Semiconductor packages for high I/O semiconductor dies

Claim 2

A semiconductor device requiring a high number of connections, comprising: a first substrate having two opposite surfaces, one of which is a first surface, another of which is a second surface, a die-receiving area defined on the first surface of the first substrate; a first plurality of conductive lines on the first surface of the first substrate; a second plurality of conductive lines on the first surface of the first substrate, the second plurality of conductive lines at a distance from the die-receiving area bending out-of-plane, away from the first and second surfaces of the first substrate, so as to have free ends; a semiconductor die having; a first plurality of bond sites around a periphery of a one surface of the semiconductor die; a second plurality of bond sites around a periphery of an other surface of the semiconductor die, the other surface of the die being opposite the one surface of the die; and the first plurality of conductive lines being within the die-receiving area where the die is mounted on the first surface of the first substrate so that the first plurality of bond sites of the die are connected by first connections to the first plurality of conductive lines; and a second substrate having a plurality of conductive traces, each of the plurality of conductive traces having first ends and second ends, the first ends connecting to the free ends of the second plurality of conductive lines, and the second ends connecting to the second plurality of bond sites on the die.

Claim 3

The semiconductor device of claim 1, wherein: the first connections are flip-chip type connections; and the second plurality of conductive lines extend between the first conductive lines and only partially toward the die receiving area on the first surface of the first substrate.

Claim 4

The semiconductor device of claim 1, wherein the second plurality of conductive lines are disposed on the first surface of the first substrate between the first plurality of conductive lines.

Claim 5

The semiconductor device of claim 1, wherein: the first plurality of bond sites are first bond bumps; the second plurality of bond sites are second bond bumps; the first connections are flip-chip type connections between the first plurality of conductive lines and the first bond bumps; and the second ends of the conductive traces are connected to the second bond bumps on the die using flip-chip type connections.

Claim 6

The semiconductor device of claim 1, further comprising standoff elements between the first substrate and the second substrate to establish a predetermined spacing between the first substrate and the second substrate.

Claim 7

The semiconductor device of claim 1, wherein the number of connections effected between the first plurality of conductive lines and the first plurality of bond sites, plus the number of connections effected between the second plurality of conductive lines and the second plurality of bond sites is at least 500.

Claim 8

The semiconductor device of claim 1, wherein the number of connections effected between the first plurality of conductive lines and the first plurality of bond sites, plus the number of connections effected between the second plurality of conductive lines and the second plurality of bond sites is at least 900.

Claim 9

A semiconductor device requiring a high number of connections, comprising: a substrate having two opposite surfaces, one of which is a first surface, another of which is a second surface, a die-receiving area defined on the first surface of the substrate; a first plurality of conductive lines on the first surface of the substrate; a second plurality of conductive lines on the second surface of the substrate, wherein the second plurality of conductive lines is distinct from the first plurality of conductive lines; the substrate having an opening through the substrate within the die-receiving area, the opening forming a pathway between the first surface of the substrate to the second surface of the substrate; a semiconductor die having: one side having a periphery surrounding a center; a first plurality of bond sites around the periphery of the one side of the semiconductor die; a second plurality of bond sites on the one side of the semiconductor die inward towards the center of the one side of the semiconductor die from the first plurality of bond sites around the periphery of the one side; the first plurality of conductive lines being within the die-receiving area where the die is mounted on the first surface of the substrate so that the first plurality of bond sites of the die are connected by first connections to corresponding ones of the first plurality of conductive lines such that the second bond sites are exposed within the opening through the substrate; and the second plurality of bond sites of the die are connected by second connections to the second plurality of conductive lines through the opening in the substrate.

Claim 10

A semiconductor device requiring a high number of connections, comprising: a substrate having two opposite surfaces, one of which is a first surface, another of which is a second surface, a die-receiving area defined on the first surface of the substrate; a first plurality of conductive lines on the first surface of the substrate; a second plurality of conductive lines on the second surface of the substrate, wherein the second plurality of conductive lines is distinct from the first plurality of conductive lines; the substrate having an opening through the substrate within the die-receiving area, the opening forming a pathway between the first surface of the substrate to the second surface of the substrate; a semiconductor die having: one side having a periphery surrounding a center; a first plurality of bond sites around the periphery of the one side of the semiconductor die; a second plurality of bond sites on the one side of the semiconductor die inward towards the center of the one side of the semiconductor die from the first plurality of bond sites around the periphery of the one side; the first plurality of conductive lines being within the die-receiving area where the die is mounted on the first surface of the substrate so that the first plurality of bond sites of the die are connected by first connections to corresponding ones of the first plurality of conductive lines such that the second bond sites are exposed within the opening through the substrate; and the second plurality of bond sites of the die are connected by second connections to the second plurality of conductive lines through the opening in the substrate.

Claim 11

The semiconductor device of claim 8, wherein: the first plurality of conductive lines extends to within the die-receiving area; and the second plurality of conductive lines extends to an edge of the opening through the substrate.

Claim 12

The semiconductor device of claim 8, wherein: the second set of bond pads are provided in a central area of the one side of the semiconductor die.

Claim 13

The semiconductor device of claim 8, wherein: the first bond sites are bond bumps; the second bond sites are bond pads; the first connections are flip-chip type connections between ends of the first plurality of conductive lines and the bond bumps; and the second connections are effected by bond wires between the second plurality of conductive lines and the bond pads.

Claim 14

The semiconductor device of claim 11, wherein the third plurality of conductive lines extend only partially towards the opening and terminate outside of the area where the die is mounted, and are disposed between the first conductive lines.

Claim 15

The semiconductor device of claim 11, wherein the number of connections effected between the first conductive lines and the first bond sites, plus the number of connections effected between the second conductive lines and the second bond sites, plus the number of connections effected between the third conductive lines and the third bond sites is at least 500.

Claim 16

The semiconductor device of claim 11, wherein the number of connections effected between the first conductive lines and the first bond sites, plus the number of connections effected between the second conductive lines and the second bond sites, plus the number of connections effected between the third conductive lines and the third bond sites is at least 900.

Claim 17

The semiconductor device of claim 8, further comprising: a third plurality of conductive lines on the one surface of the substrate; a third plurality of bond sites on a side of the die opposite the first and second bond sites; and the third plurality of bond sites are connected to the third plurality of conductive lines.

Claim 18

The semiconductor device of claim 8, wherein the number of connections effected between the first conductive lines and the first bond sites, plus the number of connections effected between the second conductive lines and the second bond sites is at least 500.