US5216281A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Self sealed aligned contact incorporating a dopant source
Assignee: UMC Japan Co Ltd
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Filing: 1991-08-26
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Granted: 1993-06-01
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Expires: 2011-08-26
Abstract
Abstract In a contact structure to a source/drain region (28) nearby a gate electrode (22), a contact sidewall through a thick dielectric is laterally displaced away from the S/D region to widen the contact; the contact sidewall is located over the gate electrode A remnant (60a) of a doped silicon layer overlies the S/D and rises up along the sidewall of gate electrode insulation and onto insulation atop the gate electrode, and is insulated from the gate electrode thereby. The doped silicon acting as a dopant for the source/drain region. A nitride, preferably Si 3 N 4 , is located under the thick dielectric and over part of the gate electrode insulation. The Si 3 N 4 adjoins the doped silicon to enclose the top and sides of the gate electrode with nitride. The bottom of the contact is formed by the doped silicon at some locations and by the nitride at other locations. The contact sidewall through the thick dielectric preferably overlies the Si 3 N 4 but not the doped silicon. The doped silicon is effective as a dry etch stop and a wet etch stop, and the silicon nitride is effective as an isotropic etch stop. The doped silicon is wholly contained within the contact, and the nitride extends beyond said contact.
Inventors
- 👤 Douglas Butler
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 20:11
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/069; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10W20/071; H10W20/081; H10W20/082; H10W20/40
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
206 words
In an integrated circuit transistor having an electrode to which electrical contact is made and a structure, near said electrode, which is to remain electrically isolated, a contact structure comprising: a layer of a doped silicon covering at least part of said electrode at the bottom of the contact and acting as a dopant source for said electrode; a layer of a first dielectric located partially outside the contact and partially within the contact, said first dielectric joining said doped silicon within said contact so that the combination of said doped silicon with said first dielectric forms a floor of the contact and seals said structure thereunder; said integrated circuit including a second, relatively thick dielectric located over said first dielectric, said second dielectric having a sidewall located outside said doped silicon and above said structure which is to remain electrically isolated, whereby a conductive material can be located within the contact to become coupled electrically to the electrode to which contact is to be made, without becoming electrically shorted to said structure which is to remain electrically isolated, even through said conductive material extends outside the electrode to which contact is to be made and extends over the structure which is to remain electrically isolated.
Claim 2
Dependent Claim
206 words
In an integrated circuit transistor having an electrode to which electrical contact is made and a structure, near said electrode, which is to remain electrically isolated, a contact structure comprising: a layer of a doped silicon covering at least part of said electrode at the bottom of the contact and acting as a dopant source for said electrode; a layer of a first dielectric located partially outside the contact and partially within the contact, said first dielectric joining said doped silicon within said contact so that the combination of said doped silicon with said first dielectric forms a floor of the contact and seals said structure thereunder; said integrated circuit including a second, relatively thick dielectric located over said first dielectric, said second dielectric having a sidewall located outside said doped silicon and above said structure which is to remain electrically isolated, whereby a conductive material can be located within the contact to become coupled electrically to the electrode to which contact is to be made, without becoming electrically shorted to said structure which is to remain electrically isolated, even through said conductive material extends outside the electrode to which contact is to be made and extends over the structure which is to remain electrically isolated.
Claim 3
Dependent Claim
40 words
The structure of claim 1 wherein said nearby structure is surrounded by a third dielectric, and wherein said first dielectric is located between said second dielectric and said third dielectric, and wherein said sidewall is located above said nearby structure.
Claim 4
Dependent Claim
59 words
The structure of claim 3 wherein said nearby structure comprises a gate electrode of a field effect transistor, and said electrode to which contact is made comprises a source of drain region of said field effect transistor, said gate electrode being covered with said third dielectric, said third dielectric being sealed by said first dielectric and said doped silicon.
Claim 5
Dependent Claim
18 words
The structure of claim 3 wherein said third dielectric comprises oxide and said first dielectric comprises silicon nitride.
Claim 6
Dependent Claim
19 words
The structure of claim 4 wherein said second dielectric comprises oxide, and wherein said first dielectric comprises silicon nitride.
Claim 7
Dependent Claim
33 words
The structure of claim 1 wherein said doped silicon is effective as a dry etch stop and a wet etch stop, and wherein said first dielectric is effective as an isotropic etch stop.
Claim 8
Dependent Claim
134 words
In an integrated circuit transistor having a first electrode to which electrical contact is made and a second electrode, near said first electrode, which is to remain electrically isolated, a contact structure comprising: insulation surrounding said second electrode; a thick dielectric defining at least one sidewall of the contact; a doped silicon at the bottom of the contact; a nitride located over at least part of the second electrode, the nitride also extending into the bottom of the contact and adjoining the doped silicon, the bottom of the contact being formed by the doped silicon together with the nitride; said one thick dielectric sidewall overlying the nitride and the second electrode but not overlying the doped silicon; the doped silicon and nitride together covering said second electrode and said insulation surrounding the second electrode.
Claim 9
Dependent Claim
134 words
In an integrated circuit transistor having a first electrode to which electrical contact is made and a second electrode, near said first electrode, which is to remain electrically isolated, a contact structure comprising: insulation surrounding said second electrode; a thick dielectric defining at least one sidewall of the contact; a doped silicon at the bottom of the contact; a nitride located over at least part of the second electrode, the nitride also extending into the bottom of the contact and adjoining the doped silicon, the bottom of the contact being formed by the doped silicon together with the nitride; said one thick dielectric sidewall overlying the nitride and the second electrode but not overlying the doped silicon; the doped silicon and nitride together covering said second electrode and said insulation surrounding the second electrode.
Claim 10
Dependent Claim
52 words
The structure of claim 7 wherein said second electrode comprises a gate electrode of a field effect transistor, and said first electrode comprises a source or drain region of said field effect transistor, said gate electrode being covered with said insulation, said insulation being sealed by said nitride and said doped silicon.
Claim 11
Dependent Claim
16 words
The structure of claim 8 wherein said insulation comprises oxide and said nitride comprises silicon nitride.
Claim 12
Dependent Claim
11 words
The structure of claim 7 wherein said nitride comprises silicon nitride.
Claim 13
Dependent Claim
32 words
The structure of claim 7 wherein said doped silicon is effective as a dry etch stop and a wet etch stop, and wherein said nitride is effective as an isotropic etch stop.
Claim 14
Dependent Claim
15 words
The structure of claim 7 wherein said doped silicon is wholly contained within the contact.
Claim 15
Dependent Claim
12 words
The structure of claim 12 wherein said nitride extends beyond said contact.
Claim 16
Dependent Claim
161 words
In an integrated circuit transistor having an electrode to which electrical contact is made and a structure, near said electrode, which is to remain electrically isolated, a contact structure comprising: a layer of a doped silicon covering at least part of said electrode at the bottom of the contact and acting as a dopant source for said electrode; said integrated circuit including a relatively thick dielectric located partially outside the contact and partially within the contact, said thick dielectric having a sidewall located inside said doped silicon and above said structure which is to remain electrically isolated, whereby a conductive material can be located within the contact to become coupled electrically to the electrode to which contact is to be made, without becoming electrically shorted to said structure which is to remain electrically isolated even though said conductive material extends outside the electrode to which contact is to be made and extends over the structure which is to remain electrically isolated.
Claim 17
Dependent Claim
161 words
In an integrated circuit transistor having an electrode to which electrical contact is made and a structure, near said electrode, which is to remain electrically isolated, a contact structure comprising: a layer of a doped silicon covering at least part of said electrode at the bottom of the contact and acting as a dopant source for said electrode; said integrated circuit including a relatively thick dielectric located partially outside the contact and partially within the contact, said thick dielectric having a sidewall located inside said doped silicon and above said structure which is to remain electrically isolated, whereby a conductive material can be located within the contact to become coupled electrically to the electrode to which contact is to be made, without becoming electrically shorted to said structure which is to remain electrically isolated even though said conductive material extends outside the electrode to which contact is to be made and extends over the structure which is to remain electrically isolated.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-05-31 | 1996-11-30 | 1997-06-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-05-31 | 2000-11-30 | 2001-06-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-05-31 | 2004-11-30 | 2005-06-01 | $7700.00 | Window Closed / Lapsed |