EP0618617A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Process for metallized vias in polyimide
Assignee: International Business Machines Corp
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Filing: 1994-03-04
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Granted: —
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Expires: 2014-03-04
Abstract
Abstract The process includes depositing a polyimide precursor (1), then a silane (2) and finally a metal (4), after patterning the polyimide (1) and silane (2). The sandwich is heated to completely imidize the polyimide (1), crosslink the silane (2) and anneal the metal (4) simultaneously. The excess metal (4) overlying the polyimide (1) between the vias (3) is removed by chemical mechanical polishing using the crosslinked silane (2) as a polish stop.
Inventors
- 👤 Loretta Jean O'connor
- 👤 Rosemary Ann Previti-Kelly
- 👤 Thomas Joseph Reen
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 06:25
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/093; H10W20/097; H05; H05K; H05K1/00; H05K1/02; H05K1/03; H05K1/0313; H05K1/032; H05K1/0346; H05K3/00; H05K3/40; H05K3/4038; H05K3/4076; H05K3/46; H05K3/4644; H05K3/4673; H05K3/4676
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
277 words
A process for producing a plurality of metallized vias (3) in a polyimide layer (1) on a substrate (8) comprising the steps of: (a) applying a solution of a polyimide precursor in an inert solvent to said substrate; (b) heating, in a first heating cycle, said solution of polyimide precursor at a combination of temperature and pressure sufficient to volatilize said inert solvent but insufficient to completely convert said polyimide precursor to polyimide; and continuing said first heating cycle for a period of time at least sufficient to provide a mechanically stable layer; (c) applying a solution containing a polyaminoalkylalkoxysilane (PAAS) in an inert, nonaqueous solvent to said mechanically stable layer of polyimide precursor; (d) heating, in a second heating cycle, said solution of a PAAS at a combination of temperature and pressure sufficient to volatilize said inert solvent but insufficient to completely imidize said polyimide precursor and insufficient to cleave a significant portion of amino functions in said PAAS, and continuing said second heating cycle for a period of time at least sufficient to provide a mechanically stable silane layer; (e) patterning both of said layers of polyimide precursor and silane with a plurality of trenches (3); (f) depositing sufficient metal on said substrate to at least fill said trenches; (g) heating, in a third heating cycle, said metal, said silane layer and said polyimide precursor layer at a temperature and for a time sufficient to completely imidize said polyimide and to convert said silane layer to a silsesquioxane polymer layer (2); and (h) chemical-mechanical polishing said substrate to remove all of said metal outside said trenches using said layer of silsesquioxane as a polish stop.
Claim 2
Dependent Claim
56 words
The process of claim 1 wherein said polyaminoalkylalkoxysilane has the formula: wherein R¹ is hydrogen or alkoxy of one to four carbons, R² is a linear, branched or cyclic polyaminoalkyl residue of one to eleven carbons, five to 26 hydrogens and two or three nitrogens and R³ is alkyl of one to four carbons or aryl.
Claim 3
Dependent Claim
33 words
The process of claim 1 or 2 wherein said first and second heating cycles are at from 100° to 200° C and said third heating cycle is at from 350° to 450° C.
Claim 4
Dependent Claim
18 words
The process of any one of claims 1 to 3 wherein said polyimide precursor is a polyamic acid.
Claim 5
Dependent Claim
20 words
The process of any one of the preceding claims to wherein said metal is copper or an alloy of copper.
Claim 6
Dependent Claim
14 words
The process of any one of the preceding claims wherein said PAAS is N-[3-(trimethoxysilyl)propyl]1,2-ethanediamine.
Claim 7
Dependent Claim
24 words
The process of any one of the preceding claims wherein said silsesquioxane layer is from 20 to 50 nm (200 to 500 Å) thick.
Claim 8
Dependent Claim
31 words
The process of any one of the preceding claims wherein said solution containing a PAAS also contains one or more organosilicon compounds selected from the group consisting of arylalkoxysilanes and arylsilazanes.
Claim 9
Dependent Claim
23 words
The process of claim 8 wherein said solution containing a PAAS consists essentially of a 1 to 5% solution of N-[3-(trimethoxysilyl)propyl]-1,2-ethanediamine plus phenyltriethoxysilane.
Claim 10
Dependent Claim
196 words
A process for producing a plurality of metallized vias in a preformed polyimide layer on a substrate comprising the steps of: (a) applying a solution containing a polyaminoalkylalkoxysilane (PAAS) according to claim 2 or 6 or 8 to 9 in an inert, non-aqueous solvent to said polyimide layer; (b) heating, in a first heating cycle, said solution of a PAAS at a combination of temperature and pressure sufficient to volatilize said inert solvent but insufficient to cleave a significant portion of amino functions in said PAAS, and continuing said first heating cycle for a period of time at least sufficient to provide a mechanically stable silane layer; (c) patterning both of said polyimide and said mechanically stable silane layer with a plurality of trenches; (d) depositing sufficient metal according to claim 5 to at least fill said trenches; (e) heating, in a second heating cycle, said metal, silane and polyimide at a temperature and for a time sufficient to convert said silane layer to a silsesquioxane polymer layer according to claim 7; and (f) chemical-mechanical polishing said substrate to remove all of said metal outside said trenches using said layer of silsesquioxane as a polish stop.
Claim 11
Dependent Claim
30 words
The process according of claim 10 wherein said first heating cycle is at from 100 to 200° C and said second heating cycle is at from 350° to 450° C.
Claim 12
Dependent Claim
97 words
A process for producing a plurality of metallized vias in a polyimide layer, having an upper and lower surface, comprising providing a 20 to 50 nm (200 to 500 Å) thick layer of a silsesquioxane according to claims 8 or 9, derived at least in part from a polyaminoalkylalkoxysilane (PAAS), on said upper surface of said polyimide layer and using said silsesquioxane layer as a polish stop for removing, by chemical mechanical polishing, metallization deposited on said silsesquioxane layer while leaving metallization according to claim 5 deposited in a plurality of recessed structures in said polyimide layer.
Claim 13
Dependent Claim
29 words
A semiconductor device comprising a metallized via in a polyimide layer prepared according to the process of any one of claims 1 to 9, 10 to 11 or 12.
Claim 14
Dependent Claim
52 words
A layered semiconductor device comprising: (a) at least one layer of polyimide, said layer of polyimide having a plurality of metallic inclusions; and (b) a 20 to 50 nm (200 to 500 Å) thick layer of a silsesquioxane, derived at least in part from a polyaminoalkylalkoxysilane (PAAS), overlying said layer of polyimide.
References Cited (Backward Citations)
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