Patent US5770100A successfully refreshed from Google Patents.
US5770100A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of treating samples
Assignee: Individual
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Filing: 1996-06-12
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Granted: 1998-06-23
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Expires: 2016-06-12
Abstract
Abstract A post-etch treatment method capable of imparting high corrosion prevention performance to the aluminum-containing wiring films. The sample of aluminum-containing wiring material that is etched using the halogen-type gas is treated with the plasma of a gas that has the oxygen component, and the resist formed on the aluminum-containing wiring material is reacted with oxygen and is removed. Further, the plasma is generated using a gas having the hydrogen component or this gas is liquefied into droplets thereof on the sample surface, so that halogen components (Cl, Br, etc.) adhered to the aluminum-containing wiring material through the etching treatment are reacted with hydrogen and are effectively removed in the form of hydrogen chloride (HCl) or hydrogen bromide (HBr). This makes it possible to obtain the aluminum-containing wiring material having high corrosion prevention performance.
Inventors
- 👤 Ryooji Fukuyama
- 👤 Makoto Nawata
- 👤 Yutaka Kakehi
- 👤 Hironobu Kawahara
- 👤 Yoshiaki Sato
- 👤 Yoshimi Torii
- 👤 Akira Kawaraya
- 👤 Yoshie Sato
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 01:06
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/20; H10P70/27; H10P70/273; C; C23; C23F; C23F4/00; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; Y; Y10; Y10S; Y10S438/00; Y10S438/906; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528; Y10T428/12736; Y10T428/31504; Y10T428/31678
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
54 words
A method of treating a sample comprising: a step for etching said sample, said sample having an aluminum-containing wiring material coated with a resist using an etching gas thereby forming residual adhered matter; and a step for removing said residual adhered matter from at least a surface of said sample using a water vapor.
Claim 2
Independent Claim
54 words
A method of treating a sample comprising: a step for etching said sample, said sample having an aluminum-containing wiring material coated with a resist using an etching gas thereby forming residual adhered matter; and a step for removing said residual adhered matter from at least a surface of said sample using a water vapor.
Claim 3
Independent Claim
64 words
A method for treating a sample comprising: a step for etching said sample, said sample having an aluminum-containing wiring material coated with a resist, using an etching gas thereby forming residual adhered matter; a step for stripping said resist by a microwave plasma; and a step for removing said residual adhered matter from at least a surface of said sample using a water vapor.
Claim 4
Independent Claim
64 words
A method for treating a sample comprising: a step for etching said sample, said sample having an aluminum-containing wiring material coated with a resist, using an etching gas thereby forming residual adhered matter; a step for stripping said resist by a microwave plasma; and a step for removing said residual adhered matter from at least a surface of said sample using a water vapor.
Claim 5
Independent Claim
69 words
A method for treating a sample comprising: a step for generating a plasma using an etching gas; a step for etching said sample using said generated plasma; a step for stripping a resist on said etched sample; and a step for treating said etched sample using water vapor, wherein said step for treating said etched sample using water vapor is conducted after said step for stripping of said resist.
Claim 6
Independent Claim
69 words
A method for treating a sample comprising: a step for generating a plasma using an etching gas; a step for etching said sample using said generated plasma; a step for stripping a resist on said etched sample; and a step for treating said etched sample using water vapor, wherein said step for treating said etched sample using water vapor is conducted after said step for stripping of said resist.
Claim 7
Dependent Claim
30 words
A method for treating a sample according to claim 3, wherein said step for stripping a resist on said etched sample strips said resist using a plasma generated by microwave.
Claim 8
Independent Claim
90 words
A method for treating a sample to etch an aluminum-containing wiring material and impart high corrosion preventing performance thereto, comprising the steps of: providing a substrate, an aluminum-containing wiring material on a surface thereof and a patterned resist over said aluminum-containing wiring material; etching said aluminum-containing wiring material with a halogen containing gas using said patterned resist as a mask, thereby forming a wiring pattern but leaving residual halogen components; removing said resist using a gas containing an oxygen component; and then removing said residual halogen components using water vapor.
Claim 9
Independent Claim
90 words
A method for treating a sample to etch an aluminum-containing wiring material and impart high corrosion preventing performance thereto, comprising the steps of: providing a substrate, an aluminum-containing wiring material on a surface thereof and a patterned resist over said aluminum-containing wiring material; etching said aluminum-containing wiring material with a halogen containing gas using said patterned resist as a mask, thereby forming a wiring pattern but leaving residual halogen components; removing said resist using a gas containing an oxygen component; and then removing said residual halogen components using water vapor.
Claim 10
Dependent Claim
104 words
A method according to claim 5, wherein the step of removing said residual halogen components comprises feeding water vapor to a treatment chamber in which said sample is provided, thereby increasing a pressure within said chamber until said water vapor is condensed and adsorbed as water on said sample; allowing the halogen components from at least said wiring pattern to dissolve in the condensed and adsorbed water; and then decreasing the pressure within said chamber to vaporize the condensed and adsorbed water to remove the halogen components from at least said wiring pattern, thereby imparting a high corrosion prevention performance to said wiring pattern.
Claim 11
Independent Claim
80 words
A method for treating samples, comprising: providing a substrate, an aluminum-containing wiring material on a surface thereof, and a patterned resist over said aluminum-containing wiring material; etching said aluminum-containing wiring material with a halogen containing gas using said patterned resist as a mask; removing said resist using a plasma of a treatment gas including an oxygen component; and then treating said aluminum-containing wiring material using a plasma of a treatment gas including a hydrogen component but excluding a halogen component.
Claim 12
Independent Claim
80 words
A method for treating samples, comprising: providing a substrate, an aluminum-containing wiring material on a surface thereof, and a patterned resist over said aluminum-containing wiring material; etching said aluminum-containing wiring material with a halogen containing gas using said patterned resist as a mask; removing said resist using a plasma of a treatment gas including an oxygen component; and then treating said aluminum-containing wiring material using a plasma of a treatment gas including a hydrogen component but excluding a halogen component.
Claim 13
Independent Claim
80 words
A method for treating samples, comprising: providing a substrate, an aluminum-containing wiring material on a surface thereof, and a patterned resist over said aluminum-containing wiring material; etching said aluminum-containing wiring material with a halogen containing gas using said patterned resist as a mask; treating said aluminum-containing wiring material using a plasma of a treatment gas including a hydrogen component but excluding a halogen component; and then removing said resist using a plasma of a treatment gas including an oxygen component.
Claim 14
Independent Claim
80 words
A method for treating samples, comprising: providing a substrate, an aluminum-containing wiring material on a surface thereof, and a patterned resist over said aluminum-containing wiring material; etching said aluminum-containing wiring material with a halogen containing gas using said patterned resist as a mask; treating said aluminum-containing wiring material using a plasma of a treatment gas including a hydrogen component but excluding a halogen component; and then removing said resist using a plasma of a treatment gas including an oxygen component.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-06-22 | 2001-12-22 | 2002-06-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-06-22 | 2005-12-22 | 2006-06-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-06-22 | 2009-12-22 | 2010-06-23 | $7700.00 | Window Closed / Lapsed |