US5753973A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Resin seal semiconductor package
Assignee: Renesas Electronics Corp
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Filing: 1997-02-11
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Granted: 1998-05-19
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Expires: 2017-02-11
Abstract
Abstract Bonding pads are formed on a main surface of a semiconductor chip. An insulating layer having openings located on the bonding pads is formed on the main surface of the semiconductor chip. Base metal layers are formed on the bonding pads. A buffer coat film having a portion laid on a periphery of the base metal layer is formed on the insulating layer. Connection layers are formed on the base metal layers. First conductors are formed on the connection layers. A seal resin exposing only top surfaces of the first conductors is formed. Lumpish second conductors are formed on the top surfaces of the first conductor. Thereby, a resin seal semiconductor package can be made compact and it has improved electrical characteristics and high reliability.
Inventors
- 👤 Masatoshi Yasunaga
- 👤 Shin Nakao
- 👤 Shinji Baba
- 👤 Mitsuyasu Matsuo
- 👤 Hironori Matsushima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 01:58
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/01; H10W74/019; H05; H05K; H05K3/00; H05K3/30; H05K3/303; H10P; H10P72/00; H10P72/70; H10P72/74; H10W72/00; H10W72/01; H10W72/019; H10W74/016; H10W74/10; H10W74/111; H10W90/00; H05K2201/00; H05K2201/09; H05K2201/09818; H05K2201/09909; H05K2201/10; H05K2201/10431; H05K2201/10439; H05K2201/10454; H05K2201/10484; H05K2201/20; H05K2201/2036; H05K3/32; H05K3/34; H05K3/341; H05K3/3431; H05K3/3442; H10W70/00; H10W70/01; H10W70/05; H10W70/60; H10W72/012; H10W72/01221; H10W72/01223; H10W72/01225; H10W72/01251; H10W72/01255; H10W72/071; H10W72/072; H10W72/07231; H10W72/07236; H10W72/07251; H10W72/07254; H10W72/073; H10W72/20; H10W72/241; H10W72/242; H10W72/244; H10W72/251; H10W72/252; H10W72/29; H10W72/50; H10W72/541; H10W72/5453; H10W72/551; H10W72/552; H10W72/5522; H10W72/5524; H10W72/59; H10W72/90; H10W72/931; H10W72/932; H10W72/941; H10W72/9413; H10W72/951; H10W72/952; H10W90/20; H10W90/701; H10W90/721; H10W90/724; Y; Y02; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
107 words
A semiconductor device, comprising: a semiconductor chip provided at its main surface with at least one circuit element; a connecting pad formed on said main surface of said semiconductor chip; an electrode formed on said connecting pad and having an external contact portion for external electrical connection and an internal connecting portion connected with said connecting pad; and a resin layer for covering said main surface of said semiconductor chip except said external contact portion; wherein said external contact portion of said electrode is made of solder and said internal connecting portion is made of material having higher melting point than that of said external contact portion.
Claim 2
Dependent Claim
107 words
A semiconductor device, comprising: a semiconductor chip provided at its main surface with at least one circuit element; a connecting pad formed on said main surface of said semiconductor chip; an electrode formed on said connecting pad and having an external contact portion for external electrical connection and an internal connecting portion connected with said connecting pad; and a resin layer for covering said main surface of said semiconductor chip except said external contact portion; wherein said external contact portion of said electrode is made of solder and said internal connecting portion is made of material having higher melting point than that of said external contact portion.
Claim 3
Dependent Claim
28 words
The semiconductor device according to claim 1, wherein a base metal layer functioning as a barrier layer is formed between said connecting pad and said internal connecting portion.
Claim 4
Dependent Claim
25 words
The semiconductor device according to claim 2, wherein a conductor electrically connecting said base metal layer and said internal connecting portion is formed between them.
Claim 5
Dependent Claim
19 words
The semiconductor device according to claim 3, wherein said internal connecting portion has its bottom buried in said conductor.
Claim 6
Dependent Claim
18 words
The semiconductor device according to claim 3, wherein said conductor has a tapered shape converging toward its top.
Claim 7
Dependent Claim
25 words
The semiconductor device according to claim 3, wherein a melting point of said conductor is higher than a melting point of said external contact portion.
Claim 8
Dependent Claim
21 words
The semiconductor device according to claim 3, wherein said conductor and said external contact portion are made of the same materials.
Claim 9
Dependent Claim
20 words
The semiconductor device according to claim 2, wherein said internal connecting portion has a tapered shape converging toward its bottom.
Claim 10
Dependent Claim
37 words
The semiconductor device according to claim 1, wherein a plurality of said external contact portions are provided exposing on a main surface of said resin layer, and said external contact portions are arranged in a matrix form.
Claim 11
Dependent Claim
44 words
The semiconductor device according to claim 1, wherein a plurality of said external contact portions are provided exposing on a main surface of said resin layer, and said external contact portions are disposed along a periphery of said main surface of said resin layer.
Claim 12
Dependent Claim
37 words
The semiconductor device according to claim 1, wherein a plurality of said external contact portions are provided exposing on a main surface of said resin layer, and said external contact portions are disposed approximately along concentric circles.
Claim 13
Dependent Claim
43 words
The semiconductor device according to claim 1, wherein said resin layer has a main surface at which said external contact portion is formed and a side surface defining a periphery of said main surface, and said side surface of resin layer is tapered.
Claim 14
Dependent Claim
120 words
A semiconductor device, comprising: a semiconductor chip provided at its main surface with a least one circuit element; a connecting pad formed on said main surface of said semiconductor chip; a conductive member electrically connected to said connecting pad, said conductive member forming an electrode pad at one portion, an electrode formed on said electrode pad and having an external contact portion for external electrical connection and an internal connecting portion connected with said electrode pad; and a resin layer for covering said main surface of said semiconductor chip except a portion of said external contact portion, wherein said external contact portion is made of solder, and said electrode pad is disposed on a deviated portion from said connecting pad.
Claim 15
Dependent Claim
120 words
A semiconductor device, comprising: a semiconductor chip provided at its main surface with a least one circuit element; a connecting pad formed on said main surface of said semiconductor chip; a conductive member electrically connected to said connecting pad, said conductive member forming an electrode pad at one portion, an electrode formed on said electrode pad and having an external contact portion for external electrical connection and an internal connecting portion connected with said electrode pad; and a resin layer for covering said main surface of said semiconductor chip except a portion of said external contact portion, wherein said external contact portion is made of solder, and said electrode pad is disposed on a deviated portion from said connecting pad.
Claim 16
Dependent Claim
16 words
The semiconductor device according to claim 13, wherein said conductive member functions as a barrier layer.
Claim 17
Dependent Claim
24 words
The semiconductor device according to claim 14, wherein a conductor electrically connecting said conductive member and said internal connecting portion is formed between them.
Claim 18
Dependent Claim
19 words
The semiconductor device according to claim 15, wherein said internal connecting portion has its bottom buried in said conductor.
Claim 19
Dependent Claim
18 words
The semiconductor device according to claim 15, wherein said conductor has a tapered shape converging toward its top.
Claim 20
Dependent Claim
25 words
The semiconductor device according to claim 15, wherein a melting point of said conductor is higher than a melting point of said external contact portion.
Claim 21
Dependent Claim
21 words
The semiconductor device according to claim 15, wherein said conductor and said external contact portion are made of the same materials.
Claim 22
Dependent Claim
20 words
The semiconductor device according to claim 13, wherein said internal connecting portion has a tapered shape converging toward its bottom.
Claim 23
Dependent Claim
25 words
The semiconductor device according to claim 13, wherein a melting point of said internal connecting portion is higher than that of said external contact portion.
Claim 24
Dependent Claim
37 words
The semiconductor device according to claim 13, wherein a plurality of said external contact portions are provided exposing on a main surface of said resin layer, and said external contact portions are arranged in a matrix form.
Claim 25
Dependent Claim
44 words
The semiconductor device according to claim 13, wherein a plurality of said external contact portions are provided exposing on a main surface of said resin layer, and said external contact portions are disposed along a periphery of said main surface of said resin layer.
Claim 26
Dependent Claim
37 words
The semiconductor device according to claim 13, wherein a plurality of said external contact portions are provided exposing on a main surface of said resin layer, and said external contact portions are disposed approximately along concentric circles.
Claim 27
Dependent Claim
43 words
The semiconductor device according to claim 13, wherein said resin layer has a main surface at which said external contact portion is formed and a side surface defining a periphery of said main surface, and said side surface of resin layer is tapered.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-05-18 | 2001-11-17 | 2002-05-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-05-18 | 2005-11-17 | 2006-05-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-05-18 | 2009-11-17 | 2010-05-19 | $7700.00 | Window Closed / Lapsed |