Patent US5750438A successfully refreshed from Google Patents.
US5750438A
Expired / Lapsed
US
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Method for fabricating a local interconnection structure
Assignee: United Microelectronics Corp
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Filing: 1996-06-04
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Granted: 1998-05-12
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Expires: 2016-06-04
Abstract
Abstract A local interconnection structure is disclosed. The local interconnection structure is formed on a silicon substrate in which a polysilicon gate and a number of diffusion regions exist. The structure includes a number of metal silicide layers over the substrate, a metal nitride layer over the silicide layers, and a dielectric layer over the nitride layer. The metal nitride layer which electrically connects the diffusion regions and the gate forms the interconnection. The method for fabricating the interconnection structure includes the steps of preparing the silicon substrate, sputtering a metal layer, annealing to form silicide and the nitride layers, depositing the dielectric layer, and patterning the nitride layer and the metal nitride by covering with a mask, etching away portions of both the dielectric layer and metal nitride layer not covered by the mask, and removing the mask after etching.
Inventors
- 👤 Chen-Chiu Hsue
- 👤 Sun-Chieh Chien
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 21:45
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/066
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
132 words
A method for fabricating a local interconnection structure on a silicon substrate which has a plurality of diffusion regions and a polysilicon gate, said method comprising: forming a metal layer over said silicon substrate; heating said metal layer and said silicon substrate in a nitrogen-containing atmosphere to form silicide layers over said polysilicon gates and said diffusion regions and to form a metal nitride layer over said silicon substrate; forming a dielectric layer over said metal nitride layer; and patterning said dielectric layer and said metal nitride layer to form said local interconnection structure by covering with a mask said local interconnection structure to be formed and etching away portions of both said dielectric layer and said metal nitride layer not covered by said mask and removing said mask after said etching.
Claim 2
Independent Claim
132 words
A method for fabricating a local interconnection structure on a silicon substrate which has a plurality of diffusion regions and a polysilicon gate, said method comprising: forming a metal layer over said silicon substrate; heating said metal layer and said silicon substrate in a nitrogen-containing atmosphere to form silicide layers over said polysilicon gates and said diffusion regions and to form a metal nitride layer over said silicon substrate; forming a dielectric layer over said metal nitride layer; and patterning said dielectric layer and said metal nitride layer to form said local interconnection structure by covering with a mask said local interconnection structure to be formed and etching away portions of both said dielectric layer and said metal nitride layer not covered by said mask and removing said mask after said etching.
Claim 3
Dependent Claim
18 words
The method as claimed in claim 1, wherein said metal layer is formed by sputtering a titanium layer.
Claim 4
Dependent Claim
18 words
The method as claimed in claim 1, wherein said metal layer is heated by a rapid thermal process.
Claim 5
Dependent Claim
19 words
The method as claimed in claim 1, wherein said dielectric layer is formed by depositing a silicon dioxide layer.
Claim 6
Dependent Claim
19 words
The method as claimed in claim 1, wherein said dielectric layer is formed by depositing a silicon nitride layer.
Claim 7
Dependent Claim
29 words
The method as claimed in claim 1 further comprising: forming a polysilicon layer over said substrate to define a contact window region before the formation of said metal layer.
Claim 8
Dependent Claim
56 words
The method as claimed in claim 6 further comprising: forming a passivation layer over said local interconnection structure; forming a contact window over said contact window region through said passivation layer and said dielectric layer; and forming a metal line over said passivation layer which extends through said contact window to contact said metal nitride layer.
Claim 9
Dependent Claim
18 words
The method as claimed in claim 1 wherein said step of patterning is performed by reactive ion etching.
Claim 10
Dependent Claim
12 words
The method as claimed in claim 1 wherein said mask comprises photoresist.
References Cited (Backward Citations)
US4657628A
Cited
US4994402A
Cited
US4793896A
Cited
US4793896C1
Cited
US5216281A
Cited
US5420071A
Cited
US5510292A
Cited
US5508212A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-05-11 | 2001-11-10 | 2002-05-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-05-11 | 2005-11-10 | 2006-05-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-05-11 | 2009-11-10 | 2010-05-12 | $7700.00 | Window Closed / Lapsed |