Patent US5747859A successfully refreshed from Google Patents.
US5747859A
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US
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Magnetic device and magnetic sensor using the same
Assignee: Toshiba Corp
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Filing: 1996-08-19
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Granted: 1998-05-05
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Expires: 2016-08-19
Abstract
Abstract A magnetic sensor has a three-terminal magnetic device consisting of an emitter, a base, and a collector. A semiconductor layer serving as the collector and a magnetic multilayered film serving as the base form a Schottky junction. The magnetic multilayered film has two magnetic films opposing each other with a nonmagnetic film between them. The emitter constructed of a metal film and the base are connected via a tunnel insulating film. The relationship between the magnetization directions in the magnetic films changes in accordance with an external magnetic field, and this changes the value of a current flowing through the magnetic device. The external magnetic field is sensed on the basis of this change in the current value.
Inventors
- 👤 Koichi Mizushima
- 👤 Teruyuki Kinno
- 👤 Takashi Yamauchi
- 👤 Koichiro Inomata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 18:56
CPC Classifications
B; B82; B82Y; B82Y25/00; B82Y10/00; G; G01; G01R; G01R33/00; G01R33/02; G01R33/06; G11; G11B; G11B5/00; G11B5/127; G11B5/33; G11B5/39; G11B5/3903; G11B5/3906; G11B5/3909; G11B5/3993; G11C; G11C11/00; G11C11/02; G11C11/16; G11C11/161; G11C11/165; G11C11/1659; G11C11/1675; H; H10; H10D; H10D48/00; H10D48/385; H10N; H10N50/00; H10N50/10; G11B5/332
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
54 words
A magnetic device comprising: a multilayered film having a first magnetic film and a nonmagnetic film; an electron collecting section including a semiconductor layer connected to said first magnetic film via a Schottky junction; and an electron injecting section including a second magnetic film connected to said nonmagnetic film via a tunnel junction member.
Claim 2
Dependent Claim
54 words
A magnetic device comprising: a multilayered film having a first magnetic film and a nonmagnetic film; an electron collecting section including a semiconductor layer connected to said first magnetic film via a Schottky junction; and an electron injecting section including a second magnetic film connected to said nonmagnetic film via a tunnel junction member.
Claim 3
Dependent Claim
22 words
A device according to claim 1, wherein said first and second magnetic films are so set as to have different coercive forces.
Claim 4
Dependent Claim
35 words
A device according to claim 1, wherein said tunnel junction member comprises a resonant tunnel structure including first and second barrier layers and a quantum well layer interposed between said first and second barrier layers.
Claim 5
Dependent Claim
128 words
A magnetic material sensor comprising: a multilayered film including a first magnetic film and a nonmagnetic film; an electron collecting section including a semiconductor layer connected to said first magnetic film via a Schottky junction; an electron injecting section including a second magnetic film connected to said nonmagnetic film via a tunnel junction member; a power supply for applying a voltage to said electron injecting section; and means for detecting a current flowing out from said electron collecting section, wherein when a relationship between magnetization directions in said first and second magnetic material films is changed by an external magnetic field, the current flowing out from said electron collecting section changes accordingly, and the external magnetic field is sensed on the basis of the change in the current.
Claim 6
Dependent Claim
128 words
A magnetic material sensor comprising: a multilayered film including a first magnetic film and a nonmagnetic film; an electron collecting section including a semiconductor layer connected to said first magnetic film via a Schottky junction; an electron injecting section including a second magnetic film connected to said nonmagnetic film via a tunnel junction member; a power supply for applying a voltage to said electron injecting section; and means for detecting a current flowing out from said electron collecting section, wherein when a relationship between magnetization directions in said first and second magnetic material films is changed by an external magnetic field, the current flowing out from said electron collecting section changes accordingly, and the external magnetic field is sensed on the basis of the change in the current.
Claim 7
Dependent Claim
22 words
A sensor according to claim 4, wherein said first and second magnetic films are so set as to have different coercive forces.
Claim 8
Dependent Claim
35 words
A sensor according to claim 4, wherein said tunnel junction member comprises a resonant tunnel structure including first and second barrier layers and a quantum well layer interposed between said first and second barrier layers.
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 2001-05-04 | 2001-11-03 | 2002-05-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-05-04 | 2005-11-03 | 2006-05-05 | $3760.00 | Window Closed / Lapsed |
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