Patent US5770465A successfully refreshed from Google Patents.
US5770465A
Expired / Lapsed
US
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Trench-filling etch-masking microfabrication technique
Assignee: Cornell Research Foundation Inc
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Filing: 1996-06-21
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Granted: 1998-06-23
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Expires: 2016-06-21
Abstract
Abstract A process is described for manufacturing submicron, ultra-high aspect ratio microstructures using a trench-filling etch masking technique. Deep trenches are etched into a substrate, the trenches are filled with an appropriate trench-filling material, and deep etching into the substrate is carried out with the trench-filling material serving as a mask.
Inventors
- 👤 Noel C. MacDonald
- 👤 Xiaojun Trent Huang
- 👤 Liang-Yuh Chen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 23:51
CPC Classifications
B; B81; B81C; B81C1/00; B81C1/00436; B81C1/00555; B81C1/00619; B81C1/00444; B81C1/00468; B81C1/00484; B81B; B81B2203/00; B81B2203/01; B81B2203/0118; B81B2203/03; B81B2203/0361; B81C2201/00; B81C2201/05; B81C2201/053
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
87 words
A process for manufacturing submicron, ultra-high aspect ratio microstructures using a trench filling mask comprising the steps of: etching at least one trench in a substrate to a depth equal to a predetermined desired mask height; filling said at least one trench with a trench filling material; planarizing said trench filling material to a level exposing a top surface of said substrate; and, etching said substrate wherein said trench filling material serves as an etch mask, preventing etching of said substrate immediately below said trench filling material.
Claim 2
Dependent Claim
87 words
A process for manufacturing submicron, ultra-high aspect ratio microstructures using a trench filling mask comprising the steps of: etching at least one trench in a substrate to a depth equal to a predetermined desired mask height; filling said at least one trench with a trench filling material; planarizing said trench filling material to a level exposing a top surface of said substrate; and, etching said substrate wherein said trench filling material serves as an etch mask, preventing etching of said substrate immediately below said trench filling material.
Claim 3
Dependent Claim
25 words
The process of claim 1 further comprising the additional step of etching said substrate to undercut beneath said etch mask to form a free-standing structure.
Claim 4
Dependent Claim
19 words
The process of claim 2 further comprising the additional step of applying a metallization layer on said free-standing structure.
Claim 5
Dependent Claim
107 words
A process for manufacturing submicron, ultra-high aspect ratio microstructures using trench filling masks of differing heights comprising the steps of: etching a first trench into a substrate to a depth equal to a first predetermined desired mask height; etching a second trench into said substrate to a depth equal to a second predetermined desired mask height; filling said first and second trenches with a trench filling material; planarizing said trench filling material to a level exposing a top surface of said substrate; and, etching said substrate wherein said trench filling material serves as an etch mask, preventing etching of said substrate immediately below said trench filling material.
Claim 6
Dependent Claim
107 words
A process for manufacturing submicron, ultra-high aspect ratio microstructures using trench filling masks of differing heights comprising the steps of: etching a first trench into a substrate to a depth equal to a first predetermined desired mask height; etching a second trench into said substrate to a depth equal to a second predetermined desired mask height; filling said first and second trenches with a trench filling material; planarizing said trench filling material to a level exposing a top surface of said substrate; and, etching said substrate wherein said trench filling material serves as an etch mask, preventing etching of said substrate immediately below said trench filling material.
Claim 7
Dependent Claim
30 words
The process of claim 4 further comprising the additional step of etching said substrate to undercut beneath said first and second etch masks to form free-standing first and second structures.
Claim 8
Dependent Claim
97 words
A process for manufacturing submicron, ultra-high aspect ratio microstructures using a trench filling mask formed below the surface of a substrate within a trench comprising the steps of: etching a first trench having a bottom and sidewalls into a substrate; etching a second trench within said first trench; filling said second trench with a trench filling material; planarizing said trench filling material to a level exposing said bottom of said first trench; and, etching said substrate wherein said trench filling material serves as an etch mask, preventing etching of said substrate immediately below said trench filling material.
Claim 9
Dependent Claim
97 words
A process for manufacturing submicron, ultra-high aspect ratio microstructures using a trench filling mask formed below the surface of a substrate within a trench comprising the steps of: etching a first trench having a bottom and sidewalls into a substrate; etching a second trench within said first trench; filling said second trench with a trench filling material; planarizing said trench filling material to a level exposing said bottom of said first trench; and, etching said substrate wherein said trench filling material serves as an etch mask, preventing etching of said substrate immediately below said trench filling material.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-06-22 | 2001-12-22 | 2002-06-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-06-22 | 2005-12-22 | 2006-06-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-06-22 | 2009-12-22 | 2010-06-23 | $7700.00 | Window Closed / Lapsed |