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US5742307A
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Method for electrical tailoring drop ejector thresholds of thermal ink jet heater elements
Assignee: Xerox Corp
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Filing: 1997-01-21
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Granted: 1998-04-21
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Expires: 2017-01-21
Abstract
Abstract A method for electrical tailoring of thermal ink jet heater elements. The resistance of ink-jet heater elements formed of polysilicon is changed by applying energy through the resistor element of varying amounts at varying pulse widths. The application of pulsed current for up to 1 second total pulse width at voltages of up to 50 volts decreases the resistance by as much as thirty percent or more of the as fabricated values.
Inventors
- 👤 Thomas E. Watrobski
- 👤 William G. Hawkins
- 👤 Sophie V. Vandebroek
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 18:25
CPC Classifications
B; B41; B41J; B41J2/00; B41J2/005; B41J2/01; B41J2/015; B41J2/04; B41J2/045; B41J2/04501; B41J2/04565; B41J2/0458; B41J2/0459; B41J2/04591; B41J2/04593; B41J2/135; B41J2/14; B41J2/14016; B41J2/14072; B41J2/14088; B41J2/14112; B41J2/14129; B41J2/16; B41J2/1601; B41J2/1621; B41J2/1631; B41J2/1635; B41J2/164; B41J2/1642; B41J2/1646; B41J2202/00; B41J2202/01; B41J2202/03; B41J2202/13; B41J2202/20
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
122 words
A thermal ink jet drop ejector, for ejecting an ink drop, generating thermal energy in response to an operating condition pulse, having a operating condition pulsewidth, being applied thereto during normal operation of the drop ejector, comprising: a silicon substrate; a field oxide layer, deposited on said silicon substrate; a polysilicon resistor, formed on said field oxide layer, said polysilicon resistor including a doped polysilicon material having a resistance value, the resistance value determined by adjustment with the application of a current pulse, generated by a signal generator, applied thereto, the current pulse, including a pulsewidth being equal to or greater than the operating condition pulsewidth, being applied repeatedly to said polysilicon resistor; and an insulator layer deposited on said polysilicon resistor.
Claim 2
Dependent Claim
122 words
A thermal ink jet drop ejector, for ejecting an ink drop, generating thermal energy in response to an operating condition pulse, having a operating condition pulsewidth, being applied thereto during normal operation of the drop ejector, comprising: a silicon substrate; a field oxide layer, deposited on said silicon substrate; a polysilicon resistor, formed on said field oxide layer, said polysilicon resistor including a doped polysilicon material having a resistance value, the resistance value determined by adjustment with the application of a current pulse, generated by a signal generator, applied thereto, the current pulse, including a pulsewidth being equal to or greater than the operating condition pulsewidth, being applied repeatedly to said polysilicon resistor; and an insulator layer deposited on said polysilicon resistor.
Claim 3
Dependent Claim
45 words
The thermal ink jet drop ejector of claim 1, wherein said polysilicon resistor includes a polysilicon material having a resistance value being determined by adjustment with the creation of a temperature above approximately 400° C. therein with the current pulse generated by the signal generator.
Claim 4
Dependent Claim
33 words
The thermal ink jet drop ejector of claim 2, wherein said insulator layer comprises a silicon nitride layer deposited on said polysilicon resistor and a cavitation layer formed on said silicon nitride layer.
Claim 5
Dependent Claim
20 words
The thermal ink jet drop ejector of claim 3, wherein said silicon nitride layer comprises a pyrolitically deposited silicon nitride.
Claim 6
Dependent Claim
15 words
The thermal ink jet drop ejector of claim 4, wherein said cavitation layer comprises tantalum.
Claim 7
Dependent Claim
43 words
The thermal ink jet drop ejector of claim 1, wherein said polysilicon resistor comprises a doped polysilicon material having the resistance determined by the current pulse being applied repeatedly to said polysilicon resistor for a total time period of one second or less.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-04-20 | 2001-10-20 | 2002-04-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-04-20 | 2005-10-20 | 2006-04-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-04-20 | 2009-10-20 | 2010-04-21 | $7700.00 | Window Closed / Lapsed |