Patent US5767017A successfully refreshed from Google Patents.
US5767017A
Expired / Lapsed
US
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Selective removal of vertical portions of a film
Assignee: International Business Machines Corp
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Filing: 1995-12-21
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Granted: 1998-06-16
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Expires: 2015-12-21
Abstract
Abstract A body is provided with a substantially horizontal surface and a substantially vertical surface. A film is formed on the body with a substantially horizontal portion on the substantially horizontal surface, a substantially vertical portion on the substantially vertical surface, and a corner region joining the substantially horizontal and substantially vertical portions. The corner region and the substantially vertical portion of the film are removed while the body and the substantially horizontal portion of the film are left substantially intact. A high density plasma with a fluorocarbon-based etching gas may be used to remove the vertical portion and corner region.
Inventors
- 👤 Michael David Armacost
- 👤 Steven Alfred Grundon
- 👤 David Laurant Harmon
- 👤 Donald McAlpine Kenney
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:18
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/40; H10P76/408; H10P76/4083; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10P50/69; H10P50/691; H10P50/693; H10P50/694; H10P50/71; H10P50/73
Claims Analysis
Total Claims: 37
Claim 1
Independent Claim
77 words
A method for etching a film on a body, comprising the steps of: providing a body with a substantially horizontal surface and a substantially vertical surface, the body having a film formed thereupon, the film having a substantially horizontal portion on the substantially horizontal surface, a substantially vertical portion on the substantially vertical surface; and etching the substantially vertical portion of the film while leaving the body and the substantially horizontal portion of the film substantially intact.
Claim 2
Independent Claim
77 words
A method for etching a film on a body, comprising the steps of: providing a body with a substantially horizontal surface and a substantially vertical surface, the body having a film formed thereupon, the film having a substantially horizontal portion on the substantially horizontal surface, a substantially vertical portion on the substantially vertical surface; and etching the substantially vertical portion of the film while leaving the body and the substantially horizontal portion of the film substantially intact.
Claim 3
Dependent Claim
12 words
The method of claim 1 wherein the body is a semiconductor substrate.
Claim 4
Dependent Claim
10 words
The method of claim 1 wherein the film is conformal.
Claim 5
Dependent Claim
17 words
The method of claim 1 wherein the etching step is performed using a high density plasma process.
Claim 6
Dependent Claim
33 words
The method of claim 4 wherein the high density plasma process uses an etching gas comprised mainly of a fluorocarbon compound C x F y where x and y are greater than zero.
Claim 7
Dependent Claim
15 words
The method of claim 5 wherein the fluorocarbon compound is C 2 F 6 .
Claim 8
Dependent Claim
13 words
The method of claim 5 wherein the fluorocarbon compound is CF 4 .
Claim 9
Dependent Claim
14 words
The method of claim 7 wherein the etching gas also includes SiF 4 .
Claim 10
Dependent Claim
27 words
The method of claim 1 wherein the film comprises a material which promotes formation of a protective layer on the substantially horizontal portions during the removing step.
Claim 11
Dependent Claim
13 words
The method of claim 9 wherein the protective layer is a carbonaceous polymer.
Claim 12
Dependent Claim
11 words
The method of claim 9 wherein the film is a nitride.
Claim 13
Dependent Claim
11 words
The method of claim 11 wherein the film is silicon nitride.
Claim 14
Dependent Claim
11 words
The method of claim 11 wherein the film is an oxynitride.
Claim 15
Independent Claim
41 words
A method for selectively removing a sidewall, comprising the steps of: providing a body with a substantially horizontal surface and a substantially vertical surface, the sidewall formed on the substantially vertical surface; etching the sidewall while leaving the body substantially intact.
Claim 16
Independent Claim
41 words
A method for selectively removing a sidewall, comprising the steps of: providing a body with a substantially horizontal surface and a substantially vertical surface, the sidewall formed on the substantially vertical surface; etching the sidewall while leaving the body substantially intact.
Claim 17
Dependent Claim
12 words
The method of claim 14 wherein the body is a semiconductor substrate.
Claim 18
Dependent Claim
16 words
The method of claim 14 wherein the sidewall is etched using a high density plasma process.
Claim 19
Dependent Claim
33 words
The method of claim 16 wherein the high density plasma process uses an etching gas comprised mainly of a fluorocarbon compound C x F y where x and y are greater than zero.
Claim 20
Dependent Claim
15 words
The method of claim 17 wherein the fluorocarbon compound is C 2 F 6 .
Claim 21
Dependent Claim
13 words
The method of claim 17 wherein the fluorocarbon compound is CF 4 .
Claim 22
Dependent Claim
14 words
The method of claim 18 wherein the etching gas also includes SiF 4 .
Claim 23
Dependent Claim
25 words
The method of claim 14 wherein the body comprises a material which promotes formation of a protective layer on the body during the removing step.
Claim 24
Dependent Claim
13 words
The method of claim 21 wherein the protective layer is a carbonaceous polymer.
Claim 25
Independent Claim
109 words
A method of making a structure with sub-micron lateral dimensions, the method comprising the steps of: providing a substrate having a substantially vertical surface and a substantially horizontal surface; forming a film on the substrate, the film having a substantially horizontal portion on the substantially horizontal surface, a substantially vertical portion on the substantially vertical surface; etching the substantially vertical portion of the film while leaving the substrate and the substantially horizontal portion of the film substantially intact; using the vertical surface and the substantially horizontal portion together as a mask with an opening having a dimension in the sub-micron range to create the structure with sub-micron lateral dimensions.
Claim 26
Independent Claim
109 words
A method of making a structure with sub-micron lateral dimensions, the method comprising the steps of: providing a substrate having a substantially vertical surface and a substantially horizontal surface; forming a film on the substrate, the film having a substantially horizontal portion on the substantially horizontal surface, a substantially vertical portion on the substantially vertical surface; etching the substantially vertical portion of the film while leaving the substrate and the substantially horizontal portion of the film substantially intact; using the vertical surface and the substantially horizontal portion together as a mask with an opening having a dimension in the sub-micron range to create the structure with sub-micron lateral dimensions.
Claim 27
Dependent Claim
10 words
The method of claim 23 wherein the film is conformal.
Claim 28
Dependent Claim
17 words
The method of claim 23 wherein the removing step is performed using a high density plasma process.
Claim 29
Dependent Claim
33 words
The method of claim 25 wherein the high density plasma process uses an etching gas comprised mainly of a fluorocarbon compound C x F y where x and y are greater than zero.
Claim 30
Dependent Claim
15 words
The method of claim 26 wherein the fluorocarbon compound is C 2 F 6 .
Claim 31
Dependent Claim
13 words
The method of claim 26 wherein the fluorocarbon compound is CF 4 .
Claim 32
Dependent Claim
14 words
The method of claim 7 wherein the etching gas also includes SiF 4 .
Claim 33
Dependent Claim
27 words
The method of claim 23 wherein the film comprises a material which promotes formation of a protective layer on the substantially horizontal portion during the removing step.
Claim 34
Dependent Claim
13 words
The method of claim 30 wherein the protective layer is a carbonaceous polymer.
Claim 35
Dependent Claim
11 words
The method of claim 30 wherein the film is a nitride.
Claim 36
Dependent Claim
11 words
The method of claim 32 wherein the film is silicon nitride.
Claim 37
Dependent Claim
11 words
The method of claim 32 wherein the film is an oxynitride.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-06-15 | 2001-12-15 | 2002-06-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-06-15 | 2005-12-15 | 2006-06-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-06-15 | 2009-12-15 | 2010-06-16 | $7700.00 | Window Closed / Lapsed |