said floor and sidewall layers, and said thickness of said floor is greater than said thickness of said sidewall layers, wherein said floor layer and said sidewall layers each comprise a composite of thermally oxidized dielectric material having an oxygen concentration that decreases in a direction toward the floor or sidewall and deposited dielectric material having a substantially constant oxygen concentration.
Claim 3
Dependent Claim
16 words
A trench MOS gate device according to claim 1, wherein said dielectric material comprises silicon dioxide.
Claim 4
Dependent Claim
19 words
A trench MOS gate device according to claim 1, wherein said thickness ratio is at least 1.2 to 1.
Claim 5
Dependent Claim
24 words
A trench MOS gate device according to claim 2, wherein said floor layer comprises silicon dioxide with a thickness of 300 to 3,000 angstroms.
Claim 6
Dependent Claim
24 words
A trench MOS gate device according to claim 2, wherein said sidewall layers comprise silicon dioxide with a thickness of 200 to 1,500 angstroms.
Claim 7
Dependent Claim
21 words
A trench MOS gate device according to claim 1, wherein said trench gate further comprises doped polysilicon disposed within said trench.
Claim 8
Dependent Claim
17 words
A trench MOS gate device according to claim 1, wherein said trench has an open-cell, stripe topology.
Claim 9
Dependent Claim
17 words
A trench MOS gate device according to claim 1, wherein said trench has a closed-cell, cellular topology.
Claim 10
Dependent Claim
17 words
A trench MOS gate device according to claim 8, wherein said trench has a square cellular topology.
Claim 11
Dependent Claim
17 words
A trench MOS gate device according to claim 8, wherein said trench has a hexagonal cellular topology.
Claim 12
Dependent Claim
12 words
A semiconductor device comprising the trench MOS gate device of claim 1.
Claim 13
Dependent Claim
10 words
A semiconductor device of claim 11 comprising a DMOS transistor.
Claim 14
Dependent Claim
12 words
A semiconductor device of claim 11 comprising an insulated gate bipolar transistor.
Claim 15
Dependent Claim
10 words
A semiconductor device of claim 11 comprising an MOS-controlled thyristor.
Claim 16
Dependent Claim
26 words
A trench MOS gate device according to claim 2, wherein said thermally grown silicon dioxide comprises a product of reaction of silicon in an oxygen-containing atmosphere.
Claim 17
Dependent Claim
26 words
A trench MOS gate device according to claim 2, wherein said deposited silicon dioxide comprises a chemical vapor deposited reaction product of a volatile silicon-containing compound.