US5767536A
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II-VI group compound semiconductor device
Assignee: Sharp Corp
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Filing: 1996-11-25
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Granted: 1998-06-16
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Expires: 2016-11-25
Abstract
Abstract A II-VI group compound semiconductor device comprising a Zn X Mg 1-X S Y Se 1-Y (0≦X≦1, 0≦Y≦1) semiconductor layer, an intermediate layer comprising a compound of an element constituting the semiconductor layer and an additive element of Cd, Te or Hg formed on the semiconductor layer, and an electrode layer containing Ni, Pt or Pd formed on the intermediate layer.
Inventors
- 👤 Masanori Murakami
- 👤 Yasuo Koide
- 👤 Nobuaki Teraguchi
- 👤 Yoshitaka Tomomura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 19:21
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/04; H01S5/042; H01S5/0425; H01S5/04252; H10; H10D; H10D62/00; H10D62/80; H10D62/86; H10D62/862; H10D64/00; H10D64/01; H10D64/011; H10D64/60; H10D64/62; H10D64/64; H10H; H10H20/00; H10H20/80; H10H20/83; H10H20/832; H10P; H10P95/00; H10P95/50; H10H20/81; H10H20/822; H10H20/823
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
93 words
A II-VI group compound semiconductor device comprising: a Zn X Mg 1-X S Y Se 1-Y (0≦X≦1, 0≦Y≦1) semiconductor layer; an intermediate layer formed on said semiconductor layer, wherein said intermediate layer comprises a compound, said compound comprising at least one of the elements constituting said semiconductor layer and an additive element being selected from the group consisting of Cd, Te, and Hg; and an electrode layer comprising Ni formed on said intermediate layer wherein said electrode layer comprises an intermetallic compound of Ni and said additive element contained in said intermediate layer.
Claim 2
Dependent Claim
93 words
A II-VI group compound semiconductor device comprising: a Zn X Mg 1-X S Y Se 1-Y (0≦X≦1, 0≦Y≦1) semiconductor layer; an intermediate layer formed on said semiconductor layer, wherein said intermediate layer comprises a compound, said compound comprising at least one of the elements constituting said semiconductor layer and an additive element being selected from the group consisting of Cd, Te, and Hg; and an electrode layer comprising Ni formed on said intermediate layer wherein said electrode layer comprises an intermetallic compound of Ni and said additive element contained in said intermediate layer.
Claim 3
Dependent Claim
96 words
A II-VI group compound semiconductor device comprising: a Zn X Mg 1-X S Y Se 1-Y (0≦X≦1, 0≦Y≦1) semiconductor layer; an intermediate layer formed on said semiconductor layer, wherein said intermediate layer comprises a compound, said compound comprising at least one of the elements constituting said semiconductor layer and an additive element being selected from the group consisting of Cd, Te, and Hg; and an electrode layer comprising Ni formed on said intermediate layer wherein said electrode layer comprises an intermetallic compound of Ni and said at least one of the elements constituting said intermediate layer.
Claim 4
Dependent Claim
96 words
A II-VI group compound semiconductor device comprising: a Zn X Mg 1-X S Y Se 1-Y (0≦X≦1, 0≦Y≦1) semiconductor layer; an intermediate layer formed on said semiconductor layer, wherein said intermediate layer comprises a compound, said compound comprising at least one of the elements constituting said semiconductor layer and an additive element being selected from the group consisting of Cd, Te, and Hg; and an electrode layer comprising Ni formed on said intermediate layer wherein said electrode layer comprises an intermetallic compound of Ni and said at least one of the elements constituting said intermediate layer.
Claim 5
Dependent Claim
103 words
A II-VI group compound semiconductor device comprising: a Zn X Mg 1-X S Y Se 1-Y (0≦X≦1, 0≦Y≦1) semiconductor layer; an intermediate layer formed on said semiconductor layer, said intermediate layer comprising a compound of at least one of the elements constituting said semiconductor layer and an additive element of Cd; and an electrode layer formed on said intermediate layer, said electrode layer comprising a metal selected from the group consisting of Ni and Pd, wherein said electrode layer comprises an intermetallic compound of said additive element constituting said intermediate layer and a metal selected from the group consisting of Ni and Pd.
Claim 6
Dependent Claim
103 words
A II-VI group compound semiconductor device comprising: a Zn X Mg 1-X S Y Se 1-Y (0≦X≦1, 0≦Y≦1) semiconductor layer; an intermediate layer formed on said semiconductor layer, said intermediate layer comprising a compound of at least one of the elements constituting said semiconductor layer and an additive element of Cd; and an electrode layer formed on said intermediate layer, said electrode layer comprising a metal selected from the group consisting of Ni and Pd, wherein said electrode layer comprises an intermetallic compound of said additive element constituting said intermediate layer and a metal selected from the group consisting of Ni and Pd.
Claim 7
Dependent Claim
102 words
A II-VI group compound semiconductor device comprising: a Zn X Mg 1-X S Y Se 1-Y (0≦X≦1, 0≦Y≦1) semiconductor layer; an intermediate layer formed on said semiconductor layer, said intermediate layer comprising a compound of at least one of the elements constituting said semiconductor layer and an additive element of Cd; and an electrode layer formed on said intermediate layer, said electrode layer comprising a metal selected from the group consisting of Ni and Pd, wherein said electrode layer comprises an intermetallic compound of an element constituting said semiconductor layer and a metal selected from the group consisting of Ni and Pd.
Claim 8
Dependent Claim
102 words
A II-VI group compound semiconductor device comprising: a Zn X Mg 1-X S Y Se 1-Y (0≦X≦1, 0≦Y≦1) semiconductor layer; an intermediate layer formed on said semiconductor layer, said intermediate layer comprising a compound of at least one of the elements constituting said semiconductor layer and an additive element of Cd; and an electrode layer formed on said intermediate layer, said electrode layer comprising a metal selected from the group consisting of Ni and Pd, wherein said electrode layer comprises an intermetallic compound of an element constituting said semiconductor layer and a metal selected from the group consisting of Ni and Pd.
Claim 9
Dependent Claim
109 words
A II-VI group compound semiconductor device comprising: a Zn X Mg 1-X S Y Se 1-Y (0≦X≦1, 0≦Y≦1) semiconductor layer; an intermediate layer formed on said semiconductor layer, wherein said intermediate layer comprises a compound, said compound comprising at least one of the elements constituting said semiconductor layer and an additive element being selected from the group consisting of Cd, Te and Hg; and an electrode layer comprising Ni, Pt and Pd, formed on said intermediate layer wherein said electrode layer comprises an intermetallic compound of at least one of the elements constituting said intermediate layer and a metal selected from the group comprising of Ni, Pt and Pd.
Claim 10
Dependent Claim
109 words
A II-VI group compound semiconductor device comprising: a Zn X Mg 1-X S Y Se 1-Y (0≦X≦1, 0≦Y≦1) semiconductor layer; an intermediate layer formed on said semiconductor layer, wherein said intermediate layer comprises a compound, said compound comprising at least one of the elements constituting said semiconductor layer and an additive element being selected from the group consisting of Cd, Te and Hg; and an electrode layer comprising Ni, Pt and Pd, formed on said intermediate layer wherein said electrode layer comprises an intermetallic compound of at least one of the elements constituting said intermediate layer and a metal selected from the group comprising of Ni, Pt and Pd.
Claim 11
Dependent Claim
29 words
The semiconductor device as recited in claim 5, wherein said electrode layer further comprises an intermetallic compound of at least one of NiCd, NiHg, NiTe, PdCd, PdHg and PdTe.
Claim 12
Dependent Claim
20 words
The semiconductor device as recited in claim 5, wherein said additive element is Te and said electrode layer comprises Pd.
Claim 13
Dependent Claim
109 words
A II-VI group compound semiconductor device comprising: a Zn X Mg 1-X S Y Se 1-Y (0≦X≦1, 0≦Y≦1) semiconductor layer; an intermediate layer formed on said semiconductor layer, wherein said intermediate layer comprises a compound, said compound comprising at least one of the elements constituting said semiconductor layer and an additive element being selected from the group consisting of Cd, Te and Hg; and an electrode layer comprising Ni, Pt and Pd, formed on said intermediate layer wherein said electrode layer comprises an intermetallic compound of at least one of the elements constituting said semiconductor layer and a metal selected from the group comprising of Ni, Pt and Pd.
Claim 14
Dependent Claim
109 words
A II-VI group compound semiconductor device comprising: a Zn X Mg 1-X S Y Se 1-Y (0≦X≦1, 0≦Y≦1) semiconductor layer; an intermediate layer formed on said semiconductor layer, wherein said intermediate layer comprises a compound, said compound comprising at least one of the elements constituting said semiconductor layer and an additive element being selected from the group consisting of Cd, Te and Hg; and an electrode layer comprising Ni, Pt and Pd, formed on said intermediate layer wherein said electrode layer comprises an intermetallic compound of at least one of the elements constituting said semiconductor layer and a metal selected from the group comprising of Ni, Pt and Pd.
Claim 15
Dependent Claim
33 words
The semiconductor device as recited in claim 8, wherein said electrode layer further comprises an intermetallic compound of Ni or Pd and said at least one of the elements consisting said semiconductor layer.
Claim 16
Dependent Claim
20 words
The semiconductor device as recited in claim 8, wherein said additive element is Te and said electrode layer comprises Pd.
Claim 17
Dependent Claim
111 words
A II-VI group compound semiconductor device comprising: a Zn X Mg 1-X S Y Se 1-Y (0≦X≦1, 0≦Y≦1) semiconductor layer; an intermediate layer formed on said semiconductor layer, wherein said intermediate layer comprises a compound, said compound comprising at least one of the elements constituting said semiconductor layer and an additive element being selected from the group consisting of Cd, Te and Hg; an intermetallic compound layer of at least one of the elements constituting said intermediate layer and a metal selected from the group consisting of Ni, Pt and Pd, formed on said intermediate layer; and an electrode layer comprising Ni, Pt and Pd, formed on said intermetallic compound layer.
Claim 18
Dependent Claim
111 words
A II-VI group compound semiconductor device comprising: a Zn X Mg 1-X S Y Se 1-Y (0≦X≦1, 0≦Y≦1) semiconductor layer; an intermediate layer formed on said semiconductor layer, wherein said intermediate layer comprises a compound, said compound comprising at least one of the elements constituting said semiconductor layer and an additive element being selected from the group consisting of Cd, Te and Hg; an intermetallic compound layer of at least one of the elements constituting said intermediate layer and a metal selected from the group consisting of Ni, Pt and Pd, formed on said intermediate layer; and an electrode layer comprising Ni, Pt and Pd, formed on said intermetallic compound layer.
Claim 19
Dependent Claim
26 words
The semiconductor device as recited in claim 11, wherein said intermetallic compound layer further comprises at least one of NiCd, NiHg, NiTe, PdCd, PdHg and PdTe.
Claim 20
Dependent Claim
29 words
The semiconductor device as recited in claim 11, wherein said additive element is selected from the group consisting of Cd, Te and Hg, and said electrode layer comprises Ni.
Claim 21
Dependent Claim
30 words
The semiconductor device as recited in claim 11, wherein said additive element is Cd, and said electrode layer comprises a metal selected from the group consisting of Ni and Pd.
Claim 22
Dependent Claim
20 words
The semiconductor device as recited in claim 11, wherein said additive element is Te and said electrode layer comprises Pd.
Claim 23
Dependent Claim
111 words
A II-VI group compound semiconductor device comprising: a Zn X Mg 1-X S Y Se 1-Y (0≦X≦1, 0≦Y≦1) semiconductor layer; an intermediate layer formed on said semiconductor layer, wherein said intermediate layer comprises a compound, said compound comprising at least one of the elements constituting said semiconductor layer and an additive element being selected from the group consisting of Cd, Te and Hg; an intermetallic compound layer of at least one of the elements constituting said semiconductor layer and a metal selected from the group consisting of Ni, Pt and Pd, formed on said intermediate layer; and an electrode layer comprising Ni, Pt and Pd, formed on said intermetallic compound layer.
Claim 24
Dependent Claim
111 words
A II-VI group compound semiconductor device comprising: a Zn X Mg 1-X S Y Se 1-Y (0≦X≦1, 0≦Y≦1) semiconductor layer; an intermediate layer formed on said semiconductor layer, wherein said intermediate layer comprises a compound, said compound comprising at least one of the elements constituting said semiconductor layer and an additive element being selected from the group consisting of Cd, Te and Hg; an intermetallic compound layer of at least one of the elements constituting said semiconductor layer and a metal selected from the group consisting of Ni, Pt and Pd, formed on said intermediate layer; and an electrode layer comprising Ni, Pt and Pd, formed on said intermetallic compound layer.
Claim 25
Dependent Claim
34 words
The semiconductor device as recited in claim 16, wherein said intermetallic compound layer further comprises an intermetallic compound of Ni or Pd and said at least one of the elements consisting said semiconductor layer.
Claim 26
Dependent Claim
29 words
The semiconductor device as recited in claim 16, wherein said additive element is selected from the group consisting of Cd, Te and Hg, and said electrode layer comprises Ni.
Claim 27
Dependent Claim
30 words
The semiconductor device as recited in claim 16, wherein said additive element is Cd, and said electrode layer comprises a metal selected from the group consisting of Ni and Pd.
Claim 28
Dependent Claim
20 words
The semiconductor device as recited in claim 16, wherein said additive element is Te and said electrode layer comprises Pd.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2001-06-15 | 2001-12-15 | 2002-06-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-06-15 | 2005-12-15 | 2006-06-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-06-15 | 2009-12-15 | 2010-06-16 | $7700.00 | Window Closed / Lapsed |