US4823177A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method and device for magnetizing thin films by the use of injected spin polarized current
Assignee: United States Department of the Navy
•
Filing: 1988-06-30
•
Granted: 1989-04-18
•
Expires: 2008-06-30
Abstract
Abstract A device and method for magnetizing a material having a magnetic constituent. In a preferred embodiment, a ferromagnetic film and a first film are selectively deposited at first and second locations on the material. The ferromagnetic film is magnetized in a first direction. A voltage source is coupled between the ferromagnetic and first films to enable a spin-polarized current to flow through the material to magnetize the material.
Inventors
- 👤 Gary A. Prinz
- 👤 James J. Krebs
- 👤 Berend T. Jonker
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 09:15
CPC Classifications
H; H10; H10N; H10N50/00; H10N50/80; H10N50/85; H01; H01F; H01F1/00; H01F1/01; H01F1/40; H01F1/401; H01F10/00; H01F10/08; H01F10/10; H01F10/18; H01F10/193; H01F10/1936
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
67 words
A device comprising: a material having a magnetic constituent; a ferromagnetic film disposed at a first location on said material, said ferromagnetic film being magnetized in a first direction; a conductive first film disposed at a second location on said material; and means for accepting a voltage between said ferromagnetic and first films to enable a spin-polarized current to flow through said material to magnetize said material.
Claim 2
Independent Claim
67 words
A device comprising: a material having a magnetic constituent; a ferromagnetic film disposed at a first location on said material, said ferromagnetic film being magnetized in a first direction; a conductive first film disposed at a second location on said material; and means for accepting a voltage between said ferromagnetic and first films to enable a spin-polarized current to flow through said material to magnetize said material.
Claim 3
Dependent Claim
19 words
The device of claim 1 wherein: said first film comprises a second ferromagnetic film magnetized in a second direction.
Claim 4
Dependent Claim
16 words
The device of claim 2 wherein: said material is comprised of a dilute magnetic semiconductor material.
Claim 5
Dependent Claim
11 words
The device of claim 2 wherein: said material includes magnetic impurities.
Claim 6
Dependent Claim
29 words
The device of claim 4 wherein: said material is selected from the group consisting of iron, cobalt, nickel, ruthenium, rhodium, palladium, osmium, iridium and platinum and any alloy therof.
Claim 7
Dependent Claim
15 words
The device of claim 1 wherein: said first film is comprised of a non-magnetic metal.
Claim 8
Dependent Claim
26 words
The device of claim 6 wherein: said first film is selected from the group consisting of gold, silver, aluminum, copper and indium and any alloy thereof.
Claim 9
Dependent Claim
16 words
The device of claim 6 wherein: said material is comprised of a dilute magnetic semiconductor material.
Claim 10
Dependent Claim
11 words
The device of claim 6 wherein: said material includes magnetic impurities.
Claim 11
Dependent Claim
29 words
The device of claim 9 wherein: said material is selected from the group consisting of iron, cobalt, nickel, ruthenium, rhodium, palladium, osmium, iridium and platinum and any alloy thereof.
Claim 12
Dependent Claim
24 words
The device of claim 1 further including: a substrate, and wherein said material is in the form of a film deposited upon said substrate.
Claim 13
Dependent Claim
12 words
The device of claim 11 wherein; said substrate is a semiconductor substrate.
Claim 14
Dependent Claim
19 words
The device of claim 12 wherein: said first film comprises a second ferromagnetic film magnetized in a second direction.
Claim 15
Dependent Claim
16 words
The device of claim 13 wherein: said material is comprised of a dilute magnetic semiconductor material.
Claim 16
Dependent Claim
11 words
The device of claim 13 wherein: said material includes magnetic impurities.
Claim 17
Dependent Claim
29 words
The device of claim 15 wherein: said material is selected from the group consisting of iron, cobalt, nickel, ruthenium, rhodium, palladium, osmium, iridium and platinum and any alloy therof.
Claim 18
Dependent Claim
15 words
The device of claim 12 wherein: said first film is comprised of a non-magnetic metal.
Claim 19
Dependent Claim
26 words
The device of claim 17 wherein: said first film is selected from the group consisting of gold, silver, aluminum, copper and indium and any alloy therof.
Claim 20
Dependent Claim
16 words
The device of claim 17 wherein: said material is comprised of a dilute magnetic semiconductor material.
Claim 21
Dependent Claim
11 words
The device of claim 17 wherein: said material includes magnetic impurities.
Claim 22
Dependent Claim
29 words
The device of claim 20 wherein: said material is selected from the group consisting of iron, cobalt, nickel, ruthenium, rhodium, palladium, osmium, iridium and platinum and any alloy thereof.
Claim 23
Independent Claim
71 words
A method for magnetizing a material having a magnetic constituent, said method comprising the steps of: depositing a ferromagnetic film at a first location on the material; depositing a conductive first film at a second location on the material; magnetizing the ferromagnetic film in a first direction; and applying a voltage across the ferromagnetic and first films to enable a spin-polarized current to flow through the material to magnetize the material.
Claim 24
Independent Claim
71 words
A method for magnetizing a material having a magnetic constituent, said method comprising the steps of: depositing a ferromagnetic film at a first location on the material; depositing a conductive first film at a second location on the material; magnetizing the ferromagnetic film in a first direction; and applying a voltage across the ferromagnetic and first films to enable a spin-polarized current to flow through the material to magnetize the material.
Claim 25
Dependent Claim
30 words
The method of claim 22 including before the depositing a ferromagnetic film step the further step of: depositing the material in the form of a film on a preselected substrate.
Claim 26
Dependent Claim
45 words
The method of claim 22 wherein said depositing a conductive first film step includes the steps of: selecting a first film comprised of a ferromagnetic material; depositing the ferromagnetic first film at the second location; and magnetizing the ferromagnetic first film in a second direction.
Claim 27
Independent Claim
82 words
A method for magnetizing a dilute magnetic semiconductor material, said method comprising the steps of: depositing a ferromagnetic film at a first location of the dilute magnetic semiconductor material; depositing a metallic first film at a second location of the dilute magnetic semiconductor material; magnetizing the ferromagnetic film in a first direction; and applying a voltage across the ferromagnetic and first films to enable a spin-polarized current to flow through the dilute magnetic semiconductor material to magnetize the dilute magnetic semiconductor material.
Claim 28
Independent Claim
82 words
A method for magnetizing a dilute magnetic semiconductor material, said method comprising the steps of: depositing a ferromagnetic film at a first location of the dilute magnetic semiconductor material; depositing a metallic first film at a second location of the dilute magnetic semiconductor material; magnetizing the ferromagnetic film in a first direction; and applying a voltage across the ferromagnetic and first films to enable a spin-polarized current to flow through the dilute magnetic semiconductor material to magnetize the dilute magnetic semiconductor material.
Claim 29
Dependent Claim
37 words
The method of claim 25 wherein said depositing a metallic first film step includes the steps of: depositing a first film of ferromagnetic material at the second location; and magnetizing the first film in a second direction.
Claim 30
Dependent Claim
37 words
The method of claim 25 wherein said depositing a metallic first film step includes the step of: selecting a non-ferromagnetic material as the first film; and depositing a first film of non-ferromagnetic material at the second location.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-04-17 | 1992-10-17 | 1993-04-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-04-17 | 1996-10-17 | 1997-04-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-04-17 | 2000-10-17 | 2001-04-18 | $7700.00 | Window Closed / Lapsed |