Power mosfet having current detection means

Claim 2

A power MOSFET device comprising: a main MOSFET connected between a high voltage power supply side terminal and a low voltage power supply side terminal; and a series circuit composed of a sensing MOSFET and a current-to-voltage converting means, said series circuit being connected in parallel to said main MOSFET, said sensing MOSFET having a gate connected to a gate of said main MOSFET, wherein said current-to-voltage converting means includes an enhancement type MOSFET that has a gate and a drain connected to each other.

Claim 3

A power MOSFET device claimed in claim 1 wherein a back gate of said MOSFET constituting said current-to-voltage converting means is connected to said low voltage power supply side terminal.

Claim 4

A power MOSFET device claimed in claim 1, further including a reference voltage generating MOSFET having a gate and a drain connected to each other, and a voltage comparing means having a first input connected to receive an output voltage of said current-to-voltage converting means and a second input connected to a reference voltage generated by said reference voltage generating MOSFET.

Claim 5

A power MOSFET device claimed in claim 1, further including a reference voltage generating MOSFET having a gate and a source connected to each other, and a voltage comparing means having a first input connected to receive an output voltage of said current-to-voltage converting means and a second input connected to a reference voltage generated by said reference voltage generating MOSFET.

Claim 6

A Power MOSFET device claimed in claim 1, further including a reference voltage generating means which includes a first resistor having one end connected to receive said gate of said main MOSFET, a Zener diode having a cathode connected to the other end of said first resistor and an anode connected to said low voltage power supply side terminal, a second resistor having one end connected to said cathode of said Zener Diode, a reference voltage generating MOSFET having a drain and a gate connected in common to the other end of said second resistor and a source and a back gate connected in common to said low voltage power supply side terminal, and a voltage comparing means having a first input connected to receive an output voltage of said current-to-voltage converting means and a second input connected to a reference voltage outputted from a connection node between said second resistor and said reference voltage generating MOSFET, wherein said reference generating MOSFET has a current-voltage characteristics similar to said enhancement type MOSFET.

Claim 7

A power MOSFET device claimed in claim 1, further including a reference voltage generating means which includes a first resistor having one end connected to receive said gate of said main MOSFET, a Zener diode having a cathode connected to the other end of said first resistor and an anode connected to said low voltage power supply side terminal, a second resistor having one end connected to said cathode of said Zener diode, a reference voltage generating MOSFET having a source, a gate and a back gate connected in common to the other end of said second resistor and a drain connected in common to said low voltage power supply side terminal, and a voltage comparing means having a first input connected to receive an output voltage of said current-to-voltage converting means and a second input connected to a reference voltage outputted from a connection node between said second resistor and said reference voltage generating MOSFET, wherein said reference generating MOSFET has a current-voltage characteristics similar to said enhancement type MOSFET.

Claim 8

A power MOSFET device comprising: a first terminal and a second terminal which are connected in series with a load resistor between a high voltage power supply voltage and a low voltage power supply voltage; a main MOSFET having a pair of current path ends, a gate and a back gate, one of said pair of current path ends being connected to said first terminal, the other of said pair of current path ends being connected to said second terminal, said back gate being connected to a selected one of said first terminal and said second terminal; a series circuit composed of a sensing MOSFET and a converting MOSFET connected in series to each other, said series circuit being connected in parallel to said main MOSFET between said first terminal and said second terminal, said sensing MOSFET having a pair of current path ends, a gate and a back gate, one of said pair of current path ends being connected to one of said first terminal and said second terminal, said back gate being connected to said selected one of said first terminal and said second terminal, said converting MOSFET having a gate and a pair of current path ends, said gate and one of said pair of current path ends being connected to the other of said pair of current path ends of said sensing MOSFET, the other of said pair of current path ends of said converting MOSFET being connected to the other of said first terminal and said second terminal, so that a shunted current flowing through said sensing MOSFET is converted into a detected voltage signal at a connection node between said sensing MOSFET and said converting MOSFET; a gate drive means outputting a gate voltage, which is supplied in common to said gate of said main MOSFET and said gate of said sensing MOSFET, a reference voltage generating means having an output for generating a reference voltage; and a comparing means having a first input connected to said connection node between said sensing MOSFET and said converting MOSFET so as to receive said detected voltage signal, and a second input connected to said output of said reference voltage generating means to receive said reference voltage, for generating an output signal indicative of the result of comparison of said detected voltage signal with said reference voltage, said output signal being fed back to said gate drive means so that said gate drive means controls said gate voltage in order to prevent an overcurrent from flowing though the power MOSFET.

Claim 9

A power MOSFET device comprising: a first terminal and a second terminal which are connected in series with a load resistor between a high voltage power supply voltage and a low voltage power supply voltage; a main MOSFET having a pair of current path ends, a gate and a back gate, one of said pair of current path ends being connected to said first terminal, the other of said pair of current path ends being connected to said second terminal, said back gate being connected to a selected one of said first terminal and said second terminal; a series circuit composed of a sensing MOSFET and a converting MOSFET connected in series to each other, said series circuit being connected in parallel to said main MOSFET between said first terminal and said second terminal, said sensing MOSFET having a pair of current path ends, a gate and a back gate, one of said pair of current path ends being connected to one of said first terminal and said second terminal, said back gate being connected to said selected one of said first terminal and said second terminal, said converting MOSFET having a gate and a pair of current path ends, said gate and one of said pair of current path ends being connected to the other of said pair of current path ends of said sensing MOSFET, the other of said pair of current path ends of said converting MOSFET being connected to the other of said first terminal and said second terminal, so that a shunted current flowing through said sensing MOSFET is converted into a detected voltage signal at a connection node between said sensing MOSFET and said converting MOSFET; a gate drive means outputting a gate voltage, which is supplied in common to said gate of said main MOSFET and said gate of said sensing MOSFET, a reference voltage generating means having an output for generating a reference voltage; and a comparing means having a first input connected to said connection node between said sensing MOSFET and said converting MOSFET so as to receive said detected voltage signal, and a second input connected to said output of said reference voltage generating means to receive said reference voltage, for generating an output signal indicative of the result of comparison of said detected voltage signal with said reference voltage, said output signal being fed back to said gate drive means so that said gate drive means controls said gate voltage in order to prevent an overcurrent from flowing though the power MOSFET.

Claim 10

A power MOSFET device claimed in claim 7 wherein said converting MOSFET is an n-channel MOSFET having a drain and a gate connected in common to the other of said pair of current path ends of said sensing MOSFET, said source of said sensing MOSFET, and a source and a back gate connected in common to the other of said first terminal and said second terminal.

Claim 11

A power MOSFET device claimed in claim 7 wherein said converting MOSFET is a p-channel MOSFET having a source, a gate and a back gate connected in common to the other of said pair of current path ends of said sensing MOSFET, and a drain connected to the other of said first terminal and said second terminal.

Claim 12

A power MOSFET device claimed in claim 7 wherein said reference voltage generating means includes a first resistor having one end connected to receive said gate voltage outputted from said gate drive means, a Zener diode having a cathode connected to the other end of said first resistor and an anode connected to said second terminal, a second resistor having one end connected to said cathode of said Zener diode, and a reference voltage generating MOSFET having a drain and a gate connected in common to the other end of said second resistor and a source and a back gate connected in common to said second terminal, said reference voltage being outputted from a connection node between said second resistor and said reference voltage generating MOSFET, said reference voltage generating MOSFET having a current-voltage characteristics similar to said converting MOSFET.

Claim 13

A power MOSFET device claimed in claim 10 wherein said converting MOSFET is an n-channel MOSFET having a drain and a gate connected in common to the other of said pair of current path ends of said sensing MOSFET, and a source and a back gate connected in common to the other of said first terminal and said second terminal, and said reference voltage generating MOSFET is also an n-channel MOSFET.

Claim 14

A power MOSFET device claimed in claim 7 wherein said reference voltage generating means includes a first resistor having one end connected to receive said gate voltage outputted from said gate drive means, a Zener diode having a cathode connected to the other end of said first resistor and an anode connected to said second terminal, a second resistor having one end connected to said cathode of said Zener diode, and a reference voltage generating MOSFET having a source, a gate and a back gate connected in common to the other end of said second resistor and a drain connected to said second terminal, said reference voltage being outputted from a connection node between said second resistor and said reference voltage generating MOSFET, said reference voltage generating MOSFET having a current-voltage characteristics similar to said converting MOSFET.

Claim 15

A power MOSFET device claimed in claim 12 wherein said converting MOSFET is a p-channel MOSFET having a source, a gate and a back gate connected in common to the other of said pair of current path ends of said sensing MOSFET, and a drain connected to the other of said first terminal and said second terminal, and said reference voltage generating MOSFET is also a p-channel MOSFET.

Claim 16

A power MOSFET device comprising: a first terminal and a second terminal which are connected in series with a load resistor between a high voltage power supply voltage and a low voltage power supply voltage; a main MOSFET having a drain connected to said first terminal, and a source and a back gate connected in common to said second terminal; a series circuit composed of a sensing MOSFET having a drain connected to said first terminal and a back gate connected to said second terminal, and a converting MOSFET having a pair of current path ends, a gate of said converting MOSFET being connected together with one of said pair of current path ends in common to a source of said sensing MOSFET, the other of said pair of current path ends being connected to said second terminal, so that a shunted current flowing through said sensing MOSFET is converted into a detected voltage signal at a connection node between said sensing MOSFET and said converting MOSFET; a gate drive means outputting a gate voltage, which is supplied in common to a gate of said main MOSFET and a gate of said sensing MOSFET, a reference voltage generating means having an output for generating a reference voltage; and a comparing means having a first input connected to said connection node between said sensing MOSFET and said converting MOSFET so as to receive said detected voltage signal, and a second input connected to said output of said reference voltage generating means to receive said reference voltage, for generating an output signal indicative of the result of comparison of said detected voltage signal with said reference voltage, said output signal being fed back to said gate drive means so that said gate drive means controls said gate voltage in order to prevent an overcurrent from flowing through the power MOSFET.

Claim 17

A power MOSFET device comprising: a first terminal and a second terminal which are connected in series with a load resistor between a high voltage power supply voltage and a low voltage power supply voltage; a main MOSFET having a drain connected to said first terminal, and a source and a back gate connected in common to said second terminal; a series circuit composed of a sensing MOSFET having a drain connected to said first terminal and a back gate connected to said second terminal, and a converting MOSFET having a pair of current path ends, a gate of said converting MOSFET being connected together with one of said pair of current path ends in common to a source of said sensing MOSFET, the other of said pair of current path ends being connected to said second terminal, so that a shunted current flowing through said sensing MOSFET is converted into a detected voltage signal at a connection node between said sensing MOSFET and said converting MOSFET; a gate drive means outputting a gate voltage, which is supplied in common to a gate of said main MOSFET and a gate of said sensing MOSFET, a reference voltage generating means having an output for generating a reference voltage; and a comparing means having a first input connected to said connection node between said sensing MOSFET and said converting MOSFET so as to receive said detected voltage signal, and a second input connected to said output of said reference voltage generating means to receive said reference voltage, for generating an output signal indicative of the result of comparison of said detected voltage signal with said reference voltage, said output signal being fed back to said gate drive means so that said gate drive means controls said gate voltage in order to prevent an overcurrent from flowing through the power MOSFET.

Claim 18

A power MOSFET device claimed in claim 14 wherein said reference voltage generating means includes a first resistor having one end connected to receive said gate voltage outputted from said gate drive means, a Zener diode having a cathode connected to the other end of said first resistor and an anode connected to said second terminal, a second resistor having one end connected to said cathode of said Zener diode, and a reference voltage generating MOSFET having a drain and a gate connected in common to the other end of said second resistor and a source and a back gate connected in common to said second terminal, said reference voltage being outputted from a connection node between said second resistor and said reference voltage generating MOSFET, said reference voltage generating MOSFET having a current-voltage characteristics similar to said converting MOSFET.

Claim 19

A power MOSFET device claimed in claim 15 wherein said converting MOSFET is an n-channel MOSFET having a drain and a gate connected in common to said source of said sensing MOSFET, and a source and a back gate connected in common to said second terminal, and said reference voltage generating MOSFET is also an n-channel MOSFET.

Claim 20

A power MOSFET device claimed in claim 14 wherein said reference voltage generating means includes a first resistor having one end connected to receive said gate voltage outputted from said gate drive means, a Zener diode having a cathode connected to the other end of said first resistor and an anode connected to said second terminal, a second resistor having one end connected to said cathode of said Zener diode, and a reference voltage generating MOSFET having a source, a gate and a back gate connected in common to the other end of said second resistor and a drain connected to said second terminal, said reference voltage being outputted from a connection node between said second resistor and said reference voltage generating MOSFET, said reference voltage generating MOSFET having a current-voltage characteristics similar to said converting MOSFET.

Claim 21

A power MOSFET device claimed in claim 17 wherein said converting MOSFET is a p-channel MOSFET having a source, a gate and a back gate connected in common to said source of said sensing MOSFET, and a drain connected to said second terminal, and said reference voltage generating MOSFET is also a p-channel MOSFET.