US4908682A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Power MOSFET having a current sensing element of high accuracy
Assignee: NEC Electronics Corp
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Filing: 1989-04-17
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Granted: 1990-03-13
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Expires: 2009-04-17
Abstract
Abstract Herein disclosed is a vertical power MOSFET having a current sensing MOSFET, in which the base region of the current sensing MOSFET is electrically connected with the base region of the vertical MOSFET whereas the current leading-out electrode of the current sensing MOSFET is connected with only the source region of the current sensing MOSFET.
Inventors
- 👤 Mitsuasa Takahashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 15:02
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/64; H10D30/66; H10D30/669; H10D62/00; H10D62/10; H10D62/124; H10D62/126; H10D62/127
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
229 words
A MOS field effect transistor comprising: a drain region of one conductivity type; a plurality of first base regions of the opposite conductivity type formed in one principal surface of said drain region; a plurality of first source regions of said one conductivity type formed in said first base regions; a first gate electrode formed over first portions of said first base regions, said first portions being sandwiched between said first source regions and said drain region; a source electrode connected commonly with said plurality of first base regions and said plurality of first source regions; a second base region of said opposite conductivity type formed in said one principal surface of said drain region; a second source region of said one conductivity type formed in said second base region; a second gate electrode formed over a second portion of said second base region, said second portion being sandwiched between said second source region and said drain region, said second gate electrode being electrically connected with said first gate electrode; a base electrode electrically connected with said second base region and said first source electrode, said base electrode being not connected with said second source region; a current leading-out electrode electrically connected with said second source region, said current leading-out electrode being not connected with said second base region; and a drain electrode electrically connected with said drain region.
Claim 2
Dependent Claim
229 words
A MOS field effect transistor comprising: a drain region of one conductivity type; a plurality of first base regions of the opposite conductivity type formed in one principal surface of said drain region; a plurality of first source regions of said one conductivity type formed in said first base regions; a first gate electrode formed over first portions of said first base regions, said first portions being sandwiched between said first source regions and said drain region; a source electrode connected commonly with said plurality of first base regions and said plurality of first source regions; a second base region of said opposite conductivity type formed in said one principal surface of said drain region; a second source region of said one conductivity type formed in said second base region; a second gate electrode formed over a second portion of said second base region, said second portion being sandwiched between said second source region and said drain region, said second gate electrode being electrically connected with said first gate electrode; a base electrode electrically connected with said second base region and said first source electrode, said base electrode being not connected with said second source region; a current leading-out electrode electrically connected with said second source region, said current leading-out electrode being not connected with said second base region; and a drain electrode electrically connected with said drain region.
Claim 3
Dependent Claim
42 words
A MOS field effect transistor as claimed in claim 1, wherein said MOS field effect transistor is of vertical type, in which said drain electrode is formed on the other principal surface opposite to said one principal surface of said drain region.
Claim 4
Dependent Claim
24 words
A MOS field effect transistor as claimed in claim 2, wherein said second base region is surrounded by said plurality of first base regions.
Claim 5
Dependent Claim
187 words
A vertical MOSFET comprising: a semiconductor substrate acting as a drain; a first vertical MOSFET formed in said semiconductor substrate and having a plurality of first base regions and a plurality of first source regions in one principal surface of said semiconductor substrate; a second vertical MOSFET for current sensing formed in said semiconductor substrate and having a second base region and a second source region in said one principal surface of said semiconductor substrate, said second base region being electrically connected with said first base regions, said second vertical MOSFET further having a current leading-out electrode electrically connected with said second source region, said current leading-out electrode being not connected with said second base region; a gate electrode formed in said principal surface of said semiconductor substrate so that it may be used commonly for said first vertical MOSFET and said second vertical MOSFET; a source electrode electrically connected commonly with said plurality of said first base regions and said plurality of said first source regions; and a drain electrode formed in the other principal surface opposite to said one principal plane of said semiconductor substrate.
Claim 6
Dependent Claim
187 words
A vertical MOSFET comprising: a semiconductor substrate acting as a drain; a first vertical MOSFET formed in said semiconductor substrate and having a plurality of first base regions and a plurality of first source regions in one principal surface of said semiconductor substrate; a second vertical MOSFET for current sensing formed in said semiconductor substrate and having a second base region and a second source region in said one principal surface of said semiconductor substrate, said second base region being electrically connected with said first base regions, said second vertical MOSFET further having a current leading-out electrode electrically connected with said second source region, said current leading-out electrode being not connected with said second base region; a gate electrode formed in said principal surface of said semiconductor substrate so that it may be used commonly for said first vertical MOSFET and said second vertical MOSFET; a source electrode electrically connected commonly with said plurality of said first base regions and said plurality of said first source regions; and a drain electrode formed in the other principal surface opposite to said one principal plane of said semiconductor substrate.
Claim 7
Dependent Claim
23 words
A vertical MOSFET as claimed in claim 4, wherein said second vertical MOSFET is formed at the center of said first vertical MOSFET.
Claim 8
Dependent Claim
51 words
A vertical MOSFET as claimed in claim 5, further comprising: a first connection pad electrically connected with said second base region ad formed at the center of said semiconductor substrate; and a second connection pad electrically connected with said current leading-out electrode and formed at the center of said semiconductor substrate.
References Cited (Backward Citations)
US4680604A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1993-03-12 | 1993-09-11 | 1994-03-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-03-12 | 1997-09-11 | 1998-03-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-03-12 | 2001-09-11 | 2002-03-13 | $7700.00 | Window Closed / Lapsed |