US5767582A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Surface conditioning insulating layer for fine line conductive pattern
Assignee: GlobalFoundries Inc
•
Filing: 1997-01-24
•
Granted: 1998-06-16
•
Expires: 2017-01-24
Abstract
Abstract The surface of an insulating layer is conditioned by treatment with ammonium hydroxide and hydrogen peroxide, thereby reducing the frequency of shorting between conductive lines of a subsequently formed conductive pattern thereon.
Inventors
- 👤 Eddie Lee
- 👤 JoAnn Grimley
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 19:33
CPC Classifications
H; H10; H10P; H10P95/00; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/40; H10W20/45; H10W20/48
Claims Analysis
Total Claims: 35
Claim 1
Independent Claim
96 words
A semiconductor device, comprising: a substrate; an insulating layer formed on the substrate; a conductive pattern comprising a plurality of conductive lines having an interwiring spacing therebetween formed on the insulating layer; wherein, the interwiring spacing is occupied by dielectric material, and the conductive pattern is formed by: treating a surface of the insulating layer with ammonium hydroxide and hydrogen peroxide under conditions sufficient to alter the condition the surface, thereby reducing the frequency of shorting between the subsequently formed conductive lines; and forming the conductive pattern directly on the treated surface of the insulating layer.
Claim 2
Dependent Claim
96 words
A semiconductor device, comprising: a substrate; an insulating layer formed on the substrate; a conductive pattern comprising a plurality of conductive lines having an interwiring spacing therebetween formed on the insulating layer; wherein, the interwiring spacing is occupied by dielectric material, and the conductive pattern is formed by: treating a surface of the insulating layer with ammonium hydroxide and hydrogen peroxide under conditions sufficient to alter the condition the surface, thereby reducing the frequency of shorting between the subsequently formed conductive lines; and forming the conductive pattern directly on the treated surface of the insulating layer.
Claim 3
Dependent Claim
22 words
The semiconductor device according to claim 1, wherein the conductive pattern is formed by depositing a layer of conductive material and etching.
Claim 4
Dependent Claim
30 words
The semiconductor device according to claim 1, wherein the conductive pattern is formed by a damascene technique comprising forming trenches defining the conductive pattern and depositing a conductive material therein.
Claim 5
Dependent Claim
27 words
The semiconductor device according to claim 1, wherein the surface of the insulating layer is treated by rinsing with a solution of ammonium hydroxide and hydrogen peroxide.
Claim 6
Dependent Claim
28 words
The semiconductor device according to claim 4, wherein the surface of the insulating material is treated by rinsing with a solution of ammonium hydroxide, hydrogen peroxide and water.
Claim 7
Dependent Claim
13 words
The semiconductor device according to claim 5, wherein the water is deionized water.
Claim 8
Dependent Claim
30 words
The semiconductor device according to claim 5, wherein the solution contains about 4% to about 15% by volume ammonium hydroxide and about 8% to about 30% by volume hydrogen peroxide.
Claim 9
Dependent Claim
30 words
The semiconductor device according to claim 7, wherein the solution contains about 6% to about 10% by volume ammonium hydroxide and about 10% to about 20% by volume hydrogen peroxide.
Claim 10
Dependent Claim
30 words
The semiconductor device according to claim 8, wherein the solution contains about 8% by volume ammonium hydroxide, about 15% by volume hydrogen peroxide and about 77% by volume deionized water.
Claim 11
Dependent Claim
23 words
The semiconductor device according to claim 4, wherein the surface of the insulating layer is treated for about 3 to about 10 minutes.
Claim 12
Dependent Claim
20 words
The semiconductor device according to claim 9, wherein the surface of the insulating layer is treated for about 6 minutes.
Claim 13
Dependent Claim
24 words
The semiconductor device according to claim 1, wherein the surface of the insulating layer is treated by immersion in ammonium hydroxide and hydrogen peroxide.
Claim 14
Dependent Claim
52 words
The semiconductor device according to claim 4, wherein the surface of the insulating layer is treated by placing the substrate containing the insulating layer into an apparatus in which the substrate is rotated while a solution comprising ammonium hydroxide, hydrogen peroxide and water is applied to the surface of the insulating layer.
Claim 15
Dependent Claim
14 words
The semiconductor device according to claim 1, wherein the conductive pattern comprises a metal.
Claim 16
Dependent Claim
12 words
The semiconductor device according to claim 14, wherein the metal is tungsten.
Claim 17
Dependent Claim
15 words
The semiconductor device according to claim 14, wherein the conductive pattern comprises a barrier layer.
Claim 18
Dependent Claim
15 words
The semiconductor device according to claim 15, wherein the conductive pattern comprises a barrier layer.
Claim 19
Dependent Claim
18 words
The semiconductor device according to claim 16, wherein the barrier layer comprises titanium, titanium nitride or titanium-titanium nitride.
Claim 20
Dependent Claim
18 words
The semiconductor device according to claim 17, wherein the barrier layer comprises titanium, titanium nitride or titanium-titanium nitride.
Claim 21
Dependent Claim
17 words
The semiconductor device according to claim 1, wherein the interwiring spacing is less than about 1 micron.
Claim 22
Dependent Claim
17 words
The semiconductor device according to claim 20, wherein the interwiring spacing is less than about 0.5 microns.
Claim 23
Dependent Claim
24 words
The semiconductor device according to claim 1, wherein the insulating layer comprises a material selected from the group consisting of oxides, nitrides and oxynitrides.
Claim 24
Dependent Claim
14 words
The semiconductor device according to claim 22, wherein the insulating material comprises silicon dioxide.
Claim 25
Dependent Claim
14 words
The semiconductor device according to claim 22, wherein the insulating material comprises silicon nitride.
Claim 26
Dependent Claim
14 words
The semiconductor device according to claim 22, wherein the insulating material comprises silicon oxynitride.
Claim 27
Dependent Claim
22 words
The semiconductor device according to claim 1, wherein the surface of the insulating layer is treated under elevated temperature and/or elevated pressure.
Claim 28
Dependent Claim
26 words
The semiconductor device according to claim 26, wherein the ammonium hydroxide and hydrogen peroxide are applied to the surface of the insulating layer through a nozzle.
Claim 29
Dependent Claim
34 words
The semiconductor device according to claim 27, wherein the substrate is rotated while a solution comprising ammonium hydroxide, hydrogen peroxide and water is applied to the surface of the insulating layer through the nozzle.
Claim 30
Dependent Claim
27 words
The semiconductor device according to claim 26, wherein the ammonium hydroxide and hydrogen peroxide are applied to the surface of the insulating layer at an elevated pressure.
Claim 31
Dependent Claim
27 words
The semiconductor device according to claim 26, wherein the ammonium hydroxide and hydrogen peroxide are applied to the surface of the insulating layer at an elevated temperature.
Claim 32
Dependent Claim
18 words
The semiconductor device according to claim 30, wherein the temperature is about 70° C. to about 120° C.
Claim 33
Dependent Claim
18 words
The semiconductor device according to claim 31, wherein the temperature is about 80° C. to about 110° C.
Claim 34
Dependent Claim
17 words
The semiconductor device according to claim 1, wherein the interwiring spacing is less than about 1 micron.
Claim 35
Dependent Claim
17 words
The semiconductor device according to claim 33, wherein the interwiring spacing is less than about 0.5 microns.
References Cited (Backward Citations)
US4014772A
Cited
US4946550A
Cited
US5001079A
Cited
US5093279A
Cited
US5262354A
Cited
US5407529A
Cited
US5393686A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-06-15 | 2001-12-15 | 2002-06-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-06-15 | 2005-12-15 | 2006-06-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-06-15 | 2009-12-15 | 2010-06-16 | $7700.00 | Window Closed / Lapsed |