Patent US5760480A successfully refreshed from Google Patents.
US5760480A
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Low RC interconnection
Assignee: GlobalFoundries Inc
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Filing: 1995-09-20
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Granted: 1998-06-02
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Expires: 2015-09-20
Abstract
Abstract A low RC delay interconnection pattern is formed with a low resistivity metal, such as copper, and a low dielectric constant material, such as organic polymers. An intermediate bonding layer is formed between the low resistivity metal and low dielectric constant material employing an adhesion promoter, such as a silane-based adhesion promoter. The adhesion promoter can be applied between the metal and dielectric layers or incorporated in the dielectric layer.
Inventors
- 👤 Lu You
- 👤 Robin W. Cheung
- 👤 Simon S. Chan
- 👤 Richard J. Huang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:47
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/10; H10W74/111; H10W74/127; H10W20/00; H10W20/40; H10W20/45; H10W20/48; H10W20/495
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
36 words
A semiconductor device comprising: a layer of dielectric material; a metal interconnect pattern; and an intermediate layer completely surrounding the metal interconnect pattern; wherein the metal is bonded to the dielectric material by the intermediate layer.
Claim 2
Dependent Claim
36 words
A semiconductor device comprising: a layer of dielectric material; a metal interconnect pattern; and an intermediate layer completely surrounding the metal interconnect pattern; wherein the metal is bonded to the dielectric material by the intermediate layer.
Claim 3
Dependent Claim
22 words
The semiconductor device according to claim 1, wherein the intermediate layer comprises the reaction product of an adhesion promoter and the metal.
Claim 4
Dependent Claim
15 words
The semiconductor device according to claim 2, wherein the adhesion promoter comprises a silane-based organic.
Claim 5
Dependent Claim
21 words
The semiconductor device according to claim 3, wherein the silane-based organic is selected from the group consisting of 3-aminopropyltriethoxysilane and 3-methacryloxypropyltrimethoxysilane.
Claim 6
Dependent Claim
24 words
The semiconductor device according to claim 3, wherein the silane-based organic compound comprises a vinyl, chloropropyl, epoxy, diamine, mercapto and/or cationic stryryl organofunctional group.
Claim 7
Dependent Claim
40 words
The semiconductor device according to claim 1, wherein the intermediate bonding layer consists essentially of an adhesion promoter, the reaction product of the metal and the adhesion promoter, and the reaction product of the adhesion promoter and the dielectric material.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-06-01 | 2001-12-01 | 2002-06-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-06-01 | 2005-12-01 | 2006-06-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-06-01 | 2009-12-01 | 2010-06-02 | $7700.00 | Window Closed / Lapsed |